FMMT5089 [TYSEMI]
Small signal transistor; 小信号晶体管
| 型号： | FMMT5089 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Small signal transistor |
| 文件： | 总1页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
FMMT5089
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Small signal transistor.
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
25
Collector-emitter voltage
Emitter-base voltage
V
4.5
V
Collector current
50
mA
mW
Power dissipation
Ptot
330
Operating and storage temperature range
Tj,Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
IC=1mA, IB=0
Min
30
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Collector-base cut-off current
Emitter-base current
V(BR)CBO
V(BR)CEO
ICBO
25
V
IC=100mA,IE=0*
VCB=15V, IE=0
50
100
0.5
nA
nA
V
IEBO
VEB(off)=4.5V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=1mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VCE(sat)
VBE(sat)
hFE
0.8
V
400
50
1200
IC=100ìA, VCE=5V
Current-gain-bandwidth product
Output capacitance
fT
IC=500mA, VCE=5V f=20MHz
MHz
pF
Cobo
4
VCB=5V, f=1MHz, IE=0
VBE=0.5V, f=1MHz, IC=0
Emitter-base capacitance
Cebo
10
pF
IC=200mA, VCE=5V,
Noise figure
NF
hfe
2
dB
Rg=10KÙ, f=10Hz to 15KHz
Small signal current transfer ratio
IC=1mA, VCE=5V f=1KHz
450
1800
* Pulse test: tp
300 ìs; d
0.02.
Marking
Marking
1R
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