TSM036N03PQ56 [TSC]

30V N-Channel MOSFET;
TSM036N03PQ56
型号: TSM036N03PQ56
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

30V N-Channel MOSFET

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中文:  中文翻译
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TSM036N03PQ56  
30V N-Channel MOSFET  
PDFN56  
Key Parameter Performance  
Parameter Value  
VDS  
Pin Definition:  
1. Source  
2. Source  
3. Source  
4. Gate  
8. Drain  
Unit  
7. Drain  
6. Drain  
5. Drain  
30  
3.6  
5.5  
V
VGS = 10V  
VGS = 4.5V  
RDS(on) (max)  
Qg  
mΩ  
24  
nC  
Ordering Information  
Block Diagram  
Part No.  
Package  
Packing  
2.5kpcs / 13Reel  
TSM036N03PQ56 RLG  
PDFN56  
Note: Gdenotes for Halogen- and Antimony-free as those which contain  
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm  
antimony compounds  
N-Channel MOSFET  
Absolute Maximum Ratings (Tc = 25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
95  
V
V
VGS  
TC = 25℃  
Continuous Drain Current  
ID  
A
TC = 100℃  
60  
Drain Current-Pulsed (Note 1)  
Single Pulse Avalanche Energy (Note 2)  
IDM  
EAS  
IAS  
380  
125  
50  
A
mJ  
Single Pulse Avalanche Current  
A
Maximum Power Dissipation @ TC = 25℃  
Storage Temperature Range  
PD  
115  
W
TSTG  
TJ  
-55 to +175  
-55 to +175  
Operating Junction Temperature Range  
Thermal Performance  
Parameter  
Symbol  
RӨJC  
Limit  
1.3  
Unit  
/W  
/W  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
RӨJA  
62  
1/5  
Version: A14  
TSM036N03PQ56  
30V N-Channel MOSFET  
Electrical Specifications (TC = 25unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = 250µA  
VGS = 10V, ID = 24A  
VGS = 4.5V, ID = 12A  
VDS = VGS, ID = 250µA  
VDS = 30V, VGS = 0V  
BVDSS  
30  
--  
--  
--  
V
2.7  
4.1  
1.6  
--  
3.6  
5.5  
2.5  
1
Drain-Source On-State Resistance  
Gate Threshold Voltage  
RDS(ON)  
VGS(TH)  
mΩ  
--  
1.2  
--  
V
µA  
Zero Gate Voltage Drain Current  
IDSS  
VDS = 24V, VGS = 0V,  
TJ = 125℃  
--  
--  
--  
--  
10  
µA  
nA  
Gate Body Leakage  
Dynamic  
VGS = ±20V, VDS = 0V  
IGSS  
±100  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Switching  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
--  
--  
--  
--  
--  
--  
24  
4.2  
--  
--  
--  
--  
--  
--  
VDS = 15V, ID = 24A,  
VGS = 4.5V  
nC  
pF  
13  
2200  
280  
177  
VDS = 25V, VGS = 0V,  
f = 1.0MHz  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
td(on)  
tr  
td(off)  
tf  
--  
--  
--  
--  
12.6  
19.5  
42.8  
13.2  
--  
--  
--  
--  
VGS = 10V, VDS = 15V,  
ns  
V
RG = 3.3Ω, ID = 15A  
Drain-Source Diode Characteristics and Maximum Rating  
Drain-Source Diode Forward  
VGS = 0V, IS = 1A  
Voltage  
VSD  
--  
--  
1
Notes:  
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.  
2. VDD = 25V, VGS = 10V, L = 0.1mH, IAS = 50A, RG = 25, Starting TJ = 25.  
3. Pulse test: pulse width 300µs, duty cycle 2%  
4. Essentially independent of operating temperature.  
2/5  
Version: A14  
TSM036N03PQ56  
30V N-Channel MOSFET  
Electrical Characteristics Curves  
Continuous Drain Current vs. Tc  
Normalized RDS(on) vs. TJ  
TC, Case Temperature ()  
TJ, Junction Temperature ()  
Normalized Vth vs. TJ  
Gate Charge Waveform  
Qg, Gate Charge (nC)  
TJ, Junction Temperature ()  
Normalized Transient Impedance  
Maximum Safe Operation Area  
VDS, Drain to Source Voltage (V)  
Square Wave Pulse Duration (s)  
3/5  
Version: A14  
TSM036N03PQ56  
30V N-Channel MOSFET  
PDFN56 Mechanical Drawing  
Unit: Millimeters  
Marking Diagram  
Y
= Year Code  
M = Month Code for Halogen Free Product  
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,  
X=Oct, Y=Nov, Z=Dec)  
L
= Lot Code  
4/5  
Version: A14  
TSM036N03PQ56  
30V N-Channel MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSCs terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
5/5  
Version: A14  

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