TGF2955 [TRIQUINT]
40 Watt Discrete Power GaN on SiC HEMT;
| 型号： | TGF2955 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 40 Watt Discrete Power GaN on SiC HEMT |
| 文件： | 总19页 (文件大小：1518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Applications
• Defense & Aerospace
• Broadband Wireless
Product Features
Functional Block Diagram
• Frequency Range: DC - 12 GHz
• 46.4 dBm Nominal PSAT at 3 GHz
• 69.0% Maximum PAE at 3 GHz
• 19.2 dB Nominal Power Gain at 3 GHz
• Bias: VD = 32 V, IDQ = 150 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 1.01 x 2.31 x 0.10 mm
General Description
Pad Configuration
The TriQuint TGF2955 is a discrete 7.56 mm GaN on
SiC HEMT which operates from DC-12 GHz. The
TGF2955 is designed using TriQuint’s proven TQGaN25
production process. This process features advanced
field plate techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
Pad No.
1-6
Symbol
VG / RF IN
7-9
VD / RF OUT
Source / Ground
Backside
The TGF2955 typically provides 46.4 dBm of saturated
output power with power gain of 19.2 dB at 3 GHz. The
maximum power added efficiency is 69.0 % which makes
the TGF2955 appropriate for high efficiency applications.
Ordering Information
Part ECCN
TGF2955
Lead-free and RoHS compliant.
Description
3A001b.3.b 40 Watt GaN HEMT
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 1 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Value
100 V
Parameter
Drain Voltage Range (VD)
Value
32 V
Drain to Gate Voltage (VDG
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
)
40 V
Drain Quiescent Current (IDQ
)
150 mA
-10 to 0 V
4.5 A
Drain Current Under RF Drive ( ID)(1)
2.5 A
Pinch-off Gate Voltage (VG)
−3.5 V (Typ.)
225°C (Max.)
Gate Current (IG)
-7.6 to 12.6 mA
41 W
Channel Temperature (TCH
)
CW Power Dissipation (PD)
(1) 10% pulses at 3GHz, Power Tuned
CW Input Power (PIN) @ 10GHz
39 dBm
275°C
Channel Temperature (TCH
)
Mounting Temperature (30 Sec.)
Storage Temperature
320°C
−65 to 150°C
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 2 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
RF Characterization – Model Optimum Power Tune
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes.
Parameter
Frequency (F)
Typical Value
6
Units
GHz
V
1
3
10
15
32
Drain Voltage (VD)
32
32
32
32
Bias Current (IDQ
Output P3dB (P3dB
PAE @ P3dB (PAE3dB
Gain @ P3dB (G3dB
)
150
46.3
64.7
26.7
150
46.4
63.2
19.2
150
46.3
58.9
14.3
150
46.3
53.5
10.7
150
46.0
45.4
7.8
mA
)
dBm
%
)
)
dB
Parallel Output Resistance (1)
(Rp)
95.2
96.1
86.9
68.5
45.7
Ω∙mm
Parallel Output Capacitance (1)
(Cp)
-0.023
0.123
0.206
0.234
0.224
pF/mm
Load Impedance (ZL)
Source Impedance (ZS)
Notes:
12.6-j0.17
1.64+j12.3
12.1+j2.70
0.74+j4.08
7.89+j5.33
0.70+j1.66
4.51+j4.53
0.62+j0.39
3.13+j3.02
0.55-j0.55
Ω
Ω
1. Large signal equivalent output network (normalized).
RF Characterization – Model Optimum Efficiency Tune
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes.
Typical Value
6
Units
GHz
V
Parameter
Frequency (F)
1
3
10
15
32
Drain Voltage (VD)
32
32
32
32
Bias Current (IDQ
Output P3dB (P3dB
PAE @ P3dB (PAE3dB
Gain @ P3dB (G3dB
)
150
45.1
70.5
27.9
150
45.1
69.0
20.7
150
44.9
63.9
15.2
150
45.7
56.4
11.1
150
45.8
46.8
8.1
mA
)
dBm
%
)
)
dB
Parallel Output Resistance (1)
(Rp)
160.0
0.292
154.3
0.276
142.6
0.277
88.6
49.5
Ω∙mm
Parallel Output Capacitance (1)
(Cp)
0.269
0.252
pF/mm
Load Impedance (ZL)
Source Impedance (ZS)
Notes:
19.5+j5.70
1.64+j12.3
12.4+j9.97
0.74+j4.08
5.85+j8.73
0.70+j1.66
3.61+j5.41
0.62+j0.39
2.75+j3.23
0.55-j0.55
Ω
Ω
1. Large signal equivalent output network (normalized).
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 3 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Thermal and Reliability Information - Pulsed (1)
Parameter
Test Conditions
Value
2.56
Units
ºC/W
°C
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
PD = 30.2 W, Tbaseplate = 85°C
Pulse: 100uS, 5%
162
6.57E08
2.70
Hrs
°C/W
°C
PD = 30.2 W, Tbaseplate = 85°C
Pulse: 100uS, 10%
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Notes:
167
4.11E8
2.95
Hrs
ºC/W
°C
PD = 30.2 W, Tbaseplate = 85°C
Pulse: 100uS, 20%
174
1.87E8
3.81
Hrs
ºC/W
°C
PD = 30.2 W, Tbaseplate = 85°C
Pulse: 100uS, 50%
200
1.54E7
Hrs
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.
Thermal and Reliability Information - CW (1)
Parameter
Test Conditions
Value
4.37
Units
ºC/W
°C
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
PD = 7.56 W, Tbaseplate = 85°C
CW
118
1.25E11
4.70
Hrs
°C/W
°C
PD = 15.1W, Tbaseplate = 85°C
CW
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Notes:
156
1.27E9
5.07
Hrs
ºC/W
°C
PD = 22.7 W, Tbaseplate = 85°C
CW
200
1.54E7
5.53
Hrs
ºC/W
°C
PD = 30.2 W, Tbaseplate = 85°C
CW
252
2.22E5
Hrs
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 4 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Median LifeTime
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
25
50
75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 5 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Maximum Channel Temperature - Pulsed
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 6 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Maximum Channel Temperature - CW
Peak Temperature vs. Pdiss (W) for Fixed 85 C on CuMo Carrier Plate
320
300
280
260
240
220
200
180
160
140
120
100
80
Carrier Plate held at 85C
Recommended Operating Limit
6.00
10.00
14.00
18.00
22.00
26.00
30.00
34.00
38.00
CW Power Dissipation, W
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 7 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Model Maximum Gain Performance
Bondwires not included. See page 17 for reference planes.
Maximum Gain vs. Frequency
35
30
25
20
15
10
5
Vd = 12V, Idq = 150mA
Vd = 12V, Idq = 375mA
Vd = 32V, Idq = 150mA
Vd = 32V, Idq = 375mA
0
0
5
10
15
20
25
30
Frequency [GHz]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 8 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 150mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
1GHz, Load-pull
Max Power is 46.3dBm
at Z = 12.625-0.168i
•
Ω
Zs(fo) = 1.64+12.34i
Zs(2fo) = 12
= 0.1161-0.0065i
Max Gain is 33.2dB
•
Ω
Γ
Ω
Zs(3fo) = 12
Ω
Zl(2fo) = 10
at Z = 7.713+10.532i
= 0.1658+0.496i
Ω
Ω
Ω
Γ
Zl(3fo) = 10
Max PAE is 70.5%
at Z = 19.515+5.699i
Ω
•
33.1
32.6
= 0.3467+0.1261i
Γ
32.1
68.3
63.3
58.3
46.2
46
45.8
Power
Gain
PAE
Zo = 10
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 9 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 150mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
3GHz, Load-pull
Max Power is 46.4dBm
•
at Z = 12.053+2.704i
= 0.1065+0.1095i
Ω
Zs(fo) = 0.74+4.08i
Zs(2fo) = 4.3
Ω
Γ
Max Gain is 23.9dB
•
Ω
Zs(3fo) = 4.3
Ω
Zl(2fo) = 10
at Z = 4.996+9.254i
= 0.0342+0.596i
Ω
Ω
Γ
Zl(3fo) = 10
Max PAE is 69%
at Z = 12.443+9.972i
Ω
•
Ω
= 0.2558+0.3307i
Γ
23.6
23.1
22.6
68.1
63.1
58.1
46.3
46.1
45.9
Power
Gain
PAE
Zo = 10
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 10 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 150mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
6GHz, Load-pull
Max Power is 46.3dBm
at Z = 7.885+5.329i
•
Ω
Zs(fo) = 0.7+1.66i
Zs(2fo) = 1.6
Zs(3fo) = 1.6
= 0.1663+0.2985i
Max Gain is 15.8dB
•
Ω
Γ
Ω
at Z = 2.54+9.038i
Ω
Ω
Zl(2fo) = 7
Ω
Zl(3fo) = 7
= 0.2266+0.7327i
Max PAE is 63.9%
Γ
•
Ω
at Z = 5.849+8.734i
= 0.2548+0.5066i
Ω
Γ
15.3
14.8
14.3
59.1
54.1
49.1
46.1
45.9
45.7
Power
Gain
PAE
Zo = 7
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 11 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 150mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
10GHz, Load-pull
Max Power is 46.3dBm
at Z = 4.513+4.533i
•
Ω
Zs(fo) = 0.62+0.39i
Zs(2fo) = 1.6
Zs(3fo) = 1.6
= -0.0528+0.4146i
Max Gain is 11.4dB
Ω
Γ
•
Ω
at Z = 2.335+7.027i
= 0.0427+0.7206i
Ω
Ω
Zl(2fo) = 7
Ω
Zl(3fo) = 7
Γ
Max PAE is 56.4%
•
Ω
at Z = 3.605+5.406i
Ω
= -0.0478+0.5342i
Γ
10.9
10.4
55.4
9.86
50.4
45.4
46.2
46
45.8
Power
Gain
PAE
Zo = 7
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 12 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 150mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
15GHz, Load-pull
Max Power is 46dBm
at Z = 3.133+3.022i
•
Ω
Zs(fo) = 0.55-0.55i
Zs(2fo) = 1.6
Zs(3fo) = 1.6
= -0.2688+0.3784i
Max Gain is 9.5dB
Ω
Γ
•
Ω
at Z = 1.561+4.8i
Ω
Ω
Zl(2fo) = 7
Ω
Zl(3fo) = 7
= -0.2442+0.6976i
Max PAE is 46.8%
Γ
•
Ω
at Z = 2.753+3.232i
= -0.2934+0.4287i
Ω
Γ
0
.
5
9.43
8.93
8.43
45.4
45.6
42.6
45.8
37.6
32.6
Power
Gain
PAE
Zo = 7
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 13 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Model Power Tuned Data
Bond wires not included. See page 17 for reference planes.
TGF2955 Gain and PAE vs. Output Power
1GHz, Vds =32V, Idq =150mA, 100uS, 10%, Power Tuned
TGF2955 Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =150mA, 100uS, 10%, Power Tuned
35
34
33
32
31
30
29
28
27
26
25
70
27
26
25
24
23
22
21
20
19
18
17
65
60
55
50
45
40
35
30
25
20
15
64
58
52
46
40
34
28
22
16
10
Zs = 1.64+j12.3
Zl = 12.6-j0.17
Ω
Zs = 0.74+j4.08Ω
Zl = 12.1+j2.70
Ω
Ω
Gain
PAE
Gain
PAE
34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
TGF2955 Gain and PAE vs. Output Power
6GHz, Vds =32V, Idq =150mA, 100uS, 10%, Power Tuned
TGF2955 Gain and PAE vs. Output Power
10GHz, Vds =32V, Idq =150mA, 100uS, 10%, Power Tuned
22
60
55
50
45
40
35
30
25
20
15
10
18
60
55
50
45
40
35
30
25
20
15
10
21
20
19
18
17
16
15
14
13
12
17
16
15
14
13
12
11
10
9
Zs = 0.62+j0.39
Zl = 4.51+j4.53
Ω
Zs = 0.70+j1.66Ω
Zl = 7.89+j5.33Ω
Ω
Gain
PAE
Gain
PAE
8
34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
TGF2955 Gain and PAE vs. Output Power
15GHz, Vds =32V, Idq =150mA, 100uS, 10%, Power Tuned
15
14
13
12
11
10
9
60
55
50
45
40
35
30
25
20
15
10
Zs = 0.55-j0.55
Zl = 3.13+j3.02
Ω
Ω
Gain
PAE
8
7
6
5
34 35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power [dBm]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 14 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Model Efficiency Tuned Data
Bond wires not included. See page 17 for reference planes.
TGF2955 Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =150mA, 100uS, 10%, Efficiency Tuned
TGF2955 Gain and PAE vs. Output Power
1GHz, Vds =32V, Idq =150mA, 100uS, 10%, Efficiency Tuned
35
34
33
32
31
30
29
28
27
26
25
75
70
65
60
55
50
45
40
35
30
25
28
27
26
25
24
23
22
21
20
19
18
70
65
60
55
50
45
40
35
30
25
20
Zs = 0.74+j4.08
Ω
Zl = 12.4+j9.97
Ω
Zs = 1.64+j12.3
Zl = 19.5+j5.70
Ω
Ω
Gain
PAE
Gain
PAE
36
37
38
39
40
Output Power [dBm]
41
42
43
44
45
46
36
37
38
39
40
41
42
Output Power [dBm]
43
44
45
46
TGF2955 Gain and PAE vs. Output Power
6GHz, Vds =32V, Idq =150mA, 100uS, 10%, Efficiency Tuned
TGF2955 Gain and PAE vs. Output Power
10GHz, Vds =32V, Idq =150mA, 100uS, 10%, Efficiency Tuned
23
22
21
20
19
18
17
16
15
14
13
70
65
60
55
50
45
40
35
30
25
20
19
18
17
16
15
14
13
12
11
10
9
60
55
50
45
40
35
30
25
20
15
10
Zs = 0.70+j1.66
Ω
Zl = 5.85+j8.73
Ω
Zs = 0.62+j0.39
Zl = 3.61+j5.41
Ω
Ω
Gain
PAE
Gain
PAE
36
37
38
39
40
41
42
Output Power [dBm]
43
44
45
46
36
37
38
39
40
41
Output Power [dBm]
42
43
44
45
46
TGF2955 Gain and PAE vs. Output Power
15GHz, Vds =32V, Idq =150mA, 100uS, 10%, Efficiency Tuned
16
15
14
13
12
11
10
9
55
50
45
40
35
30
25
20
15
10
5
Zs = 0.55-j0.55
Ω
Zl = 2.75+j3.23
Ω
Gain
PAE
8
7
6
36
37
38
39
40
41
42
Output Power [dBm]
43
44
45
46
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 15 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Mechanical Drawing
Bond Pads
Pad No.
Description Dimensions
1, 2, 3, 4, 5, 6
Gate
0.125 x 0.125
0.150 x 0.546
1.007 x 2.305
7, 8, 9
Drain
Source /
Ground
Die Backside
1. Units: millimeters
2. Thickness: 0.100 mm
3. Die xy size tolerance: 0.050 mm
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 16 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Reference Planes
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 17 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Model
A model is available for download from Modelithics (at http://www.modelithics.com/mvp/Triquint&tab=3) by approved
TriQuint customers. The model is compatible with the industry’s most popular design software including Agilent ADS
and National Instruments/AWR applications. Once on the Modelithics web page, the user will need to register for a free
license before being granted the download.
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) not recommended.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.
• Force, time, and ultrasonics are critical bonding parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Disclaimer
GaN/SiC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
Bias-up Procedure
Bias-down Procedure
1. VG set to -5 V.
2. VD set to 32 V.
3. Adjust VG more positive until quiescent ID is 150 mA.
4. Apply RF signal.
1. Turn off RF signal.
2. Turn off VD and wait 1 second to allow drain
capacitor dissipation.
3. Turn off VG.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 18 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2955
40 Watt Discrete Power GaN on SiC HEMT
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with gold/tin (320°C maximum reflow
temperature) soldering processes.
Caution! ESD-Sensitive Device
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: TBD
Value:
Test:
TBD
TBD
Standard: TBD
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information
is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain
and verify the latest relevant information before placing orders for TriQuint products. The information contained herein
or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 19 of 19 -
© 2014 TriQuint
www.triquint.com
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