TSM038N04LCP [TSC]

N-Channel Power MOSFET;


型号：	TSM038N04LCP
厂家：	TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：	N-Channel Power MOSFET
文件：	总6页 (文件大小：340K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TSM038N04LCP

Taiwan Semiconductor

N-Channel Power MOSFET

40V, 135A, 3.8mΩ

FEATURES

KEY PERFORMANCE PARAMETERS

● Low R_DS(ON)to minimize conductive losses

● Logic level

PARAMETER

VALUE

UNIT

V_DS

3.8

● Low gate charge for fast power switching

V_GS= 10V

V_GS= 4.5V

● 100% UIS and R_gtested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

R_DS(on)(max)

Q_g

mΩ

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● BLDC Motor Control

● Battery Power Management

● DC-DC converter

● Secondary Synchronous Rectification

(DPAK)

TO-252

Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C= 25°C

T_A= 25°C

135

Continuous Drain Current ^{(Note 1)}

Pulsed Drain Current

Single Pulse Avalanche Current ^{(Note 2)}

Single Pulse Avalanche Energy ^{(Note 2)}

I_D

I_DM

I_AS

540

E_AS

217

T_C= 25°C

T_C= 125°C

T_A= 25°C

T_A= 125°C

125

Total Power Dissipation

P_D

2.6

P_D

0.5

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

R_ӨJC

LIMIT

UNIT

°C/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

R_ӨJA

Thermal Performance Note: R_ӨJAis the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R_ӨJAis guaranteed by design while R_ӨCAis

determined by the user’s board design.

Version: A1701

TSM038N04LCP

Taiwan Semiconductor

ELECTRICAL SPECIFICATIONS (T_A= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX UNIT

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Source Leakage Current

V_GS= 0V, I_D= 250µA

V_GS= V_DS, I_D= 250µA

V_GS= ±20V, V_DS= 0V

V_GS= 0V, V_DS= 40V

BV_DSS

V_GS(TH)

I_GSS

1.2

1.5

2.5

±100

Drain-Source Leakage Current

I_DSS

µA

V_GS= 0V, V_DS= 40V

T_J= 125°C

100

V_GS= 10V, I_D= 19A

V_GS= 4.5V, I_D= 17A

2.8

3.4

3.8

Drain-Source On-State Resistance

R_DS(on)

g_fs

mΩ

(Note 3)

Forward Transconductance ^{(Note 3)}

V_DS= 5V, I_D= 19A

Dynamic ^{(Note 4)}

V_GS= 10V, V_DS= 20V,

I_D= 19A

Total Gate Charge

Q_g

104

Total Gate Charge

Q_g

Q_gs

Q_gd

C_iss

C_oss

C_rss

R_g

V_GS= 4.5V, V_DS= 20V,

I_D= 17A

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

5509

548

332

1.3

V_GS= 0V, V_DS= 20V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1.0MHz

0.4

2.6

Switching ^{(Note 4)}

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10V, V_DS= 20V,

I_D= 19A, R_G= 2Ω,

Source-Drain Diode

Forward Voltage ^{(Note 3)}

Reverse Recovery Time

Reverse Recovery Charge

V_SD

t_rr

V_GS= 0V, I_S= 19A

I_S= 19A ,

Q_rr

dI/dt = 100A/μs

Notes:

1. Silicon limited current only.

2. L = 0.3mH, V_GS= 10V, V_DD= 25V, R_G= 25Ω, I_AS= 38A, Starting T_J= 25°C

3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

4. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM038N04LCP ROG

TO-252 (DPAK)

2,500pcs / 13” Reel

Version: A1701

TSM038N04LCP

Taiwan Semiconductor

CHARACTERISTICS CURVES

(T_A= 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

V_GS=10V

V_GS=7V

V_GS=5V

V_GS=4.5V

V_GS=4V

V_GS=3.5V

V_GS=3V

25℃

V_GS=2.5V

150℃

-55℃

V_GS, Gate to Source Voltage (V)

V_DS, Drain to Source Voltage (V)

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

0.006

0.005

0.004

0.003

0.002

0.001

V_DS=20V

I_D=19A

V_GS=4.5V

V_GS=10V

100

120

Q_g, Gate Charge (nC)

I_D, Drain Current (A)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

0.01

0.008

0.006

0.004

0.002

1.8

1.6

1.4

1.2

V_GS=10V

I_D=19A

0.8

0.6

-75 -50 -25

25 50 75 100 125 150

T_J, Junction Temperature (°C)

V_GS, Gate to Source Voltage (V)

Version: A1701

TSM038N04LCP

Taiwan Semiconductor

CHARACTERISTICS CURVES

(T_A= 25°C unless otherwise noted)

BV_DSSvs. Junction Temperature

Capacitance vs. Drain-Source Voltage

8000

1.2

1.1

I_D=1mA

7000

6000

CISS

5000

4000

3000

2000

0.9

0.8

1000

COSS

CRSS

-75 -50 -25

25 50 75 100 125 150

V_DS, Drain to Source Voltage (V)

T_J, Junction Temperature (°C)

Maximum Safe Operating Area, Junction-to-Case

Source-Drain Diode Forward Current vs. Voltage

1000

100

R_DS(ON)

100

-55℃

150℃

25℃

SINGLE PULSE

R_ӨJC=1°C/W

T_C=25°C

0.1

100

0.2

0.4

0.6

0.8

V_SD, Body Diode Forward Voltage (V)

V_DS, Drain to Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

SINGLE PULSE

R_ӨJC=1°C/W

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single

0.1

0.01

Notes:

Duty = t₁/ t₂

T_J= T_C+ P_DMx Z_ӨJCx R_ӨJC

0.0001

0.001

0.01

0.1

t, Square Wave Pulse Duration (sec)

Version: A1701

TSM038N04LCP

Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)

TO-252 (DPAK)

SUGGESTED PAD LAYOUT (Unit: Millimeters)

MARKING DIAGRAM

= Year Code

M = Month Code

O =Jan

P =Feb

T =Jun

X =Oct

Q =Mar

U =Jul

Y =Nov

R =Apr

V =Aug

Z =Dec

038N04L

YML

S =May

W =Sep

= Lot Code (1~9, A~Z)

Version: A1701

TSM038N04LCP

Taiwan Semiconductor

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to

any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Version: A1701

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