CHA6664-QDG [UMS]
12-16GHz 1W High Power Amplifier; 12-16GHz 1W大功率功放
| 型号： | CHA6664-QDG |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 12-16GHz 1W High Power Amplifier |
| 文件： | 总10页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA6664-QDG
RoHS COMPLIANT
12-16GHz 1W High Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6664-QDG is a three-stages Ku-band
high power amplifier.
The circuit is manufactured with a standard
Power P-HEMT process: 0.25µm gate length,
via holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD package.
Main Features
dB(S21), dB(S11), dB(S22) versus frequency (GHz)
35
30
25
20
15
10
5
■ 0.25 µm Power pHEMT Technology
■ 12-16 GHz Frequency Range
■ 31.5 dBm Saturated Output Power
■ High gain: 28dB
0
■ Quiescent Bias Point: 8V, 600mA
■ 24L-QFN4x4 SMD package
-5
-10
-15
-20
-25
-30
-35
-40
dB(S21)
dB(S11)
dB(S22)
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Frequency (GHz)
Typical on board measurements
Main Characteristics
Tamb = +25°C, Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode
Symbol
F_op
Parameter
Operating Frequency Range
Saturated output power
Linear Gain
Min
Typ
Max
Unit
GHz
dBm
dB
12
16
P_Sat
G_lin
31.5
28
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA6664QDG6332 - 28 Nov 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Electrical Characteristics
Tamb = +25°C, Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode
These values are representative of onboard measurements as defined on the drawing 96372
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
12
16
GHz
G_lin
Linear Gain
28
±2
dB
dB
Gain flatness (12 – 16GHz)
∆G
G_lin_T Linear gain variation versus temperature
dB/°C
±0.06
2.0:1
2.0:1
30
IS11I
IS22I
P1dB
P_Sat
Input return loss ( 12 – 16GHz)
Output return loss
Output power at 1dB gain compression
Saturated Output power
dBm
dBm
%
31.5
25
PAE_Sat Power Added Effciency in saturation
Id Power supply quiescent current (1)
Id_1dBc Power supply @1dB gain compression
Id_sat Power supply in saturation
600
750
800
8
mA
mA
mA
V
Vd 1,2,3 Positive drain bias voltage
Vg 1,2,3 Negative gate bias voltage
-0.8
V
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the backside of the package
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
RF input power
9
V
Pin
Tj
14
dBm
°C
175
Junction temperature (2)
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Equivalent thermal resistance channel to ground paddle =15.7°C/W for Tground paddle. = +85°C
with 8V, 600mA
Ref.: DSCHA6664QDG6332 - 28 Nov 06
2/10
/Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Typical Measured Performance
Tamb = +25°C, Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode
Measurements in the board access planes (without any correction), using the
proposed land pattern & board 96372.
Gain and Input/Output Return Losses (dB)
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
dB(S21)
dB(S11)
dB(S22)
11
12
13
14
15
16
17
Frequency (GHz)
Gain (dB) versus Frequency @Pin=[-20; +5; +10dBm]
30
29
28
27
26
25
24
23
22
21
20
Gain (dB) @Pin=-20dBm
Gain(dB) @Pin=+5dBm
Gain(dB) @Pin=+10dBm
12
13
14
15
16
Frequency (GHz)
Ref.: DSCHA6664QDG6332 - 28 Nov 06
3/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Output power (dBm) versus Frequency @Pin=[+1; +5; +10dBm]
33
32
31
30
29
28
27
26
25
Pout (dBm) @Pin=+1 dBm
Pout (dBm) @Pin=+5dBm
Pout(dBm) @Pin=+10dBm
12
13
14
15
16
Frequency (GHz)
Power Added Efficiency (%) versus Frequency @Pin=[+1; +5; +10dBm]
32
30
28
26
24
22
20
18
16
14
12
10
8
PAE (%) @Pin=+1 dBm
PAE (%) @Pin=+5dBm
PAE (%) @Pin=+10dBm
12
13
14
15
16
Frequency (GHz)
Ref.: DSCHA6664QDG6332 - 28 Nov 06
4/10
/Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Output power (dBm) versus Frequency @Pin=+10dBm
Temp=[-40 / +25 / +85 deg]
33
32
31
30
29
28
Pout(dBm) Temp=-40deg
Pout(dBm) @Temp=+25deg
Pout(dBm) @Temp=+85deg
12
13
14
Frequency (GHz)
15
16
Ref.: DSCHA6664QDG6332 - 28 Nov 06
5/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Package outline:
A6664
Matt tin, Lead Free
Units
(Green)
mm
1-
2-
Nc
13-
14-
15-
Gnd
Gnd
RF IN
Gnd
Gnd
Nc
Gnd
Gnd
From the standard
Pin 25 (paddle) GND
JEDEC MO-220
3-
4-
RF OUT 16-
5-
Gnd
Gnd
Vd3
Vd2
Nc
17-
18-
19-
20-
21-
22-
23-
24-
6-
7-
Nc
8-
Vg1
Vg2
Vg3
Nc
9-
10-
11-
12-
Vd1
Nc
Nc
Nc
Ref.: DSCHA6664QDG6332 - 28 Nov 06
6/10
/Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Application note
The design of the motherboard has a strong impact on the over all performance since the
transition from the motherboard to the package is comparably large. In case of the SMD type
packages of United Monolithic Semiconductors the motherboard should be designed
according to the information given in the following to achieve good performance. Other
configurations are also possible but can lead to different results. If you need advise please
contact United Monolithic Semiconductors for further information.
SMD type packages of UMS should allow design and fabrication of micro- and mm-wave
modules at low cost. Therefore, a suitable motherboard environment has been chosen. All
tests and verifications have been performed on Rogers RO4003. This material exhibits a
permittivity of 3.38 and has been used with a thickness of 200µm [8 mils] and a 1/2oz or less
copper cladding. The corresponding 50Ohm transmission line has a strip width of about
460µm [approx. 18 mils].
The contact areas on the motherboard for the package connections should be designed
according to the footprint given above. The proper via structure under the ground pad is very
important in order to achieve a good RF and lifetime performance. All tests have been done
by using a grid of plenty plated through vias with a diameter of less than 300µm [12 mils] and
a spacing of less than 700µm [28 mils] from the centres of two adjacent vias. The via grid
should cover the whole space under the ground pad and the vias closest to the RF ports
should be located near the edge of the pad to allow a good RF ground connection. Since the
vias are important for heat transfer, a proper via filling should be guaranteed during the
mounting procedure to get a low thermal resistance between package and heat sink. For
power devices the use of heat slugs in the motherboard instead of a grid of via’s is
recommended.
For the mounting process the SMD type package can be handled as a standard surface
mount component. The use of either solder or conductive epoxy is possible. The solder
thickness after reflow should be typical 50µm [2 mils] and the lateral alignment between the
package and the motherboard should be within 50µm [2 mils]. Caution should be taken to
obtain a good and reliable contact over the whole pad areas. Voids or other improper
connections, in particular, between the ground pads of motherboard and package will lead to
a deterioration of the RF performance and the heat dissipation. The latter effect can reduce
drastically reliability and lifetime of the product.
Ref.: DSCHA6664QDG6332 - 28 Nov 06
7/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Unit : mm
(For production, design must be adapted with regard to PCB tolerances and
assembly process)
Basic footprint for a 24L-QFN4x4
(Please, refer to the UMS proposed footprint for optimum
operation in the following “Proposed Assembly board” section)
The RF ports are DC blocked on chip. The DC connection (Vd) does not include any
decoupling capacitor in package, therefore it is mandatory to provide a good external DC
decoupling on the PC board, as close as possible to the package.
SMD mounting procedure
The SMD leadless package has been designed for high volume surface mount PCB
assembly process. The dimensions and footprint required for the PCB (motherboard) are
given in the drawings above.
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Ref.: DSCHA6664QDG6332 - 28 Nov 06
8/10
/Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Proposed Assembly board “96372” for the 24L-QFN4x4 products
characterization.
-
-
Compatible with the proposed footprint.
Based on typically Ro4003 / 8mils or equivalent.
-
-
-
Using a microstrip to coplanar transition to access the package.
Recommended for the implementation of this product on a module board.
Ref.: DSCHA6664QDG6332 - 28 Nov 06
9/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
12-16GHz High Power Amplifier
CHA6664-QDG
Ordering Information
QFN 4x4 RoHS compliant package
:
CHA6664-QDG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United Monolithic
Semiconductors S.A.S.
Ref.: DSCHA6664QDG6332 - 28 Nov 06
10/10
/Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
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