QPD1019S2 [TRIQUINT]

500W, 50V, 2.9 â 3.3 GHz, GaN RF IMFET;


型号：	QPD1019S2
厂家：	TRIQUINT SEMICONDUCTOR
描述：	500W, 50V, 2.9 â 3.3 GHz, GaN RF IMFET
文件：	总19页 (文件大小：2224K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Product Overview

The QPD1019 is a 500 W (P_3dB) internally matched discrete

GaN on SiC HEMT which operates from 2.9 to 3.3 GHz on

a 50V supply rail. The device is GaN IMFET fully matched

to 50 Ω in an industry standard air cavity package and is

ideally suited for military radar.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Key Features

17.40 xꢀ24.00ꢀxꢀ4.31ꢀmm

• Frequency: 2.9 to 3.3 GHz

• Output Power (P_3dB)¹: 590 W

• Linear Gain¹: 15.5 dB

• Typical PAE_3dB¹: 67%

• Operating Voltage: 50 V

• Low thermal resistance package

• Pulse capable

Functional Block Diagram

Note 1: @ 3.1 GHz

Applications

• Military radar

• Civilian radar

• Test instrumentation

Ordering info

Part No.

QPD1019

ECCN

Description

3A001.B.3.A

EAR99

Tray of 18 QPD1019

Pack of 2 QPD1019

2.9 – 3.3 GHz EVB

QPD1019S2

QPD1019EVB01

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 1 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Absolute Maximum Ratings¹

Recommended Operating Conditions¹

Parameter

Min Typ Max Units

Parameter

Rating

Units

Operating Temp. Range

Drain Voltage Range, V_D

Drain Bias Current, I_DQ

−40 +25 +85

+28 +50 +55

ꢁ°C

Breakdown Voltage,BV_DG

Gate Voltage Range, V_G

Drain Current

+150

-8 to +2

–

750

–

Drain Current, I_D

Gate Current Range, I_G

See page 4.

Gate Voltage, V_G

−2.8

–

Power Dissipation, 10% DC

100 uS PW, P_D, T = 85°C

522

Channel Temperature (T_CH)

250

°C

Power Dissipation, Pulsed

(P_D)^{2, 3}

RF Input Power, 10% DC

100 uS PW, 3.1 GHz, T =

25°C

–

469

+49

dBm

Notes:

1. Electrical performance is measured under conditions noted

in the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions.

2. Package base at 85°C

3. Pulse Width = 100 uS, Duty Cycle = 10%

4. To be adjusted to desired I_DQ

Channel Temperature, T_CH

275

320^ꢁ

°C

Mounting Temperature

(30ꢀSeconds)

Storage Temperature

Notes:

−65 to +150

1. Operation of this device outside the parameter ranges

given above may cause permanent damage.

Pulsed Characterization – Load-Pull Performance – Power Tuned¹

Parameters

Frequency, F

Linear Gain, G_LIN

Typical Values

Unit

GHz

2.9

3.1

3.3

15.5

15.8

Output Power at 3dB

57.7

57.5

dBm

compression point, P_3dB

Power-Added-Efficiency at 3dB

compression point, PAE_3dB

58.8

12.5

Gain at 3dB compression point

13.5

12.8

Notes:

1. Test conditions unless otherwise noted: V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

Pulsed Characterization – Load-Pull Performance – Efficiency Tuned¹

Parameters

Frequency, F

Linear Gain, G_LIN

Typical Values

Unit

GHz

3.1

3.3

16.1

17.5

16.7

Output Power at 3dB

56.4

55.9

66.8

14.5

56.1

dBm

compression point, P_3dB

Power-Added-Efficiency at 3dB

compression point, PAE_3dB

Gain at 3dB compression point,

G_3dB

13.1

13.7

Notes:

1. Test conditions unless otherwise noted: V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 2 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

RF Characterization – 2.9 – 3.3 GHz EVB Performance At 2.9 GHz¹

Parameter

Min

Typ

15.5

57.0

65.8

12.5

Max

Units

ꢁdB

Linear Gain, G_LIN

–

Output Power at 3dB compression point, P_3dB

Drain Efficiency at 3dB compression point, DEFF_3dB

Gain at 3dB compression point, G_3dB

Notes:

dBm

1. V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

RF Characterization – 2.9 – 3.3 GHz EVB Performance At 3.1 GHz¹

Parameter

Min

Typ

16.3

57.0

62.3

13.3

Max

Units

ꢁdB

Linear Gain, G_LIN

–

Output Power at 3dB compression point, P_3dB

Drain Efficiency at 3dB compression point, DEFF_3dB

Gain at 3dB compression point, G_3dB

Notes:

dBm

1. V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

RF Characterization – 2.9 – 3.3 GHz EVB Performance At 3.3 GHz¹

Parameter

Min

Typ

16.3

56.4

65.1

13.3

Max

Units

ꢁdB

Linear Gain, G_LIN

–

Output Power at 3dB compression point, P_3dB

Drain Efficiency at 3dB compression point, DEFF_3dB

Gain at 3dB compression point, G_3dB

Notes:

dBm

1. V_D= +50ꢁV, I_DQ= 750ꢁmA, Temp = 25°C, 100 uS PW, 10% DC

RF Characterization – Mismatch Ruggedness at 2.9, 3.1 & 3.3 GHz¹

Symbol Parameter

dB Compression

Typical

VSWR

Notes:

Impedance Mismatch Ruggedness

ꢁ10:1

1. Test conditions unless otherwise noted: T_A= 25°C, V_D= 50 V, I_DQ= 750 mA, 100 uS PW, 10% DC.

2. Driving input power is determined at pulsed compression under matched condition at EVB output connector.

3. No spur detected down to the noise floor of Spectrum Analyzer from 0.01 – 8GHz at T_A= -40°C.

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 3 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Maximum Gate Current

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 4 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Median Lifetime¹

Median Lifetime vs. Channel Temperature

1.00E+19

1.00E+18

1.00E+17

1.00E+16

1.00E+15

1.00E+14

1.00E+13

1.00E+12

1.00E+11

1.00E+10

1.00E+09

1.00E+08

1.00E+07

1.00E+06

1.00E+05

100

125

150

175

200

225

250

275

Channel Temperature, T_CH(°C)

Notes:

1- For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle.

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 5 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Thermal and Reliability Information – Pulsed

Parameter

Conditions

Values

Units

Thermal Resistance (θ_JC)

Maximum Channel Temperature (T_CH)

Median Lifetime I

Thermal Resistance (θ_JC)

Maximum Channel Temperature (T_CH)

Median Lifetime I

Thermal Resistance (θ_JC)

Maximum Channel Temperature (T_CH)

Median Lifetime I

Thermal Resistance (θ_JC)

Maximum Channel Temperature (T_CH)

Median Lifetime I

0.30

°C/W

85°C back side temperature

155

3.0E10

0.33

°C

Hrs

°C/W

°C

Hrs

°C/W

°C

Hrs

°C/W

°C

Hrs

°C/W

°C

230 W Pdiss, 100 uS PW, 10% DC

85°C back side temperature

198

346 W Pdiss, 100 uS PW, 10% DC

4.0E8

0.35

247

9.0E6

0.35

250

8.4E6

0.36

275

85°C back side temperature

461 W Pdiss, 100 uS PW, 10% DC

85°C back side temperature

469 W Pdiss, 100 uS PW, 10% DC

Thermal Resistance (θ_JC)

Maximum Channel Temperature (T_CH)

Median Lifetime I

85°C back side temperature

522 W Pdiss, 100 uS PW, 10% DC

1.5E6

Hrs

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 6 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Load-Pull Smith Charts^{1, 2, 3}

Notes:

1. V_D= 50 V, I_DQ= 750 mA, 100 uS PW, 10% DC pulsed. Performance is at 3dB gain compression referenced to peak gain.

2. See page 14 for load-pull and source-pull reference planes. 50- load-pull TRL fixtures are built with 20-mil RO4350B material.

3. NaN means the impedances are either undefined or varying in load-pull system.

2.9GHz, Load-pull

Max Power is 57.7dBm

at Z = 43.526-11.413i

•

Zs(1fo) = 50

Zs(2fo) = 49.96+24i

Zs(3fo) = 16.7+0.11i

Ω

= -0.0535-0.1286i

Max Gain is 13.6dB

Ω

•

at Z = 72.284+38.391i

= 0.2556+0.2337i

Ω

Max PAE is 66%

at Z = 38.299+18.634i

•

Ω

= -0.0842+0.2288i

12.9

13.4

12.4

64.1

11.9

62.1

60.1

58.1

57.6

57.4

57.2

Power

Gain

PAE

Zo = 50

3dB Compression Referenced to Peak Gain

Ω

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 7 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Load-Pull Smith Charts^{1, 2, 3}

Notes:

1. V_D= 50 V, I_DQ= 750 mA, 100 uS PW, 10% DC pulsed. Performance is at 3dB gain compression referenced to peak gain.

2. See page 14 for load-pull and source-pull reference planes. 50- load-pull TRL fixtures are built with 20-mil RO4350B material.

3. NaN means the impedances are either undefined or varying in load-pull system.

3.1GHz, Load-pull

Max Power is 57.7dBm

at Z = 45.594-24.684i

•

Zs(1fo) = 50.01-0.01i

Zs(2fo) = 70.27-11.24i

Ω

= 0.0193-0.2532i

Max Gain is 14.8dB

Zs(3fo) = 239.74-129.83i

Ω

•

at Z = 29.914+12.772i

= -0.2202+0.195i

Ω

Zl(3fo) = 70.51+73.61i

Ω

Max PAE is 66.8%

at Z = 25.975-0.01i

•

Ω

= -0.3162-0.0002i

14.3

66.1

60.1

58.1

13.8

56.1

57.6

13.3

57.4

57.2

12.8

Power

Gain

PAE

Zo = 50

3dB Compression Referenced to Peak Gain

Ω

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 8 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Load-Pull Smith Charts^{1, 2, 3}

Notes:

4. V_D= 50 V, I_DQ= 750 mA, 100 uS PW, 10% DC pulsed. Performance is at 3dB gain compression referenced to peak gain.

5. See page 14 for load-pull and source-pull reference planes. 50- load-pull TRL fixtures are built with 20-mil RO4350B material.

6. NaN means the impedances are either undefined or varying in load-pull system.

3.3GHz, Load-pull

Max Power is 57.5dBm

at Z = 72.195-22.276i

•

Zs(1fo) = 50.02+0.07i

Zs(2fo) = 47.87-14.87i

Ω

= 0.208-0.1444i

Max Gain is 13.8dB

Zs(3fo) = 20.98-24.59i

Ω

•

at Z = 30.218-6.755i

= -0.2378-0.1042i

Ω

Zl(3fo) = 37.52-21.65i

Ω

Max PAE is 63.1%

at Z = 36.5-18.225i

•

Ω

= -0.1069-0.2332i

53.6

55.6

57.6

61.6

57.3

57.1

56.9

13.5

Power

Gain

12.5

PAE

Zo = 50

3dB Compression Referenced to Peak Gain

Ω

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 9 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Typical Performance – Load-Pull Drive-up^{1, 2}

Notes:

1. 100 uS PW, 10% DC pulsed signal, V_D= 50 V, I_DQ= 750 mA, T_A= 25°C.

2. See page 13 for load-pull and source-pull reference planes where the performance was measured.

Gain and PAE vs. Output Power

2.9 GHz - Efficiency Tuned

Gain and PAE vs. Output Power

2.9 GHz - Power Tuned

100

Gain

PAE

Gain

PAE

Zs(1fo) = 50

Zs(2fo) = 49.96+24i

Zs(3fo) = 16.7+0.11i

Zl(1fo) = 38.3+18.63i

Zl(2fo) = 11.89+24.17i

Zl(3fo) = 13.87-4.88i

Ω

Zs(1fo) = 50

Zs(2fo) = 49.96+24i

Zs(3fo) = 16.7+0.11i

13 Zl(1fo) = 43.53-11.41i

Zl(2fo) = 10.03+17.1i

Zl(3fo) = 12.44-6.55i

Ω

45 46 47 48 49 50 51 52 53 54 55 56 57 58

Output Power [dBm]

45 46 47 48 49 50 51 52 53 54 55 56 57

Output Power [dBm]

Gain and PAE vs. Output Power

3.1 GHz - Efficiency Tuned

Gain and PAE vs. Output Power

3.1 GHz - Power Tuned

100

Gain

PAE

Gain

PAE

Zs(1fo) = 50.01-0.01iΩ

Zs(2fo) = 70.27-11.24iΩ

Zs(3fo) = 239.74-129.83iΩ

Zl(1fo) = 25.97-0.01iΩ

Zl(2fo) = 111.21+23.07iΩ

Zl(3fo) = 70.13+73.76iΩ

Zs(1fo) = 50.01-0.01iΩ

Zs(2fo) = 70.27-11.24iΩ

Zs(3fo) = 239.74-129.83iΩ

Zl(1fo) = 45.59-24.68iΩ

Zl(2fo) = 251.46-8.84iΩ

Zl(3fo) = 70.51+73.4iΩ

45 46 47 48 49 50 51 52 53 54 55 56 57 58

Output Power [dBm]

45 46 47 48 49 50 51 52 53 54 55 56 57

Output Power [dBm]

Gain and PAE vs. Output Power

3.3 GHz - Power Tuned

Gain and PAE vs. Output Power

3.3 GHz - Efficiency Tuned

100

Gain

PAE

Gain

PAE

Zs(1fo) = 50.02+0.07iΩ

Zs(2fo) = 47.87-14.87iΩ

Zs(3fo) = 20.98-24.59iΩ

Zl(1fo) = 72.19-22.28iΩ

Zl(2fo) = 47.92+3.65iΩ

Zl(3fo) = 41.58-19.18iΩ

Zs(1fo) = 50.02+0.07i

Zs(2fo) = 47.87-14.87i

Zs(3fo) = 20.98-24.59i

Ω

Zl(1fo) = 36.5-18.23i

Zl(2fo) = 30.87-20.45i

Zl(3fo) = 38.6-22.33i

Ω

45 46 47 48 49 50 51 52 53 54 55 56 57 58

Output Power [dBm]

45 46 47 48 49 50 51 52 53 54 55 56 57

Output Power [dBm]

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 10 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Power Drive-up Performance Over Temperatures Of 2.9 – 3.3 GHz EVB^{1, 2}

Notes:

1. V_D= 50 V, I_DQ= 750 mA, 100 uS PW, 10% DC.

2. Performance shown is at EVB connectors reference plane.

P3dB Over Temperatures

G3dB Over Temperatures

600

550

500

450

400

350

300

-40 °C

25 °C

85 °C

-40 °C

25°C

85°C

2.9

3.1

Frequency [GHz]

3.2

3.3

2.9

3.1

Frequency [GHz]

3.2

3.3

Pdiss3dB Over Temperatures

DEFF3dB Over Temperatures

500

450

400

350

300

250

200

150

100

-40 °C

25 °C

85 °C

-40 °C

25 °C

85 °C

2.9

3.1

Frequency [GHz]

3.2

3.3

2.9

3.1

Frequency [GHz]

3.2

3.3

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 11 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Power Drive-up Performance At 25°C Of 2.9 – 3.3 GHz EVB^{1, 2}

Notes:

1. V_D= 50 V, I_DQ= 750 mA, 100 uS PW, 10% DC, T_A= 25°C.

2. Performance shown is at EVB connectors reference plane.

P3dB At 25 °C

G3dB At 25 °C

600

550

500

450

400

350

300

2.9

3.1

Frequency [GHz]

3.2

3.3

2.9

3.1

Frequency [GHz]

3.2

3.3

DEFF3dB At 25 °C

Pdiss3dB At 25 °C

500

450

400

350

300

250

200

150

100

2.9

3.1

Frequency [GHz]

3.2

3.3

2.9

3.1

Frequency [GHz]

3.2

3.3

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 12 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

S-Parameters At -40°C Of 2.9 – 3.3 GHz EVB^{1, 2}

Notes:

1. V_D= 50 V, I_DQ= 750 mA, 100 uS PW, 10% DC, T_A= -40°C.

2. Performance shown is at EVB connectors reference plane.

S21

S11

-5

-10

-15

-20

-25

-20

-40

-60

-80

Frequency [GHz]

S22

K-Factor

-10

-20

-30

-40

-50

4.5

3.5

2.5

1.5

0.5

Frequency [GHz]

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 13 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Pin Configuration and Description

Load-pull Reference

Planes

Pin Description

Symbol

V_G/ RF IN

V_D/ RF OUT

GND

Description

Gate voltage / RF Input

Drain voltage / RF Output

Package base / Ground

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 14 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Package Marking and Dimensions^{1, 2}

Notes:

1. All dimensions are in mm. otherwise noted, the tolerance is 0.15 mm.

2. The QPD1019 will be marked with the “QPD1019” designator and a lot code marked below the part designator. The “YY”

represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start,

the “MXXX” is the production lot number.

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 15 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Schematic – 2.9 – 3.3 GHz EVB

Bias-up Procedure

1. Set V_Gto -6 V.

Bias-down Procedure

1. Turn off RF signal.

2. Set I_Dcurrent limit to 1000 mA.

3. Apply 50 V V_D.

2. Turn off V_D

3. Wait 2 seconds to allow drain capacitor to discharge

4. Turn off V_G

4. Slowly adjust V_Guntil I_Dis set to 750 mA.

5. Set I_Dcurrent limit to 2 A

6. Apply RF.

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 16 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

PCB Assembly – 2.9ꢀ–ꢀ3.3 GHz EVB

Notes:

1. PCB Material: RO4350B, 20 mil thickness, 1 oz copper cladding

Bill Of material – 2.9 – 3.3 GHz EVB

Ref Des

Value

680 uF

10 pF

Qty

Manufacturer

Panasonic

ATC

Part Number

EEU-FC2A681

C4, C19

ATC600S100JW250XT

ATC600S150FT250XT

ATC600F100BT250XT

ECJ-2VB2A103K

15 pF

ATC

C6, C9

C12

10 pF

ATC

10000 pF

0.1 uF

Panasonic

Murata

C11

GRM32NR72A104KA01L

ECJ-2YB1H104K

C13

0.1 uF

Panasonic

Samsung

Panasonic

Vishay

C14, C16

C17, C18

10 uF

ECA-2AM100

10000 pF

10 Ohm

1 kOhm

22 nH

CL31B103KGFNNNE

ERJ-8GEYJ100V

CRCW06031K00FKTA

0805HT-22NTJLB

Coilcraft

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 17 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Recommended Solder Temperature Profile

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

- 18 of 19 -

QPD1019

500W, 50V, 2.9 – 3.3 GHz, GaN RF IMFET

Handling Precautions

Parameter

Rating

Standard

ESDꢀ–ꢀHuman Body Model (HBM)

Class 1C, 1800 V ESDAꢁ/ꢁJEDEC JS-001-2012

Caution!

ESD-Sensitive Device

ESDꢀ–ꢀCharged Device Model (CDM) TBD

JEDEC JESD22-C101F

IPC/JEDEC J-STD-020

MSLꢀ–ꢀMoisture Sensitivity Level

TBD

Solderability

Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.

Solder profiles available upon request.

Contact plating: Ni/Au

RoHS Compliance

This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and

Electronic Equipment) as amended by Directive 2015/863/EU.

This product also has the following attributes:

•

Lead Free

• Halogen Free (Chlorine, Bromine)

• Antimony Free

• TBBP-A (C₁₅H₁₂Br₄0₂) Free

• PFOS Free

• SVHC Free

Contact Information

For the latest specifications, additional product information, worldwide sales and distribution locations, and information about

Qorvo:

Web: www.Qorvo.com

Email: info-sales@qorvo.com

Tel:

Fax:

+1.972.994.8465

+1.972.994.8504

For technical questions and application information:

Email: info-products@qorvo.com

Important Notice

The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained

herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained

herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for

Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any

patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by

such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED

HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER

EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,

INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.

Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,

life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal

injury or death.

Datasheet Rev. A, Mar 22, 2017 | Subject to change without notice

www.qorvo.com

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QPD1019S2 [TRIQUINT]

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