TSM301K12CQRLG [TSC]
20V P-Channel MOSFET with Schottky Diode; 20V P沟道MOSFET和肖特基二极管
| 型号： | TSM301K12CQRLG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 20V P-Channel MOSFET with Schottky Diode |
| 文件： | 总7页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM301K12
20V P-Channel MOSFET with Schottky Diode
TDFN 2x2
PRODUCT SUMMARY
Pin Definition:
1. Anode
2. NC
3. Drain
6. Cathode
5. Gate
4. Source
VDS (V)
RDS(on)(mΩ)
94 @ VGS = -4.5V
131 @ VGS = -2.5V
185 @ VGS = -1.8V
ID (A)
-2.8
-20
-2.3
-0.54
SCHOTTKY PRODUCT SUMMARY
VR (V)
VF (V)
IF (A)
20
0.5
2
Block Diagram
Features
●
●
●
Configuration with MOSFET and Low Vf SKY
Package low profile 0.75mm (Typ)
Independent Pin Out for Design Flexibility
Application
●
●
●
●
Load Switch for Portable Applications
DC-DC Buck Circuit
Li-ion Battery Applications
Cellular Charger Switch
Ordering Information
P-Channel MOSFET with Schottky Diode
Part No.
Package
Packing
TSM301K12CQ RLG
TDFN 2x2
3Kpcs / 7” Reel
Note: “G” denotes for Halogen Free
MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
VDS
Limit
-20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1,2)
Pulsed Drain Current
VGS
±12
V
ID
-4.5
A
IDM
-8
A
TC=25 oC
TA=25 oC (Note 2)
6.5
W
W
oC
oC
Maximum Power Dissipation
PD
1.56
Operating Junction Temperature
TJ
+150
- 55 to +150
Operating Junction and Storage Temperature Range
TJ, TSTG
Schottky Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Limit
20
Unit
V
Reverse Voltage
VR
IF
Average Forward Current (Note 1,2)
Pulsed Forward Current
2
A
IFM
5
A
TC=25 oC
TA=25 oC (Note 2)
6.8
1.47
W
W
Maximum Power Dissipation (Note 1)
PD
1/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
MOSFET
T
≤
5s
80
oC/W
oC/W
Thermal Resistance-Junction to Ambient
RӨ
JA
Steady State
120
Schottky
T
≤
5s
85
oC/W
oC/W
Thermal Resistance-Junction to Ambient
RӨ
JA
Steady State
130
Notes:
1. Surface mounted on 1” x 1” (2 oz) FAR4 board,
2. 5s
t
≤
MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
VGS = 0V, ID = -250uA
VDS = VGS, ID = -250µA
VGS = ±12V, VDS = 0V
VDS =-20V, VGS = 0V
VGS = -4.5V, ID = -2.8A
BVDSS
VGS(TH)
IGSS
-20
-0.5
--
--
--
--
--
--
--
--
--
--
--
V
V
±100
-1
nA
µA
IDSS
--
--
94
Drain-Source On-State Resistancea VGS = -2.5V, ID = -2.3A
RDS(ON)
--
131
185
-1.2
mΩ
VGS = -1.8V, ID = -0.54A
--
Diode Forward Voltage
Dynamicb
IS = -1.6A, VGS = 0V
VSD
--
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
5.2
1.36
0.6
5.2
9.7
19
10
--
VDS = -6V, ID = -2.8A,
VGS = -5V
nC
pF
--
--
VGS=0V, VDS=-6V,
f =1.0MHz
--
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
29
295
170
65
--
--
--
--
VDS=-15V, RD=15Ω,
RG=6Ω, VGS=-10V
nS
Schottky Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage Drop
Maximum Reverse Leakage
Current
IF = 1A
VF
--
--
--
--
--
0.5
0.08
0.10
--
V
VR = 5V
0.015
0.02
60
IRm
CT
mA
pF
VR = 20V
VR = 10V
Junction Capacitance
Notes:
a. pulse test: PW
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
≤
300µS, duty cycle
≤
2%
2/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
SCHOTTKY Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Typical Forward Current Derating Curve
Typical Instantaneous Forward Characteristics
Typical Reverse Characteristics
Typical Junction Capacitance
Maximum Repetitive Forward Surge Current
5/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
TDFN 2x2 Mechanical Drawing
MILLIMETERS
INCHES
DIM
MIN
1.95
1.95
0.50
0.30
0.20
MAX
2.05
2.05
0.60
0.40
0.30
MIN
MAX
A
B
C
D
E
F
0.0768
0.0768
0.0197
0.0118
0.0079
0.0807
0.0807
0.0236
0.0157
0.0118
0.65 BSC
0.0256 BSC
G
H
J
0.75
0.70
--
0.85
0.80
0.0295
0.0276
-
0.0335
0.0315
0.0020
0.0083
0.05
K
0.195
0.211
0.0077
Marking Diagram
Y
= Year Code
= Month Code for Halogen Free Product
M
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
6/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7/7
Version: B11
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