CHR2293-99F/00 [UMS]

20-24GHz Integrated Down Converter; 20-24GHz集成下变频器
CHR2293-99F/00
型号: CHR2293-99F/00
厂家: UNITED MONOLITHIC SEMICONDUCTORS    UNITED MONOLITHIC SEMICONDUCTORS
描述:

20-24GHz Integrated Down Converter
20-24GHz集成下变频器

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中文:  中文翻译
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CHR2293  
20-24GHz Integrated Down Converter  
GaAs Monolithic Microwave IC  
LO  
Description  
The CHR2293 is a multifunction chip which  
integrates a LO X2 multiplier, a balanced cold  
FET mixer, and a RF LNA. It is designed for a  
wide range of applications, typically commercial  
communication systems. The backside of the  
chip is both RF and DC grounds. This helps  
simplify the assembly process.  
Q
I
GM  
GB  
The circuit is manufactured with a PM-HEMT  
process, 0.25µm gate length, via holes through  
the substrate, air bridges and electron beam  
gate lithography.  
VDM  
VDL  
GX  
VGA  
It is available in chip form.  
RF  
Main Features  
Broadband performances : 20-24GHz  
11 dB conversion gain  
4dB noise figure  
10dBm LO input power  
-8dBm RF input power (1dB gain comp.)  
Low DC power consumption, 130mA@3.5V  
Chip size : 2.49 X 1.97 X 0.10 mm  
Main Characteristics  
Tamb. = 25°C  
Parameter  
Min  
Typ  
Max  
Unit  
FRF  
FLO  
FIF  
RF frequency range  
24  
30  
12.75  
1.5  
GHz  
GHz  
GHz  
dB  
LO frequency range  
IF frequency range  
Conversion gain  
9.25  
0.25  
Gc  
+11  
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !  
Ref. : DSCHR22932108 -18-April-02  
1/4  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
20-24GHz MFC Down Converter  
CHR2293  
Electrical Characteristics for Broadband Operation  
Tamb = +25°C, Vd = 3.5V  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
FRF  
FLO  
FIF  
RF frequency range  
20  
24  
12.75  
1.5  
GHz  
GHz  
GHz  
dB  
LO frequency range  
IF frequency range  
Conversion gain (1)  
Noise Figure (1)  
9.25  
0.25  
Gc  
+11  
4
NF  
PLO  
dB  
LO Input power  
+10  
17  
dBm  
dBc  
dBm  
Img Sup Image Suppression (2)  
P1dB  
Input power at 1dB gain compression  
-8  
LO VSWR Input LO VSWR (1)  
RF VSWR Input RF VSWR (1)  
2.0:1  
2.0:1  
130  
Id  
Bias current (3)  
mA  
(1) On Wafer measurements  
(2) With external I/ Q combiner  
(3) Current source biasing network is recommended. Optimum performances for Idm= 50mA  
and Idl= 80mA  
Absolute Maximum Ratings  
Tamb. = 25°C (1)  
Symbol  
Vd  
Parameter  
Values  
4.0  
Unit  
V
Drain bias voltage  
Drain bias current  
Gate bias voltage  
Id  
200  
mA  
V
Vg  
-2.0 to +0.4  
+15  
Pin  
Maximum peak input power overdrive (2)  
Operating temperature range  
dBm  
°C  
Ta  
-40 to +85  
-55 to +155  
Tstg  
Storage temperature range  
°C  
(1) Operation of this device above anyone of these parameters may cause permanent damage.  
(2) Duration < 1s.  
Ref. : DSCHR22932108 -18-April-02  
2/4  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
20-24GHz MFC Down Converter  
CHR2293  
Chip Assembly and Mechanical Data  
LO  
IN  
To Vgm DC Gate Supply  
To Vgb DC Gate Supply  
Q
OUT  
To Vdm,Vdl DC Drain Supply  
To Vgx DC Gate Supply  
I
OUT  
To Vga DC Gate Supply  
RF  
IN  
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended  
Bonding pad positions  
( Chip thickness : 100µm. All dimensions are in micrometers )  
Ref. : DSCHR22932108 -18-April-02  
3/4  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
CHR2293  
Ordering Information  
Chip form  
:
CHR2293-99F/00  
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors  
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of  
patents or other rights of third parties which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all  
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use  
as critical components in life support devices or systems without express written approval from United  
Monolithic Semiconductors S.A.S.  
Ref. : DSCHR22932108 -18-April-02  
4/4  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  

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