TSM500P02DCQRFG [TSC]

20V Dual P-Channel MOSFET;
TSM500P02DCQRFG
型号: TSM500P02DCQRFG
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

20V Dual P-Channel MOSFET

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中文:  中文翻译
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TSM500P02DCQ  
20V Dual P-Channel MOSFET  
TDFN2x2  
Key Parameter Performance  
Pin Definition:  
1. Source 1  
2. Gate 1  
6. Drain 1  
5. Gate 2  
4. Source 2  
Parameter  
Value  
-20  
50  
Unit  
VDS  
V
3. Drain 2  
VGS = -4.5V  
VGS = -2.5V  
VGS = -1.8V  
RDS(on) (max)  
65  
mΩ  
85  
Qg  
9.6  
nC  
Features  
Block Diagram  
l
l
l
Halogen-free  
Suited for 1.8V drive applications  
Low profile package  
Ordering Information  
Part No.  
Package  
Packing  
TSM500P02DCQ RFG TDFN2x2  
3kpcs / 7Reel  
Note: Gdenotes for Halogen- and Antimony-free as those which  
contain <900ppm bromine, <900ppm chlorine (<1500ppm total  
Br + Cl) and <1000ppm antimony compounds  
Dual P-Channel MOSFET  
Absolute Maximum Ratings (TC = 25unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
VDS  
-20  
±10  
V
V
Gate-Source Voltage  
VGS  
ID  
Continuous Drain Current  
-4.7  
A
Pulsed Drain Current (Note 1)  
Maximum Power Dissipation @ TC = 25℃  
Operating Junction Temperature  
Operating Junction and Storage Temperature Range  
IDM  
-18.8  
1
A
PD  
W
TJ  
+150  
- 55 to +150  
TJ, TSTG  
Thermal Performance  
Parameter  
Symbol  
Limit  
Unit  
Thermal Resistance Junction to Ambient  
RӨJA  
80  
/W  
1/5  
Version: A14  
TSM500P02DCQ  
20V Dual P-Channel MOSFET  
Electrical Specifications (TC = 25unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Source Leakage Current  
Drain-Source Leakage Current  
VGS = 0V, ID = -250µA  
VDS = VGS, ID = -250µA  
VGS = ±10V, VDS = 0V  
VDS = -20V, VGS = 0V  
VGS = -4.5V, ID = -3A  
VGS = -2.5V, ID = -2A  
VGS = -1.8V, ID = -1A  
VDS = -10V, ID = -3A  
BVDSS  
VGS(TH)  
IGSS  
-20  
-0.3  
--  
--  
-0.6  
--  
--  
-0.8  
±100  
-1  
V
V
nA  
µA  
IDSS  
--  
--  
--  
42  
57  
75  
7
50  
Drain-Source On-State Resistance  
RDS(on)  
--  
65  
mΩ  
--  
85  
Forward Transconductance (Note 2)  
Dynamic  
gfs  
--  
--  
S
Total Gate Charge (Note 2,3)  
Gate-Source Charge (Note 2,3)  
Gate-Drain Charge (Note 2,3)  
Input Capacitance  
--  
--  
--  
--  
--  
--  
9.6  
1.6  
2
13  
2
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
VDS = -10V, ID = -3A,  
VGS = -4.5V  
nC  
pF  
4
850  
70  
1230  
100  
80  
VDS = -10V, VGS = 0V,  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching  
55  
Turn-On Delay Time (Note 2,3)  
Turn-On Rise Time (Note 2,3)  
Turn-Off Delay Time (Note 2,3)  
Turn-Off Fall Time (Note 2,3)  
--  
--  
--  
--  
td(on)  
tr  
td(off)  
tf  
6
11  
41  
97  
26  
21.6  
51  
VDD = -10V, ID = -1A,  
ns  
VGS = -4.5V, RG = 25Ω  
13.8  
Drain-Source Diode Characteristics and Maximum Ratings  
Continuous Source Current  
VG = VD = 0V,  
IS  
--  
--  
--  
--  
-4.7  
A
A
Force Current  
Pulsed Source Current  
ISM  
-18.8  
VGS = 0V, IS = -1A,  
Diode Forward Voltage  
VSD  
--  
--  
-1  
V
TJ = 25℃  
Note:  
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.  
2. Pulse test: PW 300µs, duty cycle 2%.  
3. Essentially independent of operating temperature.  
2/5  
Version: A14  
TSM500P02DCQ  
20V Dual P-Channel MOSFET  
Electrical Characteristics Curves  
Continuous Drain Current vs. Tc  
Normalized RDSON vs. TJ  
TJ, Junction Temperature ()  
TC, Case Temperature ()  
Normalized Vth vs. TJ  
Gate Charge Waveform  
Qg, Gate Charge (nC)  
TJ, Junction Temperature ()  
Normalized Transient Impedance  
Maximum Safe Operation Area  
VDS, Drain to Source Voltage (V)  
Square Wave Pulse Duration (s)  
3/5  
Version: A14  
TSM500P02DCQ  
20V Dual P-Channel MOSFET  
TDFN2x2 Mechanical Drawing  
Marking Diagram  
Y
= Year Code  
M = Month Code for Halogen Free Product  
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,  
X=Oct, Y=Nov, Z=Dec)  
L
= Lot Code  
4/5  
Version: A14  
TSM500P02DCQ  
20V Dual P-Channel MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSCs terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
5/5  
Version: A14  

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