FCX690B [TYSEMI]

2W power dissipation, 6A peak pulse current.; 2W功耗, 6A峰值脉冲电流。
FCX690B
型号: FCX690B
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

2W power dissipation, 6A peak pulse current.
2W功耗, 6A峰值脉冲电流。

脉冲
文件: 总2页 (文件大小:201K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
T
Tr  
                                            
ra  
                                             
an  
                                              
ns  
                                               
si  
                                                
is  
                                                
st  
                                                 
tIo  
                                                  
oCr  
                                                   
rs  
                                                   
s
Product specification  
FCX690B  
Features  
2W power dissipation.  
6A peak pulse current.  
Gain of 400 @IC=1Amp.  
Very low saturation voltage.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Rating  
Unit  
V
45  
45  
5
Collector-emitter voltage  
Emitter-base voltage  
V
V
Continuous collector current  
6
A
Peak pulse current  
IC  
2
A
Power dissipation  
Ptot  
1
W
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
T
Tr  
                                            
ra  
                                             
an  
                                              
ns  
                                               
si  
                                                
is  
                                                
st  
                                                 
tIo  
                                                  
oCr  
                                                   
rs  
                                                   
s
Product specification  
FCX690B  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Testconditons  
Min  
45  
45  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
Collector Cut-Off Current  
IC=100ìA  
IC=10mA  
IE=100ìA  
VCB=9V  
V
V
0.1  
0.1  
ìA  
ìA  
Emitter Cut-Off Current  
IEBO  
VEB=4V  
80  
IC=0.1A, IB=0.5mA  
IC=1A, IB=5mA  
Collector-emitter saturation voltage *  
VCE(sat)  
mV  
300  
Base-emitter saturation voltage *  
Base-emitter ON voltage *  
VBE(sat)  
VBE(on)  
1.1  
1.0  
V
V
IC=1A, IB=10mA  
IC=1A, VCE=2V  
500  
400  
150  
IC=100mA,VCE=2V  
IC=1A,VCE=2V  
Static Forward Current Transfer Ratio*  
hFE  
IC=2A,VCE=2V  
Transitional frequency  
Input capacitance  
Output capacitance  
Turn-on time  
fT  
150  
MHz  
pF  
IC=50mA, VCE=5V, f=50MHz  
VEB=0.5V, f=1MHz  
VCB=10V, f=1MHz  
Cibo  
Cobo  
t(on)  
t(off)  
200  
16  
pF  
33  
ns  
IC=500mA, VCC=10V  
IB1=IB2=50mA  
Turn-off time  
1300  
ns  
* Pulse test: tp = 300 ìs; d  
0.02.  
Marking  
Marking  
690  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  

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