MMBF170 [TYSEMI]
SOT-23;
| 型号： | MMBF170 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | SOT-23 |
| 文件： | 总2页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
MMBF170
Features
·
·
·
·
·
·
Low On-Resistance
A
SOT-23
Low Gate Threshold Voltage
Low Input Capacitance
D
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Fast Switching Speed
B
C
B
Low Input/Output Leakage
Lead Free/RoHS Compliant (Note 2)
TOP VIEW
G
S
C
D
G
E
D
H
Mechanical Data
E
K
·
·
Case: SOT-23
M
G
H
J
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
L
J
Drain
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
K
L
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
M
Gate
a
·
·
·
Marking: (See Page 2) K6Z
All Dimensions in mm
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Source
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
MMBF170
Units
VDSS
VDGR
60
60
V
V
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
±20
±40
VGSS
ID
V
500
800
Drain Current (Note 1)
Continuous
Pulsed
mA
300
1.80
mW
mW/°C
Pd
Total Power Dissipation (Note 1)
RqJA
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
417
K/W
Tj, TSTG
-55 to +150
°C
Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
2. No purposefully added lead.
1 of 2
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4008-318-123
Product specification
MMBF170
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = 100mA
VDS = 60V, VGS = 0V
VGS = ±15V, VDS = 0V
60
¾
¾
70
¾
¾
¾
1.0
±10
V
µA
nA
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS (ON)
gFS
VDS = VGS, ID = 250mA
0.8
2.1
3.0
V
W
VGS = 10V, ID = 200mA
VGS = 4.5V, ID = 50mA
¾
¾
¾
¾
5.0
5.3
Static Drain-Source On-Resistance
VDS =10V, ID = 0.2A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
80
¾
¾
mS
Ciss
Coss
Crss
¾
¾
¾
22
11
40
30
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
2.0
5.0
ton
toff
¾
¾
¾
¾
10
10
ns
ns
VDD = 25V, ID = 0.5A,
VGS = 10V, RGEN = 50W
Turn-Off Time
Notes: 3. Short duration test pulse used to minimize self-heating effect.
(Note 4)
Ordering Information
Device
Packaging
Shipping
MMBF170-7-F
SOT-23
3000/Tape & Reel
Marking Information
K6Z = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K6Z
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
2 of 2
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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