TSM038N03PQ33 [TSC]

N-Channel Power MOSFET;


型号：	TSM038N03PQ33
厂家：	TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：	N-Channel Power MOSFET
文件：	总6页 (文件大小：317K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TSM038N03PQ33

Taiwan Semiconductor

N-Channel Power MOSFET

30V, 78A, 3.8mΩ

FEATURES

KEY PERFORMANCE PARAMETERS

● Low R_DS(ON)to minimize conductive losses

PARAMETER

VALUE

UNIT

● Low gate charge for fast power switching

V_DS

● 100% UIS and R_gtested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

V_GS= 10V

V_GS= 4.5V

3.8

R_DS(on)

(max)

mΩ

5.5

● Halogen-free according to IEC 61249-2-21

Q_g

APPLICATIONS

● DC-DC Converters

● Battery Power Management

● ORing FET/Load Switching

PDFN33

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

UNIT

Drain-Source Voltage

±20

Gate-Source Voltage

V_GS

T_C= 25°C

T_A= 25°C

Continuous Drain Current ^{(Note 1)}

Pulsed Drain Current

I_D

I_DM

312

Single Pulse Avalanche Current ^{(Note 2)}

Single Pulse Avalanche Energy ^{(Note 2)}

I_AS

E_AS

101

T_C= 25°C

T_C= 125°C

T_A= 25°C

T_A= 125°C

7.8

Total Power Dissipation

P_D

2.4

P_D

0.5

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

R_ӨJC

LIMIT

3.2

UNIT

°C/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

R_ӨJA

Thermal Performance Note: R_ӨJAis the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R_ӨJAis guaranteed by design while R_ӨCAis

determined by the user’s board design.

Version: B1610

TSM038N03PQ33

Taiwan Semiconductor

ELECTRICAL SPECIFICATIONS (T_A= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX UNIT

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Source Leakage Current

V_GS= 0V, I_D= 250µA

V_GS= V_DS, I_D= 250µA

V_GS= ±20V, V_DS= 0V

V_GS= 0V, V_DS= 30V

BV_DSS

V_GS(TH)

I_GSS

1.2

1.6

2.5

±100

Drain-Source Leakage Current

I_DSS

µA

V_GS= 0V, V_DS= 30V

T_J= 125°C

100

V_GS= 10V, I_D= 19A

V_GS= 4.5V, I_D= 16A

3.8

5.5

Drain-Source On-State Resistance

R_DS(on)

g_fs

mΩ

(Note 3)

Forward Transconductance ^{(Note 3)}

V_DS= 5V, I_D= 19A

Dynamic ^{(Note 4)}

V_GS= 10V, V_DS= 15V,

I_D= 19A

Total Gate Charge

Q_g

Total Gate Charge

Q_g

Q_gs

Q_gd

C_iss

C_oss

C_rss

R_g

6.9

V_GS= 4.5V, V_DS= 15V,

I_D= 16A

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

2557

380

276

1.5

V_GS= 0V, V_DS= 15V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1.0MHz

0.5

Switching ^{(Note 4)}

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10V, V_DS= 15V,

I_D= 19A, R_G= 2Ω,

Source-Drain Diode

Forward Voltage ^{(Note 3)}

Reverse Recovery Time

Reverse Recovery Charge

V_SD

t_rr

V_GS= 0V, I_S= 19A

I_S= 19A ,

Q_rr

dI/dt = 100A/μs

Notes:

1. Silicon limited current only.

2. L = 0.3mH, V_GS= 10V, V_DD= 25V, R_G= 25Ω, I_AS= 26A, Starting T_J= 25°C

3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

4. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM038N03PQ33 RGG

PDFN33

5,000pcs / 13” Reel

Version: B1610

TSM038N03PQ33

Taiwan Semiconductor

CHARACTERISTICS CURVES

(T_A= 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

V_GS=10V

V_GS=7V

V_GS=5V

V_GS=4.5V

V_GS=4V

V_GS=3.5V

V_GS=3V

25℃

150℃

-55℃

V_GS, Gate to Source Voltage (V)

V_DS, Drain to Source Voltage (V)

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

0.008

0.007

0.006

0.005

0.004

0.003

0.002

0.001

V_DS=15V

I_D=19A

V_GS=4.5V

V_GS=10V

Q_g, Gate Charge (nC)

I_D, Drain Current (A)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

1.8

0.02

0.015

0.01

0.005

V_GS=10V

I_D=19A

1.6

1.4

1.2

I_D=19A

0.8

0.6

-75 -50 -25

25 50 75 100 125 150

V_GS, Gate to Source Voltage (V)

T_J, Junction Temperature (°C)

Version: B1610

TSM038N03PQ33

Taiwan Semiconductor

CHARACTERISTICS CURVES

(T_A= 25°C unless otherwise noted)

BV_DSSvs. Junction Temperature

Capacitance vs. Drain-Source Voltage

1.2

1.1

3500

I_D=1mA

3000

CISS

2500

2000

1500

1000

0.9

0.8

COSS

500

CRSS

-75 -50 -25

25 50 75 100 125 150

V_DS, Drain to Source Voltage (V)

T_J, Junction Temperature (°C)

Maximum Safe Operating Area, Junction-to-Case

Source-Drain Diode Forward Current vs. Voltage

1000

100

R_DS(ON)

100

10us

-55℃

25℃

150℃

100us

1ms

SINGLE PULSE

R_ӨJC=3.2°C/W

T_C=25°C

10ms

0.1

100

0.2

0.4

0.6

0.8

1.2

V_SD, Body Diode Forward Voltage (V)

V_DS, Drain to Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

SINGLE PULSE

R_ӨJC=3.2°C/W

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single

0.1

0.01

Notes:

Duty = t₁/ t₂

T_J= T_C+ P_DMx Z_ӨJCx R_ӨJC

0.00001

0.0001

0.001

0.01

0.1

t, Square Wave Pulse Duration (sec)

Version: B1610

TSM038N03PQ33

Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)

PDFN33

SUGGESTED PAD LAYOUT (Unit: Millimeters)

MARKING DIAGRAM

Y = Year Code

M = Month Code

038N03

YML

O =Jan P =Feb Q =Mar R =Apr

S =May T =Jun U =Jul V =Aug

W =Sep X =Oct

Y =Nov Z =Dec

= Lot Code (1~9, A~Z)

Version: B1610

TSM038N03PQ33

Taiwan Semiconductor

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to

any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Version: B1610

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