TGF2952_15 [TRIQUINT]
7 Watt Discrete Power GaN on SiC HEMT;
| 型号： | TGF2952_15 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 7 Watt Discrete Power GaN on SiC HEMT |
| 文件： | 总22页 (文件大小：1767K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Applications
• Marine radar
• Satellite communications
• Point to point communications
• Military communications
• Broadband amplifiers
• High efficiency amplifiers
Product Features
Functional Block Diagram
• Frequency Range: DC - 14 GHz
• 38.4 dBm Nominal PSAT at 3 GHz
• 75.7% Maximum PAE at 3 GHz
• 20.4 dB Nominal Power Gain at 3 GHz
• Bias: VD = 32 V, IDQ = 25 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 1.01 x 0.82 x 0.10 mm
General Description
Pad Configuration
The TriQuint TGF2952 is a discrete 1.25 mm GaN on
SiC HEMT which operates from DC-14 GHz. The
TGF2952 is designed using TriQuint’s proven TQGaN25
production process. This process features advanced
field plate techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
Pad No.
1
Symbol
VG / RF IN
2
VD / RF OUT
Source / Ground
Backside
The TGF2952 typically provides 38.4 dBm of saturated
output power with power gain of 20.4 dB at 3 GHz. The
maximum power added efficiency is 75.7 % which makes
the TGF2952 appropriate for high efficiency applications.
Ordering Information
Part ECCN
Lead-free and RoHS compliant.
Description
7 Watt GaN HEMT
TGF2952
EAR99
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 1 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain to Gate Voltage (VDG
Value
100 V
Parameter
Drain Voltage Range (VD)
Value
32 V
)
Drain Voltage (VD)
40 V
Drain Quiescent Current (IDQ
)
25 mA
Gate Voltage Range (VG)
Drain Current (ID)
-10 to 0 V
0.75 A
Drain Current Under RF Drive ( ID)(1)
480 mA
Pinch-off Gate Voltage (VG)
−2.7 V (Typ.)
225°C (Max.)
Gate Current (IG)
-1.25 to 2.1 mA
10.5 W
Channel Temperature (TCH
)
Power Dissipation (PD)
CW Input Power (PIN)
Channel Temperature (TCH
(1) 100uS PW, 10% pulses at 3GHz, Power Tuned
33 dBm
)
275°C
Mounting Temperature (30 Sec.)
Storage Temperature
320°C
−65 to 150°C
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 2 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
RF Characterization – Model Optimum Power Tune
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 19 for reference planes.
Parameter
Frequency (F)
Typical Value
6
Units
GHz
V
1
3
10
32
15
32
Drain Voltage (VD)
32
32
32
Bias Current (IDQ
Output P3dB (P3dB
PAE @ P3dB (PAE3dB
Gain @ P3dB (G3dB
)
25
25
25
25
25
mA
)
38.4
64.9
26.8
38.6
62.3
20.4
38.5
59.4
15.3
38.4
54.0
11.4
38.2
47.3
8.5
dBm
%
)
)
dB
Parallel Output Resistance (1)
(Rp)
94.3
95.2
85.9
70.1
49.8
Ω∙mm
Parallel Output Capacitance (1)
(Cp)
-0.018
0.125
0.199
0.205
0.223
pF/mm
Load Impedance (ZL)
Source Impedance (ZS)
Notes:
75.3-j2.84
11.6+j76.0
72.5+j16.3
4.02+j23.2
48.5+j31.3
3.80+j12.2
30.8+j27.9
4.06+j4.51
19.0+j19.9
3.97-j0.22
Ω
Ω
1. Large signal equivalent output network (normalized).
RF Characterization – Model Optimum Efficiency Tune
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 19 for reference planes.
Typical Value
6
Units
GHz
V
Parameter
Frequency (F)
1
3
10
32
15
32
Drain Voltage (VD)
32
32
32
Bias Current (IDQ
Output P3dB (P3dB
PAE @ P3dB (PAE3dB
Gain @ P3dB (G3dB
)
25
25
25
25
25
mA
)
36.7
70.3
28.1
37.3
67.5
21.9
37.4
63.9
16.0
37.6
57.7
11.9
37.9
48.9
8.7
dBm
%
)
)
dB
Parallel Output Resistance (1)
(Rp)
168.4
0.249
149.3
0.267
134.0
0.273
93.4
52.5
Ω∙mm
Parallel Output Capacitance (1)
(Cp)
0.276
0.267
pF/mm
Load Impedance (ZL)
Source Impedance (ZS)
Notes:
126+j33.2
11.6+j76.0
76.3+j57.4
4.02+j23.2
36.8+j50.9
3.80+j12.2
20.6+j33.4
4.06+j4.51
15.3+j20.2
3.97-j0.22
Ω
Ω
1. Large signal equivalent output network (normalized).
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 3 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
RF Characterization – Measured Optimum Power Tune
Measured conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 19 for reference planes.
Parameter
Frequency (F)
Typical Value
Units
GHz
V
3
32
6
32
Drain Voltage (VD)
Bias Current (IDQ
Input Power
Output Power
PAE
)
25
25
mA
dBm
dBm
%
18
23
38.4
38.3
66.7
61.9
Gain
20.4
15.3
dB
Load Impedance (ZL)
53.6+j33.3
10.1+j23.6
36.1+j32.0
9.43+j12.0
Ω
Source Impedance (ZS)
Ω
RF Characterization – Measured Optimum Efficiency Tune
Measured conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 19 for reference planes.
Typical Value
Units
GHz
V
Parameter
Frequency (F)
3
32
6
32
Drain Voltage (VD)
Bias Current (IDQ
Input Power
Output Power
PAE
)
25
25
mA
dBm
dBm
%
18
23
37.8
37.7
75.7
72.0
Gain
19.8
14.7
dB
Load Impedance (ZL)
85.6+j54.8
10.1+j23.6
29.5+j50.7
9.43+j12.0
Ω
Source Impedance (ZS)
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 4 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Thermal and Reliability Information - Pulsed (1)
Parameter
Test Conditions
Value
15.1
Units
ºC/W
°C
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
PD = 7.5 W, Tbaseplate = 85°C
Pulse: 100uS, 5%
199
1.78E07
15.5
Hrs
°C/W
°C
PD = 7.5 W, Tbaseplate = 85°C
Pulse: 100uS, 10%
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Notes:
201
1.41E07
16.0
Hrs
ºC/W
°C
PD = 7.5 W, Tbaseplate = 85°C
Pulse: 100uS, 20%
205
9.85E06
17.8
Hrs
ºC/W
°C
PD = 7.5 W, Tbaseplate = 85°C
Pulse: 100uS, 50%
219
3.15E06
Hrs
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.
Thermal and Reliability Information - CW (1)
Parameter
Test Conditions
Value
18.0
Units
ºC/W
°C
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
PD = 3.78 W, Tbaseplate = 85°C
CW
153
1.75E09
18.8
Hrs
°C/W
°C
PD = 5.04 W, Tbaseplate = 85°C
CW
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Notes:
180
1.04E08
20
Hrs
ºC/W
°C
PD = 6.30 W, Tbaseplate = 85°C
CW
211
5.99E06
21.2
Hrs
ºC/W
°C
PD = 7.56 W, Tbaseplate = 85°C
CW
245
3.79E05
Hrs
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 5 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Median LifeTime
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
25
50
75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 6 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Maximum Channel Temperature - Pulsed
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 7 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Maximum Channel Temperature - CW
Peak Temperature vs. Pdiss (W) for Fixed 85°C on CuMo Carrier Plate
300
280
260
240
220
200
180
160
140
120
100
80
Carrier Plate held at 85C
Recommended Operating Limit
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
CW Power Dissipation, W
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 8 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Model Maximum Gain Performance
Bond wires are not included. See page 19 for reference planes.
Maximum Gain vs. Frequency
35
30
25
20
15
10
5
Vd = 12V, Idq = 25mA
Vd = 12V, Idq = 62.5mA
Vd = 32V, Idq = 25mA
Vd = 32V, Idq = 62.5mA
0
5
10
15
20
25
30
Frequency [GHz]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 9 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Measured Maximum Gain Performance
Bond wires are not included. See page 19 for reference planes.
Maximum Gain vs. Frequency
35
30
25
20
15
10
5
Vd = 32V, Idq = 25mA
0
5
10
15
20
25
30
Frequency [GHz]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 10 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 25mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.
3dB compression performance referenced to large-signal peak gain.
1GHz, Load-pull
Max Power is 38.4dBm
at Z = 75.328-2.843i
•
Ω
Zs(fo) = 11.57+75.96i
Zs(2fo) = 50
= 0.2025-0.0181i
Max Gain is 36.5dB
Ω
Γ
Ω
•
at Z = 22.789+59.357i
Zs(3fo) = 50
Ω
Zl(2fo) = 50
Ω
= 0.1749+0.6729i
Max PAE is 70.3%
Ω
Γ
Zl(3fo) = 50
Ω
•
at Z = 125.971+33.196i
= 0.4513+0.1035i
Ω
Γ
36.1
35.6
35.1
3
68.1
63.1
58.1
38.3
38.1
37.9
Power
Gain
PAE
Zo = 50
Ω
Datasheet: Rev A 10-20-14
© 2014 TriQuint
Disclaimer: Subject to change without notice
- 11 of 22 -
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 25mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.
3dB compression performance referenced to large-signal peak gain.
3GHz, Load-pull
Max Power is 38.6dBm
at Z = 72.504+16.349i
•
Ω
Zs(fo) = 4.02+23.21i
Zs(2fo) = 50
= 0.198+0.107i
Max Gain is 26.1dB
•
Ω
Γ
Ω
Zs(3fo) = 50
Ω
Zl(2fo) = 50
at Z = 20.868+59.545i
= 0.1729+0.695i
Ω
Ω
Γ
25.8
Zl(3fo) = 50
Max PAE is 67.5%
at Z = 76.328+57.36i
Ω
•
Ω
25.3
24.8
= 0.3437+0.298i
Γ
65.9
38.6
60.9
55.9
38.4
38.2
Power
Gain
PAE
Zo = 50
Ω
Datasheet: Rev A 10-20-14
© 2014 TriQuint
Disclaimer: Subject to change without notice
- 12 of 22 -
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 25mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.
3dB compression performance referenced to large-signal peak gain.
6GHz, Load-pull
Max Power is 38.5dBm
at Z = 48.472+31.339i
•
Ω
Zs(fo) = 3.8+12.24i
Zs(2fo) = 50
= 0.0779+0.2935i
Max Gain is 16.9dB
•
Ω
Γ
Ω
Zs(3fo) = 50
Ω
Zl(2fo) = 50
at Z = 16.611+44.172i
= -0.0427+0.6915i
Ω
Ω
Ω
Γ
Zl(3fo) = 50
Max PAE is 63.9%
at Z = 36.842+50.934i
Ω
•
= 0.1432+0.5025i
Γ
16.7
16.2
15.7
59.1
54.1
49.1
38.5
38.3
38.1
Power
Gain
PAE
Zo = 50
Ω
Datasheet: Rev A 10-20-14
© 2014 TriQuint
Disclaimer: Subject to change without notice
- 13 of 22 -
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 25mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.
3dB compression performance referenced to large-signal peak gain.
10GHz, Load-pull
Max Power is 38.4dBm
at Z = 30.799+27.931i
•
Ω
Zs(fo) = 4.06+4.51i
Zs(2fo) = 50
= -0.1055+0.3822i
Max Gain is 12dB
at Z = 15.356+37.06i
Ω
Γ
Ω
•
Zs(3fo) = 50
Ω
Zl(2fo) = 50
Ω
= -0.1578+0.6565i
Max PAE is 57.7%
Ω
Γ
•
Zl(3fo) = 50
Ω
at Z = 20.587+33.379i
Ω
0
.
= -0.1578+0.5475i
Γ
5
11.5
57.1
11
52.1
10.5
47.1
38.2
38
37.8
Power
Gain
PAE
Zo = 50
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 14 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 25mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.
3dB compression performance referenced to large-signal peak gain.
15GHz, Load-pull
Max Power is 38.2dBm
at Z = 19.012+19.91i
•
Ω
Zs(fo) = 3.97-0.22i
Zs(2fo) = 50
= -0.3377+0.3859i
Max Gain is 9.1dB
Ω
Γ
•
Ω
Zs(3fo) = 50
Ω
Zl(2fo) = 50
at Z = 10.207+26.965i
= -0.3834+0.6196i
Ω
Ω
Ω
Γ
Zl(3fo) = 50
Max PAE is 48.9%
at Z = 15.338+20.158i
Ω
•
= -0.3975+0.4312i
Γ
0
.
5
9.13
8.63
42.5
8.13
47.5
37.5
38 37.8
37.6
Power
Gain
PAE
Zo = 50
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 15 of 22 -
© 2014 TriQuint
www.triquint.com
Zs = 3.80+j12.2Ω
Zl = 48.5+j31.3Ω
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Model Power Tuned Data
Bond wires not included. See page 19 for reference planes.
TGF2952 Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =25mA, 100uS, 10%, Power Tuned
TGF2952 Gain and PAE vs. Output Power
1GHz, Vds =32V, Idq =25mA, 100uS, 10%, Power Tuned
35
34
33
32
31
30
29
28
27
26
25
70
29
28
27
26
25
24
23
22
21
20
19
65
60
55
50
45
40
35
30
25
20
15
64
58
52
46
40
34
28
22
16
10
Zs = 11.6+j76.0
Zl = 75.3-j2.84
Zs = 4.02+j23.2
Zl = 72.5+j16.3
Ω
Ω
Ω
Ω
Gain
PAE
Gain
PAE
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
TGF2952 Gain and PAE vs. Output Power
6GHz, Vds =32V, Idq =25mA, 100uS, 10%, Power Tuned
TGF2952 Gain and PAE vs. Output Power
10GHz, Vds =32V, Idq =25mA, 100uS, 10%, Power Tuned
24
65
60
55
50
45
40
35
30
25
20
15
20
65
60
55
50
45
40
35
30
25
20
15
23
22
21
20
19
18
17
16
15
14
19
18
17
16
15
14
13
12
11
10
Zs = 4.06+j4.51Ω
Zl = 30.8+j27.9Ω
Gain
PAE
Gain
PAE
28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
TGF2952 Gain and PAE vs. Output Power
15GHz, Vds =32V, Idq =25mA, 100uS, 10%, Power Tuned
16
15
14
60
55
50
45
40
35
30
25
20
15
10
13 Zs = 3.97-j0.22
Zl = 19.0+j19.9
12
Ω
Ω
11
10
9
Gain
PAE
8
7
6
28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 16 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Model Efficiency Tuned Data
Bond wires not included. See page 19 for reference planes.
TGF2952 Gain and PAE vs. Output Power
1GHz, Vds =32V, Idq =25mA, 100uS, 10%, Efficiency Tuned
TGF2952 Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =25mA, 100uS, 10%, Efficiency Tuned
37
36
35
34
33
32
31
30
29
28
27
80
31
30
29
28
27
26
25
24
23
22
21
70
65
60
55
50
45
40
35
30
25
20
72
64
56
48
40
32
24
16
8
Zs = 11.6+j76.0
Zl = 126+j33.2
Ω
Zs = 4.02+j23.2Ω
Zl = 76.3+j57.4
Ω
Ω
Gain
PAE
Gain
PAE
0
24 25 26 27 28 29 30 31 32 33 34 35 36 37
Output Power [dBm]
27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
TGF2952 Gain and PAE vs. Output Power
6GHz, Vds =32V, Idq =25mA, 100uS, 10%, Efficiency Tuned
TGF2952 Gain and PAE vs. Output Power
10GHz, Vds =32V, Idq =25mA, 100uS, 10%, Efficiency Tuned
25
65
60
55
50
45
40
35
30
25
20
15
20
60
55
50
45
40
35
30
25
20
15
10
24
23
22
21
20
19
18
17
16
15
19
18
17
16
15
14
13
12
11
10
Zs = 4.06+j4.51
Zl = 20.6+j33.4
Ω
Ω
Zs = 3.80+j12.2Ω
Zl = 36.8+j50.9
Ω
Gain
PAE
Gain
PAE
27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
TGF2952 Gain and PAE vs. Output Power
15GHz, Vds =32V, Idq =25mA, 100uS, 10%, Efficiency Tuned
17
16
15
14
13
12
11
10
9
60
55
50
45
40
35
30
25
20
15
10
Zs = 3.97-j0.22
Ω
Zl = 15.3+j20.2Ω
Gain
PAE
8
7
27 28 29 30 31 32 33 34 35 36 37 38
Output Power [dBm]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 17 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Measured Power Tuned Data
Bond wires not included. See page 19 for reference planes.
3GHz, 32V, 25mA, 100uS PW, 10%, Power Tuned
75
70
65
60
55
50
45
40
35
30
25
28
s = 0.717 128
°
Γ
∠
27
26
25
24
23
22
21
20
19
18
s2 = 0.673 33
°
Γ
∠
s3 = 0.548 62
°
Γ
∠
l = 0.306 58
°
Γ
∠
l2 = 0.251 -112
°
Γ
∠
l3 = 0.034 -164
°
Γ
∠
Zo = 50
Ω
29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
6GHz, 32V, 25mA, 100uS PW, 10%, Power Tuned
70
22
64
58
52
46
40
34
28
22
16
10
21
20
19
18
17 s = 0.698 152
Γ
Γ
Γ
Γ
Γ
Γ
∠
°
s2 = 0.765 110
s3 = 0
l = 0.515 88
∠
°
16
15
14
13
12
∠
°
l2 = 0.558 -67
∠
°
l3 = 0
Zo = 50
Ω
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
Output Power [dBm]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 18 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Mechanical Drawing
Bond Pads
Pad No.
Description Dimensions
1
Gate
0.125 x 0.125
0.150 x 0.246
1.007 x 0.821
2
Drain
Source /
Ground
Die Backside
1. Units: millimeters
2. Thickness: 0.100 mm
3. Die xy size tolerance: 0.050 mm
Reference Planes
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 19 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Model
A model is available for download from Modelithics (at http://www.modelithics.com/mvp/Triquint&tab=3) by approved
TriQuint customers. The model is compatible with the industry’s most popular design software including Agilent ADS
and National Instruments/AWR applications. Once on the Modelithics web page, the user will need to register for a free
license before being granted the download.
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) not recommended.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.
• Force, time, and ultrasonics are critical bonding parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 20 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Disclaimer
GaN/SiC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
Bias-up Procedure
Bias-down Procedure
1. VG set to -5 V.
2. VD set to 32 V.
3. Adjust VG more positive until quiescent ID is 25 mA.
4. Apply RF signal.
1. Turn off RF signal.
2. Turn off VD and wait 1 second to allow drain
capacitor dissipation.
3. Turn off VG.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 21 of 22 -
© 2014 TriQuint
www.triquint.com
TGF2952
7 Watt Discrete Power GaN on SiC HEMT
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with gold/tin (320°C maximum reflow
temperature) soldering processes.
Caution! ESD-Sensitive Device
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: TBD
Value:
Test:
TBD
TBD
Standard: TBD
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such
information is entirely with the user. All information contained herein is subject to change without notice. Customers
should obtain and verify the latest relevant information before placing orders for TriQuint products. The information
contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights,
licenses, or any other intellectual property rights, whether with regard to such information itself or anything described
by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 22 of 22 -
© 2014 TriQuint
www.triquint.com
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