TSM028N04PQ56RLG [TSC]
40V N-Channel MOSFET;
| 型号： | TSM028N04PQ56RLG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 40V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM028N04PQ56
40V N-Channel MOSFET
PDFN56
Key Parameter Performance
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
8. Drain
Parameter
VDS
Value
40
Unit
V
7. Drain
6. Drain
5. Drain
RDS(on)(max)
Qg
2.8
mΩ
nC
78
Features
Block Diagram
●
●
●
Low On-Resistance
Low Input Capacitance
Low Gate Charge
Ordering Information
Part No.
Package
Packing
TSM028N04PQ56 RLG
PDFN56
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
.
N-Channel MOSFET
Absolute Maximum Ratings (TC=25oC unless otherwise noted)
Parameter
Symbol
Limit
40
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
±20
V
TC=25°C
Continuous Drain Current (Note 3)
TA=25°C
140
ID
A
42
Drain Current-Pulsed (Note 1)
IDM
550
A
Single Pulse Avalanche Energy, L=0.1mH
EAS
201
mJ
TC=25°C
Maximum Power Dissipation (Note 2)
TA=25°C
83
PD
W
4.4
Storage Temperature Range
TSTG
TJ
-55 to +150
-55 to +150
°C
°C
Operating Junction Temperature Range
Thermal Performance
Parameter
Symbol
RӨJC
Limit
1.5
Unit
oC/W
oC/W
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
RӨJA
28
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Version: A14
TSM028N04PQ56
40V N-Channel MOSFET
Electrical Specifications (TJ=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 30A
VDS = VGS, ID = 250µA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
BVDSS
40
--
2
--
2.1
3
--
V
2.8
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Dynamic
RDS(ON)
VGS(TH)
IDSS
mΩ
V
4
1
--
--
--
µA
nA
IGSS
--
±100
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
78
22
--
--
--
--
--
--
VDD = 20V, ID = 30A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
nC
pF
4.7
Input Capacitance
4222
889
398
VDS = 20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
21
--
--
--
--
6
VGS = 10V, VDD = 20V,
ns
V
RG = 3Ω, ID = 13A
98
17
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
VGS=0V, IS=30A
Voltage
VSD
--
--
1.3
Reverse Recovery Time
IS = 30A, dI/dt = 100A/µs
Reverse Recovery Charge
tfr
--
--
32
--
--
ns
Qfr
120
nC
Notes:
1.
2.
Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference
is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air.
The maximum current rating is limited by package.
3.
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Version: A14
TSM028N04PQ56
40V N-Channel MOSFET
Electrical Characteristics Curves
Output Characteristics
Gate Threshold Voltage
IDS=250µA
Gate Source On Resistance
Drain-Source On Resistance
Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
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Version: A14
TSM028N04PQ56
40V N-Channel MOSFET
Electrical Characteristics Curves
Power Derating
Drain Current vs. Junction Temperature
Safe Operation Area
Transient Thermal Impedance
Capacitance
Gate Charge
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Version: A14
TSM028N04PQ56
40V N-Channel MOSFET
PDFN56 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
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Version: A14
TSM028N04PQ56
40V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: A14
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