TGF2929-FS [TRIQUINT]
100W, 28V, DC â 3.5 GHz, GaN RF Power Transistor;
| 型号： | TGF2929-FS |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 100W, 28V, DC â 3.5 GHz, GaN RF Power Transistor |
| 文件： | 总21页 (文件大小：3111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
Functional Block Diagram
• Frequency: DC to 3.5 GHz
• Output Power (P3dB): 107 W at 3.5 GHz
• Linear Gain: > 14 dB at 3.5 GHz
• Typical PAE: > 50% at 3.5 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
General Description
Pin Configuration
The TriQuint TGF2929-FS is a 107 W (P3dB) discrete GaN
on SiC HEMT which operates from DC to 3.5 GHz. The
device is constructed with TriQuint’s proven TQGaN25HV
process, which features advanced field plate techniques
to optimize power and efficiency at high drain bias
operating conditions. This optimization can potentially
lower system costs in terms of fewer amplifier line-ups
and lower thermal management costs.
Pin No.
1
Label
VD / RF OUT
VG / RF IN
Source
2
Flange
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Ordering Information
Part
ECCN
Description
Packaged part
Flangeless
TGF2929-FS
EAR99
3.1-3.5 GHz
Evaluation Board
TGF2929-FS-EVB1 EAR99
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 1 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Value
Parameter
Drain Voltage (VD)
Value
28 V (Typ.)
Breakdown Voltage (BVDG
Gate Voltage Range (VG)
Drain Current (ID)
)
145 V min.
-10 to 0 V
12 A
Drain Quiescent Current (IDQ
)
260 mA (Typ.)
7.23 A (Typ.)
-2.9 V (Typ.)
250 °C (Max.)
82 W (Max)
140 W (Max)
Peak Drain Current, Pulse ( ID)
Gate Voltage (VG)
Gate Current (IG)
-28.8 to 33.6 mA
144 W
Power Dissipation (PD)
Channel Temperature (TCH)
Power Dissipation, CW (PD)
Power Dissipation, Pulse (PD)
RF Input Power, CW,
T = 25°C (PIN)
39.8 dBm
275 °C
Channel Temperature (TCH)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Mounting Temperature
(30 Seconds)
320 °C
Pulse signal: 100uS Pulse Width, 20% Duty Cycle
Storage Temperature
-40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Load Pull Performance at 1 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter
GLIN
Min
Typical
21.2
Max
Units
dB
Linear Gain (Power Tuned)
P3dB
Output Power at 3 dB Gain Compression (Power Tuned)
100
W
Power-Added Efficiency at 3 dB Gain Compression (Eff.
Tuned)
PAE3dB
G3dB
75.7
18.2
%
Gain at 3 dB Compression (Power Tuned)
dB
Notes:
1. Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 2 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter
GLIN
Min
Typical
16.7
Max
Units
dB
Linear Gain (Power Tuned)
P3dB
Output Power at 3 dB Gain Compression (Power Tuned)
132
W
Power-Added Efficiency at 3 dB Gain Compression (Eff.
Tuned)
PAE3dB
G3dB
64.4
13.7
%
Gain at 3 dB Compression (Power Tuned)
dB
Notes:
1. Pulse: 100µs, 20%
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 2 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Load Pull Performance at 3.0 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter
GLIN
Min
Typical
15.6
Max
Units
dB
Linear Gain (Power Tuned)
P3dB
Output Power at 3 dB Gain Compression (Power Tuned)
120
W
Power-Added Efficiency at 3 dB Gain Compression (Eff.
Tuned)
PAE3dB
G3dB
65.5
12.6
%
Gain at 3 dB Compression (Power Tuned)
dB
Notes:
1. Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.5 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter
GLIN
Min
Typical
15.8
Max
Units
dB
Linear Gain (Power Tuned)
P3dB
Output Power at 3 dB Gain Compression (Power Tuned)
107
W
Power-Added Efficiency at 3 dB Gain Compression (Eff.
Tuned)
PAE3dB
G3dB
58.4
12.8
%
Gain at 3 dB Compression (Power Tuned)
dB
Notes:
1. Pulse: 100µs, 20%
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 3 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Performance at 3.3GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter
Min
Typical
Max
Units
GLIN
Linear Gain
15.0
dB
P3dB
Output Power at 3 dB Gain Compression
106
51.3
12.0
W
%
PAE3dB Power-Added Efficiency at 3 dB Gain Compression
G3dB Gain at 3 dB Compression
Notes:
dB
1. Pulse: 100µs PW, 20%
2. Performance at 3.3GHz in the 3.1 to 3.5GHz Evaluation Board
RF Characterization – Mismatched Ruggedness at 3.50 GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 260 mA
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Notes:
Typical
10:1
1. Input power established at P3dB at matched load at the output of 3.1 – 3.5 GHz Evaluation Board
2. Pulse: 100uS PW, 20%
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 4 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Thermal and Reliability Information - Pulsed
Parameter
Test Conditions
Value
0.75
Units
°C/W
°C
Thermal Resistance(1) (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance(1) (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance(1) (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance(1) (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
100uS, 5%, Pdiss = 100W
160
1.92E09
0.79
Hours
°C/W
°C
100uS, 10%, Pdiss = 100W
300uS, 20%, Pdiss = 100W
300uS, 50%, Pdiss = 100W
164.3
1.24E09
0.88
Hours
°C/W
°C
173
5.13E08
1.15
Hours
°C/W
°C
200
4.20E07
Hours
Notes:
1. Thermal resistance measured to bottom of package.
Thermal and Reliability Information - CW 1
Parameter
Test Conditions
Value
0.87
Units
ºC/W
°C
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Notes:
85 °C Case
28.8 W Pdiss
110
6.38E11
1.49
Hrs
ºC/W
°C
85 °C Case
57.6 W Pdiss
171
6.29E8
1.62
Hrs
ºC/W
°C
85 °C Case
86.4 W Pdiss
225
5.49E6
1.74
Hrs
ºC/W
°C
85 °C Case
115.2 W Pdiss
285
7.80E4
Hrs
1. Thermal resistance measured to bottom of package.
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 5 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Median Lifetime
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 6 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Maximum Channel Temperature - Pulsed
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 7 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 260 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. NaN indicates the harmonic impedances are uncontrolled.
1GHz, Load-pull
Max Power is 50dBm
at Z = 2.241+0.492i
•
Zs(fo) = 1.45-0.27i
Zs(2fo) = 6.54+24.95i
Ω
Ω
Ω
= -0.6764+0.0592i
Max Gain is 20.4dB
Γ
Zs(3fo) = 3.67-16.91i
Zl(2fo) = NaN
Zl(3fo) = NaN
Ω
•
Ω
at Z = 1.648+2.661i
= -0.6861+0.3361i
Ω
Ω
Γ
Max PAE is 75.7%
at Z = 2.391+3.013i
•
0
.
4
Ω
= -0.588+0.3395i
Γ
20.4
75.5
19.9
19.4
73.5
71.5
49.9
49.7
49.5
Power
Gain
PAE
Zo = 11.7
Ω
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 8 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 260 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. NaN indicates the harmonic impedances are uncontrolled.
2GHz, Load-pull
Max Power is 51.2dBm
at Z = 2.555-1.967i
•
Zs(fo) = 1.33-4.22i
Zs(2fo) = 1.06+1.79i
Ω
Ω
Ω
= -0.6108-0.2223i
Max Gain is 15.1dB
Γ
Zs(3fo) = 2.31+1.72i
Zl(2fo) = NaN
Zl(3fo) = NaN
Ω
•
Ω
at Z = 3.421+0.937i
= -0.5416+0.0955i
Ω
Ω
Γ
Max PAE is 64.4%
at Z = 1.679-0.781i
•
14.9
Ω
= -0.7431-0.1018i
Γ
14.4
63.9
13.9
61.9
59.9
51
50.8
50.6
3
.
0
-
Power
Gain
PAE
Zo = 11.7
Ω
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 9 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 260 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. NaN indicates the harmonic impedances are uncontrolled.
3GHz, Load-pull
Zs(fo) = 5.16-8.3i
Zs(2fo) = 3.73-4.83i
Max Power is 50.8dBm
•
Ω
at Z = 2.794-4.043i
Ω
Ω
Zs(3fo) = 37.97-7.46i
Zl(2fo) = NaN
Zl(3fo) = NaN
= -0.4979-0.4178i
Max Gain is 14.4dB
Ω
Γ
•
Ω
at Z = 1.705-1.63i
Ω
Ω
= -0.7202-0.2092i
Max PAE is 65.5%
Γ
•
at Z = 1.752-2.538i
= -0.6797-0.317i
Ω
Γ
14.2
64.4
62.4
60.4
13.7
13.2
50.7
50.5
50.3
3
.
0
-
Power
Gain
PAE
Zo = 11.7
Ω
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 10 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 260 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. NaN indicates the harmonic impedances are uncontrolled.
3.5GHz, Load-pull
Zs(fo) = 13-0.58i
Zs(2fo) = 7.62+3.24i
Ω
Max Power is 50.3dBm
at Z = 2.992-5.16i
Ω
•
Ω
Zs(3fo) = 41.24+12.78i
Zl(2fo) = NaN
Zl(3fo) = NaN
Ω
= -0.4178-0.4979i
Max Gain is 14dB
Γ
•
Ω
Ω
at Z = 1.839-3.661i
Ω
= -0.6106-0.4355i
Max PAE is 58.4%
Γ
•
at Z = 1.839-3.661i
= -0.6106-0.4355i
Ω
Γ
53.5
55.5
13.9
57.5
13.4
12.9
50.3
50.1
49.9
3
.
0
-
Power
Gain
PAE
Zo = 11.7
Ω
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 11 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Typical Load-pull Performance – Power Tuned(1, 2)
1. Vds = 28V, Idq = 260mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C
2. Performance measured at device’s reference planes. See page 18.
TGF2929-FS Gain and PAE vs. Pout
TGF2929-FS Gain and PAE vs. Pout
2GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
1GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
65
60
55
50
45
40
35
30
25
20
15
25.0
24.0
23.0
22.0
21.0
20.0
19.0
18.0
17.0
16.0
15.0
65
60
55
50
45
40
35
30
25
20
15
Zs0 = 1.33-j4.22Ω
Zl0 = 2.56-j1.97Ω
Zs0 = 1.45-j0.27
Zl0 = 2.24+j0.49Ω
44
45
46
47
48
49
50
51
39 40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
Pout [dBm]
TGF2929-FS Gain and PAE vs. Pout
TGF2929-FS Gain and PAE vs. Pout
3GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
3.5GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
60
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
60
55
50
45
40
35
30
25
20
15
10
55
50
45
40
35
30
25
20
15
10
Zs0 = 5.16-j8.30Ω
Zl0 = 2.79-j4.04Ω
Zs0 = 13.0-j0.58Ω
Zl0 = 2.99-j5.16Ω
40 41 42 43 44 45 46 47 48 49 50 51
Pout [dBm]
38 39 40 41 42 43 44 45 46 47 48 49 50 51
Pout [dBm]
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 12 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Typical Load-pull Performance – Efficiency Tuned(1, 2)
1. Vds = 28V, Idq = 260mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C
2. Performance measured at device’s reference planes. See page 18.
TGF2929-FS Gain and PAE vs. Pout
2GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
70
65
60
55
50
45
40
35
30
25
20
Zs0 = 1.33-j4.22Ω
Zl0 = 1.68-j0.78Ω
40 41 42 43 44 45 46 47 48 49 50 51
Pout [dBm]
TGF2929-FS Gain and PAE vs. Pout
TGF2929-FS Gain and PAE vs. Pout
3GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
3.5GHz; Vds = 28V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
75
70
65
60
55
50
45
40
35
30
25
20.0
70
65
60
55
50
45
40
35
30
25
20
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
Zs0 = 5.16-j8.30Ω
Zl0 = 1.75-j2.54Ω
Zs0 = 13.0-j0.58Ω
Zl0 = 1.84-j3.66Ω
41
42
43
44
45
46
47
48
49
50
39 40 41 42 43 44 45 46 47 48 49
Pout [dBm]
Pout [dBm]
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 13 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Performance Over Temperature (1, 2)
Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
G3dB vs. Frequency vs. Temperature
P3dB vs. Frequency vs. Temperature
20
19
18
17
16
15
14
13
12
11
10
9
150.0
140.0
130.0
120.0
110.0
100.0
90.0
-40°C
-20°C
0°C
25°C
45°C
65°C
85°C
-40°C
-20°C
0°C
80.0
25°C
45°C
65°C
85°C
8
70.0
7
60.0
6
5
50.0
3.1
3.2
3.3
3.4
3.5
3.1
3.2
3.3
3.4
3.5
Frequency [GHz]
Frequency [GHz]
PAE3dB vs. Frequency vs. Temperature
-40°C
100
90
80
70
60
50
40
30
20
10
-20°C
0°C
25°C
45°C
65°C
85°C
0
3.1
3.2
3.3
3.4
3.5
Frequency [GHz]
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 260 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 14 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Performance at 25°C (1, 2)
Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
P3dB and G3dB vs. Frequency @ 25°C
PAE vs. Frequency at 25°C
150
140
130
120
110
100
90
20.0
18.5
17.0
15.5
14.0
12.5
11.0
9.5
100
90
80
70
60
50
40
30
20
10
0
P3dB
G3dB
80
70
8.0
60
6.5
50
5.0
3.1
3.2
3.3
3.4
3.5
3.1
3.2
3.3
3.4
3.5
Frequency [GHz]
Frequency [GHz]
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 260 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 15 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Application Circuit
DC_V
ID=Vg
DC_V
ID=Vd
CAP
ID=C7
CAP
ID=C4
CAP
ID=C6
RES
ID=R2
CAP
ID=C5
IND
ID=L1
IND
ID=L2
CAP
ID=C8
RES
ID=R1
PORT
P=1
Z=50 Ohm
2
PORT
P=2
Z=50 Ohm
1
FET
CAP
ID=C2
3
CAP
ID=C1
CAP
ID=C3
Bias-up Procedure
Bias-down Procedure
1. VG set to -5 V.
2. VD set to 28 V.
3. Adjust VG more positive until quiescent ID is 260
mA.
4. Apply RF signal.
1. Turn off RF signal.
2. Turn off VD and wait 1 second to allow drain
capacitor dissipation.
3. Turn off VG.
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 16 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
Value
100 Ω
5.6 pF
1.0 pF
22 nH
10 Ω
Qty Manufacturer
Part Number
CRCW0603100RJNEA
600S5R6BT
R1
C1, C2
C3
1
2
1
1
1
1
1
1
1
1
1
Vishay/Dale
ATC
ATC
600S1R0BT
L1
Coilcraft
Vishay/Dale
Murata
0805CS-220X-LB
CRCW060310R0JNEA
C1632X5R0J106M130AC
A04T_L
R2
C4
10 uF
L2
12 nH
2400 pF
1000 pF
220 uF
15 pF
Coilcraft
Murata
C5
C08BL242X-5UN-X0T
800B102JT50XT
C6
ATC
C7
United Chemi-Con
ATC
EMVY500ADA221MJA0G
600S150JT250XT
C8
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 17 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Pin Layout
Note:
The TGF2929-FS will be marked with the “TGF2929-FS” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
Pin Description
Pin
Symbol
Description
1
VD / RF OUT
Drain voltage / RF Output
2
3
VG / RF IN
Flange
Gate voltage / RF
Source connected to ground
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 18 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Mechanical Information
All dimensions are in inches.
Note:
Unless otherwise noted, all tolerances are +/-0.005 inches. This package is lead-free/RoHS-compliant. The plating material on
the leads is NiAu. It is compatible with both lead-free and tin-lead soldering processes.
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 19 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°C
Caution! ESD-Sensitive Device
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: Class 1B
Value:
Test:
Standard:
≥ 500 V and < 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
MSL Rating
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 20 of 21 -
© 2014 TriQuint
www.triquint.com
TGF2929-FS
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information
is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain
and verify the latest relevant information before placing orders for TriQuint products. The information contained herein
or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev A - 12-11-14
Disclaimer: Subject to change without notice
- 21 of 21 -
© 2014 TriQuint
www.triquint.com
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