TSM4539D [TSC]
Complementary Enhancement MOSFET; 加强互补MOSFET
| 型号： | TSM4539D |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Complementary Enhancement MOSFET |
| 文件： | 总4页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM4539D
Complementary Enhancement MOSFET
SOP-8
MOSFET PRODUCT SUMMARY
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
8. Drain 1
7. Drain 1
6. Drain 2
5. Drain 2
VDS (V)
RDS(on)(mΩ)
28 @ VGS = 10V
42 @ VGS = 4.5V
65 @ VGS = -10V
90 @ VGS = -4.5V
ID (A)
6.5
N-Channel
P-Channel
30
5.0
-4.2
-3.5
-30
Block Diagram
Features
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
PA Switch
●
Ordering Information
Part No.
Package
Packing
TSM4539DCS RLG
SOP-8
2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
N-Channel
P-Channel
MOSFET Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
N-CH Limit
Unit
P-CH Limit
Drain-Source Voltage
VDS
VGS
ID
30
±20
6.5
28
-30
±20
-4.2
-20
-1.9
2.1
V
V
Gate-Source Voltage
Continuous Drain Current, VGS
Pulsed Drain Current,
A
IDM
A
Drain-Source Diode Forward Current
Power Dissipation @ Ta = 25oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
IS
2.5
2.1
A
PD
W
oC
oC
TJ
150
-55 ~ +150
TJ, TSTG
Thermal Performance
Parameter
Symbol
N-CH Limit
Unit
oC/W
oC/W
P-CH Limit
Junction to Ambient Thermal Resistance
RӨ
62.5
40
62.5
40
JA
Junction to Lead Thermal Resistance
Notes:
RӨ
JL
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 5sec.
c. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz.
1/4
Version: A12
TSM4539D
Complementary Enhancement MOSFET
Electrical Specifications (TA=25oC unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max Unit
VGS =0V, ID = 250uA
VGS =0V, ID =-250uA
VDS =VGS, ID = 250µA
VDS =VGS, ID =-250µA
VGS = ±20V, VDS =0V
VGS = ±20V, VDS =0V
VDS =24V, VGS =0V
VDS =-24V, VGS =0V
VGS =10V, ID =6.5A
VGS =-10V, ID =-4.2A
VGS =4.5V, ID =5A
N-CH
30
-30
1.0
-1.0
--
--
--
--
V
--
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(TH)
IGSS
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
1.4
-1.5
--
3.0
V
-3.0
±100
nA
Gate Body Leakage
--
--
±10
--
--
1
Zero Gate Voltage Drain Current
IDSS
µA
-1
--
--
--
23
50
35
82
28
--
65
Drain-Source On-State
Resistancea
RDS(ON)
mΩ
42
--
VGS =-4.5V, ID =-3.5A
90
Dynamicb
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
--
--
--
--
--
--
--
--
--
--
--
--
7
--
--
--
N-Channel
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS =10V, ID =1A,
VGS =10V
9.7
1.6
1.6
1.0
1.3
610
100
77
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
nC
pF
--
--
--
--
--
--
--
--
--
P-Channel
VDS =-15V, ID =-5.2A,
VGS =-10V
N-Channel
VDS =15V, VGS = 0V,
f = 1.0MHz
P-Channel
551
90
VDS =-15V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Switchingb
60
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
--
--
--
--
--
--
--
--
--
--
7
6.2
10
6.2
16
26
7
--
--
Turn-On Delay Time
td(on)
tr
td(off)
tf
N-Channel
VDD =15V, ID = 1A,
VGEN =10V, RG = 6Ω
--
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
--
nS
V
--
P-Channel
--
VDD =-15V, ID = -1A,
--
VGEN =-10V, RG = 6Ω
5.5
--
--
IS =1 A, VGS = 0V
1.0
-1.3
Diode Forward Voltage
VSD
IS =-1.9A, VGS = 0V
--
Notes:
a. Pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
2/4
Version: A12
TSM4539D
Complementary Enhancement MOSFET
SOP-8 Mechanical Drawing
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
4.80
3.80
1.35
0.35
0.40
MAX
5.00
4.00
1.75
0.49
1.25
MAX.
0.196
0.157
0.068
0.019
0.049
A
B
C
D
F
0.189
0.150
0.054
0.014
0.016
G
K
M
P
R
1.27BSC
0.05BSC
0.10
0º
0.25
7º
0.004
0º
0.009
7º
5.80
0.25
6.20
0.50
0.229
0.010
0.244
0.019
3/4
Version: A12
TSM4539D
Complementary Enhancement MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A12
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