TSM033NB04CR [TSC]
N-Channel Power MOSFET;
| 型号： | TSM033NB04CR |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总7页 (文件大小：394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM033NB04CR
Taiwan Semiconductor
N-Channel Power MOSFET
40V, 121A, 3.3mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Low RDS(ON) to minimize conductive losses
● Low gate charge for fast power switching
● 100% UIS and Rg tested.
PARAMETER
VALUE
UNIT
VDS
40
V
RDS(on) (max)
Qg
VGS = 10V
3.3
mΩ
nC
● 175°C Operating Junction Temperature
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
77
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● DC-DC converter
● Secondary Synchronous Rectification
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
UNIT
Drain-Source Voltage
40
±20
121
21
V
Gate-Source Voltage
VGS
V
TC = 25°C
TA = 25°C
Continuous Drain Current (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Current (Note 2)
Single Pulse Avalanche Energy(Note 2)
ID
A
IDM
IAS
484
36
A
A
EAS
194
mJ
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
107
Total Power Dissipation
Total Power Dissipation
PD
W
36
3.1
1
PD
W
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +175
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJC
LIMIT
1.4
UNIT
°C/W
°C/W
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJA
48
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in2 pad of 2 oz copper.
1
Version: A1712
TSM033NB04CR
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = 40V
BVDSS
VGS(TH)
IGSS
40
2
--
2.9
--
--
4
V
V
--
±100
1
nA
--
--
Drain-Source Leakage Current
IDSS
µA
VGS = 0V, VDS = 40V
TJ = 125°C
--
--
100
Drain-Source On-State Resistance
VGS = 10V, ID = 21A
VDS = 10V, ID = 21A
RDS(on)
gfs
--
--
2.4
64
3.3
--
mΩ
(Note 3)
Forward Transconductance (Note 3)
Dynamic (Note 4)
S
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
Rg
--
--
77
23
-
VGS = 10V, VDS = 20V,
ID = 21A
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
3
nC
--
19
Input Capacitance
--
5022
484
250
1.5
VGS = 0V, VDS = 20V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
--
pF
--
f = 1.0MHz
0.5
Ω
Switching (Note 4)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
7
--
--
--
--
22
35
17
VGS = 10V, VDS = 20V,
ns
ID = 21A, RG = 2Ω
Source-Drain Diode
Forward Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
--
--
--
--
1
--
--
V
VGS = 0V, IS = 21A
26
19
ns
nC
IS = 21A ,
Qrr
dI/dt = 100A/μs
Notes:
1. Silicon limited current only.
2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 36A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM033NB04CR RLG
PDFN56
2,500pcs / 13” Reel
2
Version: A1712
TSM033NB04CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
40
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
VGS=10V
VGS=7V
VGS=5.5V
VGS=5V
25℃
175℃
VGS=4.5V
-55℃
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
0.006
0.005
0.004
0.003
0.002
0.001
0
10
8
VDS=20V
ID=21A
6
4
VGS=10V
2
0
0
10
20
30
40
0
20
40
60
80
Qg, Gate Charge (nC)
ID, Drain Current (A)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
2.5
0.02
VGS=10V
ID=21A
2
0.016
0.012
0.008
0.004
0
1.5
1
0.5
0
ID=21A
5
6
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150 175
TJ, Junction Temperature (°C)
VGS, Gate to Source Voltage (V)
3
Version: A1712
TSM033NB04CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
7000
1.2
1.1
1
ID=5mA
6000
CISS
5000
4000
3000
2000
0.9
0.8
CRSS
1000
COSS
0
0
10
20
30
40
-75 -50 -25
0
25 50 75 100 125 150 175
VDS, Drain to Source Voltage (V)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area, Junction-to-Case
1000
Source-Drain Diode Forward Current vs. Voltage
100
RDS(ON)
100
10
25℃
175℃
-55℃
10
1
SINGLE PULSE
RӨJC=1.4°C/W
TC=25°C
1
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1
VSD, Body Diode Forward Voltage (V)
VDS, Drain to Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
SINGLE PULSE
RӨJC=1.4°C/W
1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.1
0.01
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.0001
0.001
0.01
0.1
t, Square Wave Pulse Duration (sec)
4
Version: A1712
TSM033NB04CR
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
G
Y
= Halogen Free
= Year Code
TSC
WW = Week Code (01~52)
= Factory Code
033NB04
GYWWF
F
5
Version: A1712
TSM033NB04CR
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
G
Y
= Halogen Free
= Year Code
TSC
033NB04
GYWWF
W = Week Code (01~52)
= Factory Code
F
6
Version: A1712
TSM033NB04CR
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7
Version: A1712
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