TSM2N70CPROG [TSC]
700V N-Channel Power MOSFET; 700V N沟道功率MOSFET
| 型号： | TSM2N70CPROG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 700V N-Channel Power MOSFET |
| 文件： | 总10页 (文件大小：407K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM2N70
700V N-Channel Power MOSFET
Pin Definition:
1. Gate
2. Drain
3. Source
TO-220
TO-251
(IPAK)
TO-252
(DPAK)
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (A)
700
6.5 @ VGS =10V
1
General Description
The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp
ballast based on half bridge.
Block Diagram
Features
●
●
●
●
Low RDS(ON) 6.5Ω (Max.)
Low gate charge typical @ 9.5nC (Typ.)
Low Crss typical @ 4.5pF (Typ.)
Fast Switching
Ordering Information
Part No.
Package
Packing
50pcs / Tube
TSM2N70CZ C0
TSM2N70CH C5
TSM2N70CH C5G
TSM2N70CP RO
TSM2N70CP ROG
TO-220
TO-251
TO-251
TO-252
TO-252
70pcs / Tube
70pcs / Tube
N-Channel MOSFET
2.5Kpcs / 13” Reel
2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
VDS
VGS
ID
Limit
700
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous Drain Current
2
A
Pulsed Drain Current *
IDM
8
A
Repetitive avalanche Current
Single Pulse Avalanche Energy (Note 2)
Maximum Power Dissipation @TC = 25oC
Operating Junction Temperature
Storage Temperature Range
IAR
2
110
A
EAS
PTOT
TJ
mJ
W
ºC
oC
45
150
TSTG
-55 to +150
* Limited by maximum junction temperature
Thermal Performance
Parameter
Symbol
Limit
2.78
100
Unit
oC/W
oC/W
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨ
JC
RӨ
JA
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Version: B11
TSM2N70
700V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
VGS = 0V, ID = 1mA
VGS = 10V, ID = 1A
VDS = VGS, ID = 50uA
VDS = 700V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 15V, ID = 0.8A
IS = 1.6A, VGS = 0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
700
--
--
5.25
--
--
6.5
4
V
Ω
2
V
--
--
1
uA
nA
S
IGSS
--
--
±100
--
Forward Transconductance
Diode Forward Voltage
gfs
--
1.7
--
VSD
--
1.6
V
b
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
9.5
1.6
4.0
320
35
13
--
VDS = 480V, ID = 2A,
VGS = 10V
nC
pF
Gate-Source Charge
Gate-Drain Charge
--
Input Capacitance
--
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
--
4.5
--
c
Switching
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
--
--
--
--
--
--
--
18.4
35
--
--
--
--
--
--
--
VGS = 10V, ID = 0.8A,
nS
VDD = 350V, RG = 4.7Ω
Turn-Off Delay Time
Turn-Off Fall Time
32
34
Reverse Recovery Time
Reverse Recovery Charge
tfr
474.2
2067.8
5.16
nS
uC
A
VGS = 0V, IS = 1.3A,
VDD = 25V
Qfr
IRRM
dIF/dt = 100A/us
Reverse Recovery Current
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=2A, L=56mH, RG=25Ω
3. Pulse test: pulse width ≤300uS, duty cycle ≤1.5%
4. Essentially Independent of Operating Temperature
5. For design reference only, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
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Version: B11
TSM2N70
700V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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Version: B11
TSM2N70
700V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Version: B11
TSM2N70
700V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
5/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
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Version: B11
TSM2N70
700V N-Channel Power MOSFET
TO-220 Mechanical Drawing
TO-220 DIMENSION
MILLIMETERS INCHES
MIN
DIM
MIN
10.000
3.740
2.440
-
MAX
10.500
3.910
2.940
6.350
1.106
2.715
5.430
14.732
16.510
4.826
1.397
29.620
2.921
0.610
6.858
MAX
0.413
0.154
0.116
0.250
0.040
0.058
0.107
0.581
0.650
0.190
0.055
1.230
0.115
0.024
0.270
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
0.394
0.147
0.096
-
0.381
2.345
4.690
12.700
14.224
3.556
0.508
27.700
2.032
0.255
5.842
0.015
0.092
0.092
0.500
0.560
0.140
0.020
1.060
0.080
0.010
0.230
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
7/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
8/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
9/10
Version: B11
TSM2N70
700V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
10/10
Version: B11
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