TSM301K12CQ_13 [TSC]
20V P-Channel MOSFET with Schottky Diode; 20V P沟道MOSFET和肖特基二极管
| 型号： | TSM301K12CQ_13 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 20V P-Channel MOSFET with Schottky Diode |
| 文件： | 总7页 (文件大小：455K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM301K12
20V P-Channel MOSFET with Schottky Diode
TDFN 2x2
PRODUCT SUMMARY
Pin Definition:
1. Anode
2. NC
6. Cathode
5. Gate
VDS (V)
RDS(on)(mΩ)
94 @ VGS = -4.5V
131 @ VGS = -2.5V
185 @ VGS = -1.8V
ID (A)
-2.8
3. Drain
4. Source
7. Cathode 8. Drain
-20
-2.3
-0.54
SCHOTTKY PRODUCT SUMMARY
VR (V)
VF (V)
IF (A)
20
0.5
2
Block Diagram
Features
●
●
●
Configuration with MOSFET and Low Vf SKY
Package low profile 0.75mm (Typ)
Independent Pin Out for Design Flexibility
Application
●
●
●
●
Load Switch for Portable Applications
DC-DC Buck Circuit
Li-ion Battery Applications
Cellular Charger Switch
Ordering Information
P-Channel MOSFET with Schottky Diode
Part No.
Package
Packing
TSM301K12CQ RFG
TDFN 2x2
3Kpcs / 7” Reel
Note: “G” denotes for Halogen Free
o
MOSFET Absolute Maximum Rating (TA=25 C unless otherwise noted)
Parameter
Symbol
VDS
Limit
-20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1,2)
Pulsed Drain Current
VGS
12
V
ID
-4.5
A
IDM
-8
A
o
TC=25 C
6.5
W
W
Maximum Power Dissipation
PD
o
TA=25 C (Note 2)
1.56
o
Operating Junction Temperature
TJ
+150
- 55 to +150
C
o
Operating Junction and Storage Temperature Range
TJ, TSTG
C
o
Schottky Absolute Maximum Rating (TA=25 C unless otherwise noted)
Parameter
Symbol
Limit
20
Unit
V
Reverse Voltage
VR
IF
Average Forward Current (Note 1,2)
Pulsed Forward Current
2
A
IFM
5
A
o
TC=25 C
6.8
1.47
W
W
Maximum Power Dissipation (Note 1)
PD
o
TA=25 C (Note 2)
1/7
Version: D13
TSM301K12
20V P-Channel MOSFET with Schottky Diode
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
MOSFET
o
T
≤
5s
80
C/W
Thermal Resistance-Junction to Ambient
RӨJA
o
Steady State
120
C/W
Schottky
o
T
5s
85
C/W
≤
Thermal Resistance-Junction to Ambient
RӨJA
o
Steady State
130
C/W
Notes:
1. Surface mounted on 1” x 1” (2 oz) FAR4 board,
2. 5s
t
≤
o
MOSFET Electrical Specifications (Ta = 25 C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
VGS = 0V, ID = -250uA
VDS = VGS, ID = -250µA
VGS = 12V, VDS = 0V
VDS =-20V, VGS = 0V
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.3A
VGS = -1.8V, ID = -0.54A
IS = -1.6A, VGS = 0V
BVDSS
VGS(TH)
IGSS
-20
-0.5
--
--
--
--
--
--
--
--
--
--
--
V
V
100
-1
nA
µA
IDSS
--
--
94
a
Drain-Source On-State Resistance
Diode Forward Voltage
RDS(ON)
--
131
185
-1.2
mΩ
--
VSD
--
V
b
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
5.2
1.36
0.6
5.2
9.7
19
10
--
VDS = -6V, ID = -2.8A,
VGS = -5V
nC
Gate-Source Charge
Gate-Drain Charge
--
Input Capacitance
--
VGS=0V, VDS=-6V,
f =1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
--
--
c
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
29
295
170
65
--
--
--
--
VDS=-15V, RD=15Ω,
RG=6Ω, VGS=-10V
nS
o
Schottky Electrical Specifications (Ta = 25 C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage Drop
Maximum Reverse Leakage
Current
IF = 1A
VF
--
--
--
--
--
0.5
0.08
0.10
--
V
V = 5V
R
0.015
0.02
60
IRm
CT
mA
pF
V = 20V
R
Junction Capacitance
V = 10V
R
Notes:
a. pulse test: PW 300µS, duty cycle 2%
≤ ≤
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/7
Version: D13
TSM301K12
20V P-Channel MOSFET with Schottky Diode
o
MOSFET Electrical Characteristics Curve (Ta = 25 C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: D13
TSM301K12
20V P-Channel MOSFET with Schottky Diode
o
Electrical Characteristics Curve (Ta = 25 C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: D13
TSM301K12
20V P-Channel MOSFET with Schottky Diode
o
SCHOTTKY Electrical Characteristics Curve (Ta = 25 C, unless otherwise noted)
Typical Forward Current Derating Curve
Typical Instantaneous Forward Characteristics
Typical Reverse Characteristics
Typical Junction Capacitance
Maximum Repetitive Forward Surge Current
5/7
Version: D13
TSM301K12
20V P-Channel MOSFET with Schottky Diode
TDFN 2x2 Mechanical Drawing
MILLIMETERS
INCHES
DIM
MIN
1.95
1.95
0.50
0.30
0.20
MAX
2.05
2.05
0.60
0.40
0.30
MIN
MAX
A
B
C
D
E
F
0.0768
0.0768
0.0197
0.0118
0.0079
0.0807
0.0807
0.0236
0.0157
0.0118
0.65 BSC
0.0256 BSC
G
H
J
0.75
0.70
--
0.85
0.80
0.0295
0.0276
-
0.0335
0.0315
0.0020
0.0083
0.05
K
0.195
0.211
0.0077
Marking Diagram
Y
= Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
6/7
Version: D13
TSM301K12
20V P-Channel MOSFET with Schottky Diode
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7/7
Version: D13
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