TS13002HVCTB0G [TSC]

High Voltage NPN Transistor;
TS13002HVCTB0G
型号: TS13002HVCTB0G
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

High Voltage NPN Transistor

文件: 总6页 (文件大小:654K)
中文:  中文翻译
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TS13002HV  
High Voltage NPN Transistor  
TO-92  
Pin Definition:  
1. Emitter  
PRODUCT SUMMARY  
BVCEO  
BVCBO  
IC  
450V  
2. Collector  
3. Base  
900V  
0.8A  
VCE(SAT)  
0.6V @ IC=0.2A, IB=0.04A  
Features  
Block Diagram  
High Voltage  
High Speed Switching  
Structure  
Silicon Triple Diffused Type  
NPN Silicon Transistor  
Ordering Information  
Part No.  
Package  
TO-92  
Packing  
1kpcs / Bulk  
2kpcs / Ammo  
TS13002HVCT B0G  
TS13002HVCT A3G  
TO-92  
Note: “G” denote for Halogen Free Product  
Absolute Maximum Ratings (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
900  
V
V
V
450  
9
0.8  
DC  
Collector Current  
IC  
A
Pulse  
1.6  
Maximum Power Dissipation @ TC = 25oC  
Operating Junction Temperature  
Ptot  
TJ  
0.8  
W
oC  
oC  
+150  
- 55 to +150  
Operating Junction and Storage Temperature Range  
TSTG  
Thermal Performance  
Parameter  
Symbol  
Limit  
Unit  
oC/W  
Junction to Ambient Thermal Resistance  
RӨJA  
125  
1/6  
Version: A14  
TS13002HV  
High Voltage NPN Transistor  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Collector-Base Voltage  
IC =1mA, IB =0  
BVCBO  
BVCEO  
BVEBO  
ICBO  
900  
450  
9
--  
--  
--  
--  
V
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
Collector-Emitter Cutoff Current  
Emitter-Base Cutoff Current  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
IC =10mA, IE =0  
IE =1mA, IC =0  
--  
--  
V
VCB =900V, IE =0  
VCE =450V, IC = 0  
VEB =9V, IC = 0  
--  
--  
100  
100  
100  
0.6  
1.5  
--  
µA  
µA  
µA  
V
ICEO  
--  
--  
IEBO  
--  
--  
IC=0.2A, IB=0.04A  
IC=0.2A, IB=0.04A  
VCE =5V, IC =5mA  
VCE =5V, IC =100mA  
VCE =5V, IC =300mA  
VCE(SAT)  
VBE(SAT)  
--  
0.2  
0.9  
--  
V
15  
25  
20  
DC Current Gain  
hFE  
--  
40  
40  
--  
Dynamic Characteristics  
Frequency  
VCE =10V, IC =0.1A  
fT  
5
--  
--  
MHz  
Resistive Load Switching Time (Ratings)  
Rise Time  
Storage Time  
Fall Time  
tr  
tSTG  
tf  
--  
--  
--  
--  
2
1
5
1
µs  
µs  
µs  
VCC =125V, IC =0.1A  
IB1=IB2=20mA  
tp=25µs, D=1%  
--  
Note: pulse test: pulse width 300µs, duty cycle 2%  
2/6  
Version: A14  
TS13002HV  
High Voltage NPN Transistor  
Electrical Characteristics Curves (Ta = 25oC, unless otherwise noted)  
Figure 1. Safe Operation Area  
Figure 2. DC Current Gain  
Figure 3. Vce(sat) vs. IC  
Figure 4. Vbe(sat) vs. IC  
Figure 5. Power Derating  
3/6  
Version: A14  
TS13002HV  
High Voltage NPN Transistor  
TO-92 Mechanical Drawing  
Unit: Millimeters  
Marking Diagram  
Y = Year Code  
M = Month Code for Halogen Free Product  
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,  
X=Oct, Y=Nov, Z=Dec)  
L = Lot Code  
4/6  
Version: A14  
TS13002HV  
High Voltage NPN Transistor  
TO-92 Ammo Pack Mechanical Drawing  
Tape Dimension  
Item Description  
Symbol  
Dimension  
Base of Package to Lead Bend  
Component Height  
b
Ha  
H0  
H1  
H2  
Pd  
Hd  
P0  
P1  
F1  
d
3.0 (typ.)  
23.57 (typ.)  
16.0 ±0.5  
19.0 ±0.5  
8.0 (max)  
1.02 (max)  
0.79 (max)  
12.7 ±0.3  
6.25 ±0.4  
2.5 ±0.3  
Lead Clinch Height  
Component Base Height  
Component Top to Lead Bend  
Component Alignment (side / side)  
Component Alignment (front / back)  
Feed Hole Pitch  
Hole Center to Component Center  
Lead Spread  
Lead Thickness  
0.46 (typ.)  
10.9 (max)  
5.31 (typ.)  
0.81 ±0.2  
0.5 ±0.2  
Cut Lead Length  
L
Taped Lead Length  
L1  
t
Taped Lead Thickness  
Carrier Tape Thickness  
Carrier Tape Width  
t1  
W
18.0 ±0.5  
0.5 ±0.2  
Hold – down Tape Width  
Hold – down Tape position  
Feed Hole Position  
W0  
W1  
W2  
D0  
S
9.0 ±0.7  
6.0 ±0.2  
Sprocket Hole Diameter  
Lead Spring Out  
4.0 ±0.2  
0.1 (max)  
Note: All dimensions are in millimeter.  
5/6  
Version: A14  
TS13002HV  
High Voltage NPN Transistor  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
6/6  
Version: A14  

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