BAT74 [TYSEMI]
Low forward voltage Guard ring protected Small SMD package.; 低正向电压保护环小型SMD封装。型号: | BAT74 |
厂家: | TY Semiconductor Co., Ltd |
描述: | Low forward voltage Guard ring protected Small SMD package. |
文件: | 总2页 (文件大小:92K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Product specification
BAT74
Unit: mm
Features
Low forward voltage
Guard ring protected
Small SMD package.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VR
Test Condition
Min
Max
30
Unit
V
continuous reverse voltage
continuous forward current
repetitive peak forward current
series connection
single diode loaded
60
V
200
mA
mA
mA
mA
mA
mW
IF
110(1)
300
double diode loaded
single diode loaded ( tp 1 s;ä 0.5)
double diode loaded ( tp 1 s;ä 0.5)
tp < 10 ms
IFRM
200
non-repetitive peak forward current
total power dissipation
IFSM
Ptot
600
230
Tamb = 25
storage temperature
Tstg
Tj
-65
-65
+150
125
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
Note
Tamb
Rth j-a
+125
500
K/W
1.If both diodes are in forward operation at the same moment, total device current is max. 110 mA.
If one diode is in reverse and the other in forward operation at the same moment, total device current is max. 200 mA.
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Product specification
BAT74
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Condition
IF = 0.1 mA
Max
240
320
400
500
800
2
Unit
mV
IF = 1 mA;note 1
forward voltage
VF
IF = 10 mA
IF = 30 mA
IF = 100 mA
reverse current
IR
trr
VR = 25 V;note 2
A
when switched from IF = 10 mA to,IR = 10 mA;
reverse recovery time
5
ns
RL = 100 ; measured at IR = 1 mA
f = 1 MHz; VR = 1 V;
diode capacitance
Notes
Cd
10
pF
1. Temperature coefficient of forward voltage -0.6%/K.
2. Pulsed test: tp = 300
s; ä = 0.02.
Marking
Marking
L41
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