KRF7476PBF [TYSEMI]

VDS = 15 V RDS(on) 0.008VGS = 4.5V RDS(on) VGS = 2.8 V; VDS = 15 V的RDS(on ) 0.008VGS = 4.5V RDS ( ON) VGS = 2.8 V
KRF7476PBF
型号: KRF7476PBF
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

VDS = 15 V RDS(on) 0.008VGS = 4.5V RDS(on) VGS = 2.8 V
VDS = 15 V的RDS(on ) 0.008VGS = 4.5V RDS ( ON) VGS = 2.8 V

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SMD Type  
MOSFET  
ICIC  
ICIC  
Product specification  
KRF74 6PB  
7
F
Features  
VDS=15 V  
RDS(on) 0.008 @VGS=4.5V  
=
Ω
RDS(on) 0.03Ω @VGS=2.8 V  
=
A
A
D
1
2
3
4
8
7
S
S
D
6
5
S
D
D
G
Top View  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Rating  
15  
Unit  
V
Gate-Source Voltage  
VGS  
V
±12  
15  
Continuous Drain Current  
Pulsed Drain Current  
ID  
A
IDM  
120  
A
Maximum Power Dissipation  
Maximum Junction-to-Ambient  
PD  
2.5  
W
RthJA  
TJ, Tstg  
50  
°C/W  
Operating Junction and Storage Temperature Range  
-55 to 150  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  
ICIC  
ICIC  
Product specification  
KRF74 6PB  
7
F
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test conditions  
Min  
15  
Typ Max  
Unit  
V
Drain–Source Breakdown Voltage  
BVDSS VGS = 0 V, ID = –250 μA  
---  
---  
VDS = 9.6V , VGS = 0V  
100  
Zero Gate Voltage Drain Current  
IDSS  
μA  
---  
---  
250  
2.5  
200  
8.0  
30  
---  
0.8  
---  
VDS =  
, VGS = 0V , TJ =125  
9.6  
V
Gate Threshold Voltage  
Gate-Body Leakage  
VGS(th) VDS = VGS , ID = 250uA  
V
IGSS  
nA  
VDS = 0V , VGS = 12V  
VGS =4.5 V , ID =15 A  
---  
---  
6.0  
12  
---  
Drain-Source On-State Resistance *  
rDS(on)  
m
Ω
VGS =2.8 V , ID =12  
A
---  
---  
31  
---  
---  
---  
A
Avalanche Current  
Forward Transconductance*  
Total Gate Charge  
12  
---  
IAR  
gfs  
---  
VDS = 6.0V , ID =11A  
S
Qg  
26  
4.6  
11  
40  
---  
VDS = 10 V , VGS =4.5 V , ID = 12 A  
nc  
Gate-Source Charge  
Qgs  
Qgd  
Gate-Drain Charge  
---  
---  
---  
---  
---  
---  
---  
Turn-On Delay Time  
td(on)  
tr  
11  
Rise Time  
29  
VDD = 6.0V ,  
VGS =4.5 V , RG = 1.8Ω  
ID =12  
A
ns  
Turn-Off Delay Time  
td(off)  
tf  
19  
Fall Time  
---  
---  
8.3  
55  
---  
82  
---  
Source-Drain Reverse Recovery Time  
Continuous Source Current (Diode Conduction)  
Diode Forward Voltage*  
trr  
IF = 12 A , di/dt = 100A/us  
IS = 12 A, VGS = 0 V  
ns  
A
---  
---  
IS  
2.5  
0.87  
VSD  
1.2  
V
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
4008-318-123  

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