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TGF2953_15 [TRIQUINT]

12 Watt Discrete Power GaN on SiC HEMT;
TGF2953_15
型号： TGF2953_15
厂家： TRIQUINT SEMICONDUCTOR    TRIQUINT SEMICONDUCTOR
描述：

12 Watt Discrete Power GaN on SiC HEMT
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TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Applications  
•
•
•
•
•
•
Marine radar  
Satellite communications  
Point to point communications  
Military communications  
Broadband amplifiers  
High efficiency amplifiers  
Product Features  
Functional Block Diagram  
• Frequency Range: DC - 12 GHz  
• 41.2 dBm Nominal PSAT at 3.5 GHz  
• 73.7% Maximum PAE at 3.5 GHz  
• 18.2 dB Nominal Power Gain at 3.5 GHz  
• Bias: VD = 32 V, IDQ = 50 mA  
• Technology: TQGaN25 on SiC  
• Chip Dimensions: 1.01 x 1.14 x 0.10 mm  
General Description  
Pad Configuration  
The TriQuint TGF2953 is a discrete 2.52 mm GaN on  
SiC HEMT which operates from DC-12 GHz. The  
TGF2953 is designed using TriQuint’s proven TQGaN25  
production process. This process features advanced  
field plate techniques to optimize microwave power and  
efficiency at high drain bias operating conditions.  
Pad No.  
1-2  
Symbol  
VG / RF IN  
3
VD / RF OUT  
Source / Ground  
Backside  
The TGF2953 typically provides 41.2 dBm of saturated  
output power with power gain of 18.2 dB at 3.5 GHz.  
The maximum power added efficiency is 73.7 % which  
makes the TGF2953 appropriate for high efficiency  
applications.  
Ordering Information  
Part ECCN  
Description  
12 Watt GaN HEMT  
Lead-free and RoHS compliant.  
TGF2953  
EAR99  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 1 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Absolute Maximum Ratings  
Recommended Operating Conditions  
Parameter  
Drain to Gate Voltage (VDG  
Value  
100 V  
Parameter  
Drain Voltage Range (VD)  
Value  
32 V  
)
Drain Voltage (VD)  
40 V  
Drain Quiescent Current (IDQ  
)
50 mA  
Gate Voltage Range (VG)  
Drain Current (ID)  
-10 to 0 V  
1.5 A  
Drain Current Under RF Drive ( ID)(1)  
820 mA  
Pinch-off Gate Voltage (VG)  
−3.5 V (Typ.)  
225°C (Max.)  
Gate Current (IG)  
-2.52 to 4.2mA  
17 W  
Channel Temperature (TCH  
)
Power Dissipation (PD)  
(1) 10% pulses at 3GHz, Power Tuned  
CW Input Power (PIN) @ 10GHz  
Channel Temperature (TCH  
34 dBm  
275°C  
)
Mounting Temperature (30 Sec.)  
Storage Temperature  
320°C  
−65 to 150°C  
Operation of this device outside the parameter ranges given above  
may cause permanent damage. These are stress ratings only, and  
functional operation of the device at these conditions is not implied.  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 2 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
RF Characterization – Model Optimum Power Tune  
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 19 for reference planes.  
Parameter  
Frequency (F)  
Typical Value  
6
Units  
GHz  
V
1
3
10  
32  
15  
32  
Drain Voltage (VD)  
32  
32  
32  
Bias Current (IDQ  
Output P3dB (P3dB  
PAE @ P3dB (PAE3dB  
Gain @ P3dB (G3dB  
)
50  
50  
50  
50  
50  
mA  
)
41.1  
63.4  
26.8  
41.2  
62.2  
17.9  
41.1  
58.5  
14.2  
41.2  
53.7  
10.0  
40.8  
45.0  
7.0  
dBm  
%
)
)
dB  
Parallel Output Resistance (1)  
(Rp)  
96.0  
91.3  
86.7  
69.5  
41.3  
Ω∙mm  
Parallel Output Capacitance (1)  
(Cp)  
0.005  
0.230  
0.304  
0.331  
0.425  
pF/mm  
Load Impedance (ZL)  
Source Impedance (ZS)  
Notes:  
38.1+j0.12  
4.02+j29.6  
29.1+j14.4  
1.80+j7.03  
17.3+j17.2  
1.44+j3.00  
8.92+j12.9  
0.90+j0.00  
4.38+j7.25  
1.20-j2.41  
Ω
Ω
1. Large signal equivalent output network (normalized).  
RF Characterization – Model Optimum Efficiency Tune  
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 19 for reference planes.  
Typical Value  
6
Units  
GHz  
V
Parameter  
Frequency (F)  
1
3
10  
32  
15  
32  
Drain Voltage (VD)  
32  
32  
32  
Bias Current (IDQ  
Output P3dB (P3dB  
PAE @ P3dB (PAE3dB  
Gain @ P3dB (G3dB  
)
50  
50  
50  
50  
50  
mA  
)
39.8  
68.6  
28.3  
39.9  
67.7  
19.4  
40.0  
62.8  
15.1  
40.8  
56.0  
10.3  
40.6  
47.3  
7.9  
dBm  
%
)
)
dB  
Parallel Output Resistance (1)  
(Rp)  
156.1  
0.320  
151.3  
0.363  
134.7  
0.366  
86.3  
52.8  
Ω∙mm  
Parallel Output Capacitance (1)  
(Cp)  
0.355  
0.391  
pF/mm  
Load Impedance (ZL)  
Source Impedance (ZS)  
Notes:  
56.4+j17.7  
4.02+j29.6  
29.0+j30.0  
1.80+j7.03  
12.0+j22.3  
1.44+j3.00  
7.27+j14.0  
0.90+j0.00  
4.38+j8.52  
1.20-j2.41  
Ω
Ω
1. Large signal equivalent output network (normalized).  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 3 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
RF Characterization – Measured Optimum Power Tune  
Measured conditions unless otherwise noted: T = 25°C, Bond wires included, Pulse: 100uS PW, 10%.  
Parameter  
Frequency (F)  
Typical Value  
Units  
GHz  
V
1
32  
3.5  
32  
Drain Voltage (VD)  
Bias Current (IDQ  
Input Power  
Output Power  
PAE  
)
50  
50  
mA  
dBm  
dBm  
%
16  
23  
41.6  
41.2  
70.7  
63.3  
Gain  
25.6  
18.2  
dB  
Load Impedance (ZL)  
Source Impedance (ZS)  
Notes:  
33.4+j11.0  
12.0+j26.5  
21.9+j12.1  
4.85+j3.46  
Ω
Ω
2. Large signal equivalent output network (normalized).  
RF Characterization – Measured Optimum Efficiency Tune  
Measured conditions unless otherwise noted: T = 25°C, Bond wires included, Pulse: 100uS PW, 10%.  
Typical Value  
Units  
GHz  
V
Parameter  
Frequency (F)  
1
32  
3.5  
32  
Drain Voltage (VD)  
Bias Current (IDQ  
Input Power  
Output Power  
PAE  
)
50  
50  
mA  
dBm  
dBm  
%
16  
23  
40.6  
40.1  
80.7  
73.7  
Gain  
24.6  
17.1  
dB  
Load Impedance (ZL)  
Source Impedance (ZS)  
Notes:  
44.0+j26.6  
12.0+j26.5  
26.2+j29.3  
4.85+j3.46  
Ω
Ω
2. Large signal equivalent output network (normalized).  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 4 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Thermal and Reliability Information - Pulsed (1)  
Parameter  
Test Conditions  
Value  
7.52  
Units  
ºC/W  
°C  
Thermal Resistance, θJC  
Channel Temperature, TCH  
Median Lifetime, TM  
Thermal Resistance, θJC  
PD = 12.6 W, Tbaseplate = 85°C  
Pulse: 100uS, 5%  
180  
1.07E08  
7.74  
Hrs  
°C/W  
°C  
PD = 12.6 W, Tbaseplate = 85°C  
Pulse: 100uS, 10%  
Channel Temperature, TCH  
Median Lifetime, TM  
Thermal Resistance, θJC  
Channel Temperature, TCH  
Median Lifetime, TM  
Thermal Resistance, θJC  
Channel Temperature, TCH  
Median Lifetime, TM  
Notes:  
183  
8.20E07  
8.19  
Hrs  
ºC/W  
°C  
PD = 12.6 W, Tbaseplate = 85°C  
Pulse: 100uS, 20%  
188  
4.76E07  
9.75  
Hrs  
ºC/W  
°C  
PD = 12.6 W, Tbaseplate = 85°C  
Pulse: 100uS, 50%  
208  
7.88E06  
Hrs  
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.  
Thermal and Reliability Information - CW (1)  
Parameter  
Test Conditions  
Value  
10.7  
Units  
ºC/W  
°C  
Thermal Resistance, θJC  
Channel Temperature, TCH  
Median Lifetime, TM  
Thermal Resistance, θJC  
PD = 5.04 W, Tbaseplate = 85°C  
CW  
139  
9.00E09  
11.4  
Hrs  
°C/W  
°C  
PD = 7.56 W, Tbaseplate = 85°C  
CW  
Channel Temperature, TCH  
Median Lifetime, TM  
Thermal Resistance, θJC  
Channel Temperature, TCH  
Median Lifetime, TM  
Thermal Resistance, θJC  
Channel Temperature, TCH  
Median Lifetime, TM  
Notes:  
171  
2.57E08  
12.1  
Hrs  
ºC/W  
°C  
PD = 10.08 W, Tbaseplate = 85°C  
CW  
207  
8.44E06  
12.9  
Hrs  
ºC/W  
°C  
PD = 12.6 W, Tbaseplate = 85°C  
CW  
248  
3.00E05  
Hrs  
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 5 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Median LifeTime  
Median Lifetime vs. Channel Temperature  
1E+18  
1E+17  
1E+16  
1E+15  
1E+14  
1E+13  
1E+12  
1E+11  
1E+10  
1E+09  
1E+08  
1E+07  
1E+06  
1E+05  
1E+04  
25  
50  
75 100 125 150 175 200 225 250 275  
Channel Temperature, TCH (°C)  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 6 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Maximum Channel Temperature - Pulsed  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 7 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Maximum Channel Temperature - CW  
Peak Temperature vs. Pdiss (W) for Fixed 85 C on CuMo Carrier Plate  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
Carrier Plate held at 85C  
Recommended Operating Limit  
2.00  
4.00  
6.00  
8.00  
10.00  
12.00  
14.00  
16.00  
CW Power Dissipation, W  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 8 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Model Maximum Gain Performance  
Bond wires are not included. See page 19 for reference planes.  
Maximum Gain vs. Frequency  
35  
30  
25  
20  
15  
10  
5
Vd = 12V, Idq = 50mA  
Vd = 12V, Idq = 125mA  
Vd = 32V, Idq = 50mA  
Vd = 32V, Idq = 125mA  
0
0
5
10  
15  
20  
25  
30  
Frequency [GHz]  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 9 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Measured Maximum Gain Performance  
Bond wires are included. See page 19 for reference planes.  
Maximum Gain vs. Frequency  
40  
35  
30  
25  
20  
15  
10  
5
Vd = 32V, Idq = 50mA  
Vd = 32V, Idq = 125mA  
0
0
5
10  
15  
20  
25  
30  
Frequency [GHz]  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 10 of 21 -  
© 2014 TriQuint  
www.triquint.com  
                                                                                                              
                                       
                                                                                              
                                 
                                                                                              
                                 
                                                                                                                
                                 
                                                                                              
                                 
                                                                                              
                                                                                                                
                                                                                              
                              
                                                                                              
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Model Load Pull Contours  
Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.  
3dB compression performance referenced to maximum large-signal gain.  
1GHz, Load-pull  
Max Power is 41.1dBm  
at Z = 38.094+0.12i  
•
Ω
Zs(fo) = 4.02+29.6i  
Zs(2fo) = 28  
= 0.2075+0.0015i  
Max Gain is 32dB  
•
Ω
Γ
Ω
Zs(3fo) = 28  
Ω
Zl(2fo) = 25  
at Z = 22.399+31.115i  
= 0.2628+0.4839i  
Ω
Ω
Ω
Γ
Zl(3fo) = 25  
Max PAE is 68.6%  
at Z = 56.434+17.655i  
Ω
•
= 0.4136+0.1271i  
Γ
31.7  
31.2  
30.7  
65.9  
60.9  
55.9  
40.9  
40.7  
40.5  
Power  
Gain  
PAE  
Zo = 25  
Ω
Datasheet: Rev A 10-22-14  
© 2014 TriQuint  
Disclaimer: Subject to change without notice  
- 11 of 21 -  
www.triquint.com  
                                                                                                              
                                      
                                                                                              
                                  
                                                                                              
                                  
                                                                                                                
                                 
                                                                                              
                                 
                                                                                              
                                                                                                                
                                                                                              
                              
                                                                                              
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Model Load Pull Contours  
Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.  
3dB compression performance referenced to maximum large-signal gain.  
3GHz, Load-pull  
Max Power is 41.2dBm  
at Z = 29.1+14.431i  
•
Ω
Zs(fo) = 1.8+7.03i  
Zs(2fo) = 6.1  
= 0.1372+0.2302i  
Max Gain is 21.4dB  
•
Ω
Γ
Ω
Zs(3fo) = 6.1  
Ω
Zl(2fo) = 25  
at Z = 10.497+41.418i  
= 0.4035+0.696i  
Ω
Ω
Γ
Zl(3fo) = 25  
Max PAE is 67.7%  
at Z = 29.028+30.028i  
Ω
•
Ω
= 0.293+0.393i  
Γ
21.1  
20.6  
20.1  
3
66.7  
61.7  
56.7  
41.1  
40.9  
40.7  
Power  
Gain  
PAE  
Zo = 25  
Ω
Datasheet: Rev A 10-22-14  
© 2014 TriQuint  
Disclaimer: Subject to change without notice  
- 12 of 21 -  
www.triquint.com  
                                                                                                            
                                    
                                                                                          
                                  
                                                                                          
                                  
                                                                                                          
                                 
                                                                                          
                                 
                                                                                          
                                                                                                            
                                                                                          
                              
                                                                                          
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Model Load Pull Contours  
Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.  
3dB compression performance referenced to maximum large-signal gain.  
6GHz, Load-pull  
Max Power is 41.1dBm  
at Z = 17.251+17.159i  
•
Ω
Zs(fo) = 1.44+3i  
Zs(2fo) = 6.1  
= 0.0859+0.41i  
Max Gain is 15.3dB  
•
Ω
Γ
Ω
Zs(3fo) = 6.1  
Ω
Zl(2fo) = 21  
at Z = 6.873+24.51i  
= 0.1502+0.7472i  
Ω
Ω
Γ
Zl(3fo) = 21  
Max PAE is 62.8%  
•
Ω
at Z = 12.024+22.285i  
= 0.1261+0.5897i  
Ω
Γ
14.9  
62.5  
14.4  
13.9  
57.5  
52.5  
40.9  
40.7  
40.5  
Power  
Gain  
PAE  
Zo = 21  
Ω
Datasheet: Rev A 10-22-14  
© 2014 TriQuint  
Disclaimer: Subject to change without notice  
- 13 of 21 -  
www.triquint.com  
                                                                                                             
                                 
                                                                                            
                                  
                                                                                            
                                  
                                                                                                             
                                 
                                                                                            
                                 
                                                                                            
                                                                                                             
                                                                                            
                              
                                                                                            
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Model Load Pull Contours  
Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.  
3dB compression performance referenced to maximum large-signal gain.  
10GHz, Load-pull  
Max Power is 41.2dBm  
at Z = 8.924+12.857i  
•
Ω
Zs(fo) = 0.9  
= 0.0708+0.5211i  
Max Gain is 11.1dB  
•
Ω
Γ
Zs(2fo) = 6.1  
Zs(3fo) = 6.1  
Zl(2fo) = 14  
Ω
Ω
at Z = 5.448+18.933i  
= 0.2608+0.7196i  
Ω
Ω
Ω
Γ
Zl(3fo) = 14  
Max PAE is 56%  
at Z = 7.266+13.961i  
Ω
•
= 0.0799+0.604i  
Γ
11  
10.5  
9.96  
9.46  
50.8  
45.8  
55.8  
41.1  
40.9  
40.7  
Power  
Gain  
PAE  
Zo = 14  
Ω
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 14 of 21 -  
© 2014 TriQuint  
www.triquint.com  
                                                                                                              
                                     
                                                                                              
                                
                                                                                              
                                
                                                                                                              
                                   
                                                                                              
                                 
                                                                                              
                                                                                                              
                                                                                              
                             
                                                                                              
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Model Load Pull Contours  
Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.  
3dB compression performance referenced to maximum large-signal gain.  
15GHz, Load-pull  
Max Power is 40.8dBm  
at Z = 4.383+7.249i  
•
Ω
Zs(fo) = 1.2-2.41i  
Zs(2fo) = 2  
= 0.0377+0.5633i  
Max Gain is 10.5dB  
•
Ω
Γ
Ω
Zs(3fo) = 2  
Zl(2fo) = 49.97  
at Z = 1.77+12.507i  
= 0.3794+0.7945i  
Ω
Ω
Ω
Γ
Zl(3fo) = 21  
Max PAE is 47.3%  
•
Ω
at Z = 4.381+8.521i  
Ω
= 0.1231+0.6035i
9.8  
10.3  
Γ
9.3  
44.4  
39.4  
40.5  
40.3  
40.1  
34.4  
Power  
Gain  
PAE  
Zo = 8  
Ω
Datasheet: Rev A 10-22-14  
© 2014 TriQuint  
Disclaimer: Subject to change without notice  
- 15 of 21 -  
www.triquint.com  
                                                                                                            
                                     
                                    
                                     
                                     
                                                                                                      
                                                                                                           
                                                                      
                                                                      
                                                                                                            
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Model Power Tuned Data  
Bond wires not included. See page 19 for reference planes.  
TGF2953 Gain and PAE vs. Output Power  
1GHz, Vds =32V, Idq =50mA, 100uS, 10%, Power Tuned  
TGF2953 Gain and PAE vs. Output Power  
3GHz, Vds =32V, Idq =50mA, 100uS, 10%, Power Tuned  
35  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
34  
33  
Zs = 1.80+j7.03  
Zl = 29.1+j14.4  
Ω
Ω
Zs = 4.02+j29.6  
Ω
Zl = 38.1+j0.12  
Ω
32  
31  
30  
29  
28  
27  
Gain  
PAE  
Gain  
PAE  
26  
25  
32  
33  
34  
35  
36  
37  
Output Power [dBm]  
38  
39  
40  
41  
42  
32  
33  
34  
35  
36  
37  
Output Power [dBm]  
38  
39  
40  
41  
42  
TGF2953 Gain and PAE vs. Output Power  
6GHz, Vds =32V, Idq =50mA, 100uS, 10%, Power Tuned  
TGF2953 Gain and PAE vs. Output Power  
10GHz, Vds =32V, Idq =50mA, 100uS, 10%, Power Tuned  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
Zs = 1.44+j3.00Ω  
Zl = 17.3+j17.2Ω  
Zs = 0.9Ω  
Zl = 8.92+j12.9Ω  
Gain  
PAE  
Gain  
PAE  
8
32  
32  
33  
34  
35  
36  
37  
38  
Output Power [dBm]  
39  
40  
41  
42  
33  
34  
35  
36  
37  
38  
Output Power [dBm]  
39  
40  
41  
42  
TGF2953 Gain and PAE vs. Output Power  
15GHz, Vds =32V, Idq =50mA, 100uS, 10%, Power Tuned  
15  
60  
14  
13  
12  
11  
10  
9
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
Zs = 1.20-j2.40  
Ω
Zl = 4.38+j7.25  
Ω
8
Gain  
PAE  
7
6
5
32 33 34 35  
36 37 38 39 40 41  
Output Power [dBm]  
42  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 16 of 21 -  
© 2014 TriQuint  
www.triquint.com  
                                                                                                         
                                  
                                                                                                        
                                  
                                                                                                   
                                  
                                                                                                         
                                                                      
                                                                      
                                   
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Model Efficiency Tuned Data  
Bond wires not included. See page 19 for reference planes.  
TGF2953 Gain and PAE vs. Output Power  
3GHz, Vds =32V, Idq =50mA, 100uS, 10%, Efficiency Tuned  
TGF2953 Gain and PAE vs. Output Power  
1GHz, Vds =32V, Idq =50mA, 100uS, 10%, Efficiency Tuned  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
Zs = 4.02+j29.6  
Ω
Zl = 56.4+j17.7  
Ω
Zs = 1.80+j7.03  
Zl = 29.0+j30.0  
Ω
Ω
Gain  
PAE  
Gain  
PAE  
31  
32  
33  
34  
35  
36  
Output Power [dBm]  
37  
38  
39  
40  
41  
31  
32  
33  
34  
35  
Output Power [dBm]  
36  
37  
38  
39  
40  
41  
TGF2953 Gain and PAE vs. Output Power  
6GHz, Vds =32V, Idq =50mA, 100uS, 10%, Efficiency Tuned  
TGF2953 Gain and PAE vs. Output Power  
10GHz, Vds =32V, Idq =50mA, 100uS, 10%, Efficiency Tuned  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
Zs = 1.44+j3.00  
Zl = 12.0+j22.3  
Ω
Ω
Zs = 0.9  
Ω
Zl = 7.27+j14.0  
Ω
Gain  
PAE  
Gain  
PAE  
31  
32  
33  
34  
35  
36  
37  
Output Power [dBm]  
38  
39  
40  
41  
31  
32  
33  
34  
35  
36  
37  
Output Power [dBm]  
38  
39  
40  
41  
TGF2953 Gain and PAE vs. Output Power  
15GHz, Vds =32V, Idq =50mA, 100uS, 10%, Efficiency Tuned  
16  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
14  
13  
12  
11  
10  
9
Zs = 1.20-j2.41  
Zl = 4.38+j8.52  
Ω
Ω
Gain  
PAE  
8
7
6
31  
15  
41  
32  
33  
34  
35  
36  
37  
Output Power [dBm]  
38  
39  
40  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 17 of 21 -  
© 2014 TriQuint  
www.triquint.com  
                                                                       
                                                                               
                                                                                    
                                                                       
                                                                                
                                                                                     
                                                                       
                                                                                
                                                                                     
                                                                       
                                                                               
                                                                                   
                                                                       
                                                                                
                                                                                    
                                                                       
                                                                                
                                                                                    
                                                                             
                                                                       
                                                                               
                                                                                    
                                                                       
                                                                                
                                                                                    
                                                                       
                                                                                
                                                                                     
                                                                       
                                                                               
                                                                                   
                                                                       
                                                                                
                                                                                   
                                                                       
                                                                                
                                                                                     
                                                                             
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Measured Power Tuned Data  
Bond wires included.  
TGF2953 Measured Data  
1GHz, 32V, 50mA, 100uS, 10%, Power Tuned  
31  
30  
29  
28  
80  
72  
64  
56  
s = 0.686 122  
°
Γ
Γ
Γ
Γ
Γ
Γ
∠
s2 = 0.783 -7.3  
∠
°
s3 = 0.832 -131  
∠
27  
26  
25  
24  
23  
22  
21  
°
48  
40  
32  
24  
16  
8
l = 0.236 139  
∠
°
l2 = 0.340 -46  
∠
°
l3 = 0.419 169  
∠
°
Zo = 50  
Ω
0
30 31 32 33 34 35 36 37 38 39 40 41 42  
Output Power [dBm]  
TGF2953 Measured Data  
3.5GHz, 32V, 50mA, 100uS, 10%, Power Tuned  
80  
72  
64  
56  
48  
40  
32  
24  
16  
8
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
s = 0.824 172  
°
Γ
∠
s2 = 0.313 -85  
°
Γ
∠
s3 = 0.593 174  
°
Γ
∠
l = 0.415 139  
°
Γ
∠
l2 = 0.518 10  
°
Γ
∠
l3 = 0.458 -116  
°
Γ
∠
Zo = 50  
Ω
0
30 31 32 33 34 35 36 37 38 39 40 41 42  
Output Power [dBm]  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 18 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Mechanical Drawing  
Bond Pads  
Pad No.  
Description Dimensions  
1, 2  
Gate  
0.125 x 0.125  
0.150 x 0.564  
1.007 x 1.139  
3
Drain  
Source /  
Ground  
Die Backside  
1. Units: millimeters  
2. Thickness: 0.100 mm  
3. Die xy size tolerance: 0.050 mm  
Reference Planes  
Reference Planes  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 19 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Model  
A model is available for download from Modelithics (at http://www.modelithics.com/mvp/Triquint&tab=3) by approved  
TriQuint customers. The model is compatible with the industry’s most popular design software including Agilent ADS  
and National Instruments/AWR applications. Once on the Modelithics web page, the user will need to register for a free  
license before being granted the download.  
Assembly Notes  
Component placement and adhesive attachment assembly notes:  
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.  
• Air bridges must be avoided during placement.  
• The force impact is critical during auto placement.  
• Organic attachment (i.e. epoxy) not recommended.  
Reflow process assembly notes:  
• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.  
• An alloy station or conveyor furnace with reducing atmosphere should be used.  
• Do not use any kind of flux.  
• Coefficient of thermal expansion matching is critical for long-term reliability.  
• Devices must be stored in a dry nitrogen atmosphere.  
Interconnect process assembly notes:  
• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.  
• Force, time, and ultrasonics are critical bonding parameters.  
• Aluminum wire should not be used.  
• Devices with small pad sizes should be bonded with 0.0007-inch wire.  
Disclaimer  
GaN/SiC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed  
during handling, assembly and test.  
Bias-up Procedure  
Bias-down Procedure  
1. VG set to -5 V.  
2. VD set to 32 V.  
3. Adjust VG more positive until quiescent ID is 50 mA.  
4. Apply RF signal.  
1. Turn off RF signal.  
2. Turn off VD and wait 1 second to allow drain  
capacitor dissipation.  
3. Turn off VG.  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 20 of 21 -  
© 2014 TriQuint  
www.triquint.com  
TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Product Compliance Information  
ESD Sensitivity Ratings  
Solderability  
Compatible with gold/tin (320°C maximum reflow  
temperature) soldering processes.  
Caution! ESD-Sensitive Device  
RoHs Compliance  
This part is compliant with EU 2002/95/EC RoHS  
directive (Restrictions on the Use of Certain Hazardous  
Substances in Electrical and Electronic Equipment).  
ESD Rating: TBD  
Value:  
Test:  
TBD  
TBD  
Standard: TBD  
This product also has the following attributes:  
•
•
•
•
•
•
Lead Free  
Halogen Free (Chlorine, Bromine)  
Antimony Free  
TBBP-A (C15H12Br402) Free  
PFOS Free  
SVHC Free  
Contact Information  
For the latest specifications, additional product information, worldwide sales and distribution locations, and information  
about TriQuint:  
Web: www.triquint.com  
Email: info-sales@triquint.com  
Tel:  
Fax:  
+1.972.994.8465  
+1.972.994.8504  
For technical questions and application information:  
Email: info-products@triquint.com  
Important Notice  
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information  
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.  
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The  
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such  
information is entirely with the user. All information contained herein is subject to change without notice. Customers  
should obtain and verify the latest relevant information before placing orders for TriQuint products. The information  
contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights,  
licenses, or any other intellectual property rights, whether with regard to such information itself or anything described  
by such information.  
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining  
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or  
death.  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
- 21 of 21 -  
© 2014 TriQuint  
www.triquint.com  

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