TPCP8203 [TOSHIBA]
TRANSISTOR 4700 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 2-3V1G, 8 PIN, FET General Purpose Small Signal;
| 型号： | TPCP8203 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 4700 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 2-3V1G, 8 PIN, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPCP8203
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
TPCP8203
Portable Equipment Applications
Motor Drive Applications
DC/DC Converters
Unit: mm
0.33±0.05
A
M
0.05
5
8
•
•
•
•
•
•
Lead (Pb)-free
Small footprint due to small and thin package
Low drain-source ON-resistance: RDS(ON) = 31 mΩ (typ.)
High forward transfer admittance: |Yfs| = 8.6 S (typ.)
Low leakage current: IDSS = 10 μA (max)(VDS = 40 V)
Enhancement model: Vth = 1.3 to 2.5V
0.475
1
4
B
B
M
0.05
0.65
2.9±0.1
A
0.8±0.05
S
0.17±0.02
(VDS = 10 V, ID = 1 mA)
0.025
+0.1
S
0.28
-0.11
Absolute Maximum Ratings (Ta = 25°C)
+0.13
-0.12
1.12
1.12
+0.13
-0.12
Characteristic
Drain-source voltage
Symbol
Rating
Unit
+0.1
V
40
40
V
V
V
0.28
DSS
1．Source1
2．Gate1
5．Drain2
-0.11
6
7
Drain2
Drain1
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
DGR
GS
3．Source2
4．Gate2
V
±20
4.7
18.8
GSS
8．Drain1
DC
Pulse
(Note 1)
(Note 1)
I
D
JEDEC
JEITA
⎯
⎯
Drain current
A
I
DP
Single-device operation
(Note 3a)
P
P
P
P
1.48
1.23
0.58
0.36
D (1)
Drain power
dissipation
(t = 5 s) (Note 2a)
TOSHIBA
2-3V1G
Single-device value at
dual operation (Note 3b)
Weight: 0.017 g (typ.)
D (2)
D (1)
D (2)
W
Single-device operation
(Note 3a)
Circuit Configuration
Drain power
dissipation
(t = 5 s) (Note 2b)
Single-device value at
dual operation (Note 3b)
8
7
5
6
Single-pulse avalanche energy
Avalanche current
(Note 4)
E
10.6
4.7
mJ
A
AS
I
AR
Repetitive avalanche energy
Single-device value at dual operation
E
0.12
mJ
AR
(Note 2a, 3b, 5)
Channel temperature
T
T
150
°C
°C
ch
Storage temperature range
−55 to 150
1
2
4
stg
3
Marking (Note 6)
Note: For Notes 1 to 6, see the next page.
8
7
6
5
This transistor is an electrostatic-sensitive device. Handle with care.
8203
※
1
2
3
4
Lot No.
1
2007-02-28
TPCP8203
Thermal Characteristics
Characteristic
Symbol
Max
84.5
Unit
Single-device operation
(Note 3a)
R
R
R
R
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
Thermal resistance,
channel to ambient
°C/W
Single-device value at
(Note 2a)
(t = 5 s)
101.6
215.5
347.2
dual operation (Note 3b)
Single-device operation
(Note 3a)
Thermal resistance,
channel to ambient
°C/W
Single-device value at
(Note 2b)
(t = 5 s)
dual operation (Note 3b)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
25.4
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.).
Note 4: V
= 25 V, T = 25°C (initial), L = 0.5 mH, R = 25 Ω, I
= 4.7 A
AR
DD
ch
G
Note 5: Repetitive rating: Pulse width limited by Max. Channel temperature.
Note 6: ● on the lower left of the marking indicates Pin 1.
* Weekly code (3 digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Note 7: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
2007-02-28
TPCP8203
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
⎯
⎯
±10
10
⎯
μA
μA
GSS
GS
DS
DS
Drain cutoff current
I
= 40 V, V
= 0 V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
40
15
1.3
⎯
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
= -20 V
⎯
⎯
V
V
V
V
V
= 10 V, I = 1 mA
⎯
2.5
60
40
⎯
th
DS
GS
GS
DS
D
R
= 4.5 V, I = 2.4 A
43
31
8.6
770
70
105
DS (ON)
D
Drain-source ON-resistance
mΩ
S
R
= 10 V, I = 2.4A
⎯
DS (ON)
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 2.4A
4.3
⎯
D
C
C
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
⎯
oss
10 V
I = 2.4 A
D
Rise time
t
⎯
⎯
⎯
⎯
⎯
8
⎯
⎯
⎯
⎯
⎯
r
V
GS
Output
0 V
Turn-on time
Switching time
t
15
9
on
Fall time
t
f
∼
V
20 V
DD
<
Turn-off time
t
70
16
Duty 1%, t = 10 μs
off
w
Total gate charge
(gate-source plus gate-drain)
Q
g
∼
V
I
32 V, V
= 4.7 A
= 10 V,
GS
DD
nC
Gate-source charge1
Q
gs1
⎯
⎯
2.5
4
⎯
⎯
D
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
I
⎯
⎯
⎯
⎯
⎯
18.8
-1.2
A
V
DRP
V
I
= 4.7 A, V
= 0 V
GS
DSF
DR
3
2007-02-28
TPCP8203
I
– V
I – V
D DS
D
DS
10
8
20
16
12
8
Common source
Tc = 25°C
Single Pulse test
Common source
Tc = 25°C
Single Pulse test
10
4.5
5
10
4.5
4
8
8
3.8
6
6
4
3.6
5
6
3.8
3.6
3.4
4
3.2
3
3.4
3.2
2
4
V
= 3 V
GS
V
= 2.8 V
GS
0
0
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
Drain−source voltage
V
(V)
Drain−source voltage
V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
1.0
0.8
0.6
20
16
12
8
Common source
VDS = 10 V
Common source
Ta = 25°C
Single Pulse test
Single Pulse test
0.4
I
= 4.7A
D
Ta = −55°C
100
2.4
4
0.2
0
25
1.2
2
0
0
4
6
8
10
14
0
2
4
6
8
12
Gate−source voltage
V
(V)
Gate−source voltage
V
(V)
GS
GS
|Y | – I
fs
R
– I
DS (ON) D
D
100
10
100
Common source
VDS = 10 V
Common source
Tc = 25°C
Single Pulse test
Single Pulse test
4.5
Ta = −55°C
100
25
V
= 10 V
GS
1
0.1
0.1
10
0.1
1
10
100
1
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
4
2007-02-28
TPCP8203
R
– Ta
I
– V
DR DS
DS (ON)
100
100
10
1
Common source
Tc = 25°C
Common source
Ta = 25°C
Single Pulse test
Single Pulse test
80
60
40
10
I
= 4.7, 2.4, 1.2A
5
D
3
V
= 4.5 V
GS
V
= 0, −1 V
GS
1
I
= 4.7, 2.4, 1.2A
D
V
= 10 V
GS
20
0
0.1
−80
−40
0
40
80
120
160
0
− 0.2
− 0.4
− 0.6
− 0.8
− 1
− 1.2
Ambient temperature Ta (°C)
Drain−source voltage
V
(V)
DS
C – V
V
– Ta
th
DS
10000
1000
100
4
3
2
1
0
Common source
= 10 V
V
DS
= 1 mA
I
D
Pulse test
C
iss
C
oss
Common source
Ta = 25°C
C
rss
V
= 0 V
GS
f = 1 MHz
10
0.1
1
10
100
−80
−40
0
40
80
120
160
Drain−source voltage
V
(V)
Ambient temperature Ta (°C)
DS
Dynamic input/output
characteristics
P
– Ta
D
2.0
1.5
1.0
0.5
0
40
16
14
12
10
8
Device mounted on a glass-epoxy board (a)
(Note 2a)
Common source
I
= 4.7 A
D
(1) Single-device operation
(2) Single-device value at dual operation
(Note 3b)
(Note 3a)
Ta = 25°C
Pulse test
V
DS
(1)
(2)
Device mounted on a glass-epoxy board (b)
(Note 2b)
30
20
10
0
8V
(3) Single-device operation
(4) Single-device value at dual operation
(Note 3b)
(Note 3a)
16V
t = 5 s
V
= 32V
DD
6
V
GS
(3)
(4)
4
2
0
20
0
40
80
120
160
200
0
4
8
12
16
Total gate charge
Q
g
(nC)
Ambient temperature Ta (°C)
5
2007-02-28
TPCP8203
r
th
– t
w
1000
(4)
(3)
Single pulse
(2)
(1)
100
10
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation
(2) Single-device value at dual operation
(Note 3a)
(Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation
(4) Single-device value at dual operation
(Note 3a)
(Note 3b)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe operating area
100
I
max (pulse)*
D
1 ms*
10
10 ms*
1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
10
0.1
0.1
1
100
Drain−source voltage
V
(V)
DS
6
2007-02-28
TPCP8203
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2007-02-28
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