TSM2NB60CIC0 [TSC]
600V N-Channel Power MOSFET; 600V N沟道功率MOSFET
| 型号： | TSM2NB60CIC0 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 600V N-Channel Power MOSFET |
| 文件： | 总10页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM2NB60
600V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (A)
2. Drain
3. Source
600
4.4 @ VGS =10V
1
General Description
The TSM2NB60 N-Channel Power MOSFET is
produced by new advance planar process. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
TO-251
(IPAK)
TO-252
(DPAK)
Block Diagram
Features
●
●
●
●
Low RDS(ON) 3.9Ω (Typ.)
Low gate charge typical @ 9.5nC (Typ.)
Low Crss typical @ 5pF (Typ.)
100% Avalanche Tested
Ordering Information
Part No.
Package
Packing
75pcs / Tube
TSM2NB60CH C5G
TSM2NB60CP ROG
TSM2NB60CZ C0
TSM2NB60CI C0
TO-251
TO-252
TO-220
ITO-220
2.5Kpcs / 13” Reel
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Limit
Parameter
Symbol
Unit
IPAK/DPAK
ITO-220
TO-220
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
600
V
V
±30
Tc = 25ºC
2
A
Continuous Drain Current
ID
Tc = 100ºC
1.35
A
Pulsed Drain Current *
IDM
EAS
IAR
8
A
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation @ TC = 25oC
Operating Junction Temperature
39
mJ
A
2
4.4
EAR
dv/dt
PTOT
TJ
mJ
V/ns
W
ºC
oC
4.5
44
25
70
150
Storage Temperature Range
TSTG
-55 to +150
Note: Limited by maximum junction temperature
1/10
Version: B11
TSM2NB60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Limit
Symbol
Unit
IPAK/DPAK
2.87
ITO-220
5
TO-220
1.78
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
RӨ
oC/W
oC/W
JC
RӨ
110
62.5
62.5
JA
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Dynamic
VGS = 0V, ID = 250uA
VGS = 10V, ID = 1A
BVDSS
RDS(ON)
VGS(TH)
IDSS
600
--
--
3.9
3.6
--
--
4.4
4.5
10
V
Ω
VDS = VGS, ID = 250uA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 40V, ID = 1A
2.5
--
V
uA
nA
S
IGSS
--
--
±100
--
gfs
--
1.5
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
9.4
2.2
4.7
249
30.7
5
--
--
--
--
--
--
VDS = 480V, ID = 2A,
VGS = 10V
nC
pF
Gate-Source Charge
Gate-Drain Charge
(Note 4,5)
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
9.1
9.8
--
--
--
--
VGS = 10V, ID = 2A,
VDD = 300V, RG =25Ω
(Note 4,5)
nS
17.4
12.4
Source-Drain Diode Ratings and Characteristic
Source Current
Integral reverse diode in
IS
ISM
VSD
tfr
--
--
--
--
--
--
--
2
8
A
A
the MOSFET
Source Current (Pulse)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS = 2A, VGS = 0V
VGS = 0V, IS =2A,
dIF/dt = 100A/us
0.9
490
0.8
1.4
--
V
nS
uC
Qfr
--
Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=2A, L=18mH, RG =25Ω, Starting TJ=25ºC
Note 3: ISD≤2A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC
Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 5: Essentially Independent of Operating Temperature
2/10
Version: B11
TSM2NB60
600V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
3/10
Version: B11
TSM2NB60
600V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/10
Version: B11
TSM2NB60
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
5/10
Version: B11
TSM2NB60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
TO-220 DIMENSION
MILLIMETERS INCHES
MIN
DIM
MIN
10.000
3.740
2.440
-
MAX
10.500
3.910
2.940
6.350
1.106
2.715
5.430
14.732
16.510
4.826
1.397
29.620
2.921
0.610
6.858
MAX
0.413
0.154
0.116
0.250
0.040
0.058
0.107
0.581
0.650
0.190
0.055
1.230
0.115
0.024
0.270
A
B
C
D
E
F
0.394
0.147
0.096
-
0.381
2.345
4.690
12.700
14.224
3.556
0.508
27.700
2.032
0.255
5.842
0.015
0.092
0.092
0.500
0.560
0.140
0.020
1.060
0.080
0.010
0.230
G
H
J
K
L
M
N
O
P
Marking Diagram
Y
= Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L
= Lot Code
6/10
Version: B11
TSM2NB60
600V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
ITO-220 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
0.395
MAX
A
B
C
D
E
F
G
H
I
10.04
10.07
0.396
6.20 (typ.)
0.244 (typ.)
2.20 (typ.)
0.087 (typ.)
∮1.40 (typ.)
∮0.055 (typ.)
15.0
15.20
0.54
2.73
13.55
1.49
2.80
4.50
0.591
0.598
0.021
0.107
0.533
0.058
0.110
0.177
0.52
2.35
13.50
1.11
2.60
4.49
0.020
0.093
0.531
0.044
0.102
0.176
J
K
L
1.15 (typ.)
0.045 (typ.)
M
N
O
3.03
2.60
6.55
3.05
2.80
6.65
0.119
0.102
0.258
0.120
0.110
0.262
Marking Diagram
Y
= Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L
= Lot Code
7/10
Version: B11
TSM2NB60
600V N-Channel Power MOSFET
TO-251 Mechanical Drawing
TO-251 DIMENSION
MILLIMETERS INCHES
DIM
MIN
2.10
0.65
0.58
4.80
0.68
0.35
0.40
5.30
6.30
MAX
2.50
1.05
0.62
5.20
0.72
0.65
0.60
5.70
6.70
MIN
MAX
0.083
0.026
0.023
0.189
0.027
0.014
0.016
0.209
0.248
0.098
0.041
0.024
0.205
0.028
0.026
0.024
0.224
0.264
A
b
b1
b2
b3
C
C1
D
E
e
2.30 BSC
0.09 BSC
0.276
0.055
0.051
0.020
0.315
0.071
0.067
0.035
L
7.00
1.40
1.30
0.50
8.00
1.80
1.70
0.90
L1
L2
L3
Marking Diagram
Y
= Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
8/10
Version: B11
TSM2NB60
600V N-Channel Power MOSFET
TO-252 Mechanical Drawing
TO-252 DIMENSION
MILLIMETERS INCHES
MIN MAX
0.090 BSC
0.402
DIM
MIN
MAX
A
B
2.30 BSC
0.425
0.224
0.264
0.098
0.008
0.205
0.031
0.024
0.026
0.144
0.043
0.059
0.067
10.20
5.30
6.30
2.10
0.00
4.80
0.40
0.40
0.35
3.35
0.50
0.90
1.30
10.80
5.70
6.70
2.50
0.20
5.20
0.80
0.60
0.65
3.65
1.10
1.50
1.70
0.209
0.248
0.083
0.000
0.189
0.016
0.016
0.014
0.132
0.020
0.035
0.051
C
D
E
F
G
G1
H
H1
J
K
L
M
Marking Diagram
Y
= Year Code
= Month Code for Halogen Free Product
M
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
9/10
Version: B11
TSM2NB60
600V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
10/10
Version: B11
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