CHR2295 [UMS]

24-30GHz Integrated Down Converter; 24-30GHz集成下变频器
CHR2295
型号: CHR2295
厂家: UNITED MONOLITHIC SEMICONDUCTORS    UNITED MONOLITHIC SEMICONDUCTORS
描述:

24-30GHz Integrated Down Converter
24-30GHz集成下变频器

文件: 总6页 (文件大小:147K)
中文:  中文翻译
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CHR2295  
24-30GHz Integrated Down Converter  
GaAs Monolithic Microwave IC  
LO  
Description  
The CHR2295 is a multifunction chip which  
integrates a LO time two multiplier, a balanced  
cold FET mixer, and a RF LNA. It is designed for  
a wide range of applications, typically commercial  
communication systems. The backside of the  
chip is both RF and DC grounds. This helps  
simplify the assembly process.  
Q
I
GM  
GB  
The circuit is manufactured with a PM-HEMT  
process, 0.25µm gate length, via holes through  
the substrate, air bridges and electron beam  
gate lithography.  
VDM  
VDL  
GX  
VGA  
It is available in chip form.  
RF  
Main Features  
12.00  
8.00  
Broadband performances : 24-30GHz  
11 dB conversion gain  
4.00  
Gc_channel_sup_rf+  
Gc_channel inf_rf-  
Gc_channel_inf_rf+  
Gc_channel_sup_rf-  
3.5.0dB noise figure  
0.00  
-4.00  
-8.00  
-12.00  
-16.00  
-20.00  
10dBm LO input power  
-10dBm RF input power (1dB gain comp.)  
Low DC power consumption, 120mA@3.5V  
Chip size : 2.49 X 1.97 X 0.10 mm  
-24.00  
22.5  
23.5  
24.5  
25.5  
26.5  
27.5  
28.5  
29.5  
30.5  
31.5  
32.5  
2XLO Frequency (GHz)  
Conversion Gain & Image suppression @ IF=1.5GHz  
(including test board losses)  
Main Characteristics  
Tamb. = 25°C  
Parameter  
Min  
Typ  
Max  
Unit  
FRF  
FLO  
FIF  
RF frequency range  
24  
12  
30  
15  
GHz  
GHz  
GHz  
dB  
LO frequency range  
IF frequency range  
Conversion gain  
0.25  
1.5  
Gc  
11  
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !  
Ref. : DSCHR22951201 -20-July-01  
1/6  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
24-30GHz MFC Down Converter  
CHR2295  
Electrical Characteristics for Broadband Operation  
Tamb = +25°C, Vd = 3.5V  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
FRF  
FLO  
FIF  
RF frequency range  
24  
12  
30  
15  
GHz  
GHz  
GHz  
dB  
LO frequency range  
IF frequency range  
Conversion gain (1)  
Noise Figure  
0.25  
1.5  
Gc  
11  
3.5  
NF  
PLO  
dB  
LO Input power  
+10  
17  
dBm  
dBc  
dBm  
Img Sup Image Suppression  
P1dB  
Input power at 1dB gain compression  
-10  
LO VSWR Input LO VSWR (1)  
RF VSWR Input RF VSWR (1)  
2.0:1  
3.0:1  
120  
Id  
Bias current (2)  
mA  
(1) On Wafer measurements  
(2) Current source biasing network is recommended. Optimum performances for Idm= 50mA  
and Idl= 70mA  
Absolute Maximum Ratings  
Tamb. = 25°C (1)  
Symbol  
Vd  
Parameter  
Values  
4.0  
Unit  
V
Drain bias voltage  
Drain bias current  
Gate bias voltage  
Id  
200  
mA  
V
Vg  
-2.0 to +0.4  
+15  
Pin  
Maximum peak input power overdrive (2)  
Operating temperature range  
dBm  
°C  
Ta  
-40 to +85  
-55 to +155  
Tstg  
Storage temperature range  
°C  
(1) Operation of this device above anyone of these parameters may cause permanent damage.  
(2) Duration < 1s.  
Ref. : : DSCHR22951201 -20-July-01  
2/6  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
24-30GHz MFC Down Converter  
CHR2295  
Typical On-wafer Measurements  
Bias Conditions : Vdm= Vdl= 3.5 V, Vgm= -0.9V, Vgb= -0.3V, Vgx= -0.7V, Vga= -0.2V  
10  
8
6
4
2
0
-2  
-4  
-6  
Freq_RF= 24.6GHz  
Freq_LO= 12.05GHz  
-8  
-10  
-12  
-14  
IF power_I (dBm)  
IF power_Q (dBm)  
Conv_gain I (dB)  
Conv_gain Q (dB)  
-20  
-18  
-16  
-14  
-12  
-10  
-8  
-6  
-4  
Input RF power (dBm)  
10  
8
6
4
2
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
Freq_RF= 28GHz  
Freq_LO= 13.75GHz  
IF power_I (dBm)  
IF power_Q (dBm)  
Conv_gain I (dB)  
Conv_gain Q (dB)  
-20  
-18  
-16  
-14  
-12  
-10  
-8  
-6  
-4  
Input RF power (dBm)  
Input RF compression by channel  
Ref. : : DSCHR22951201 -20-July-01  
3/6  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
24-30GHz MFC Down Converter  
CHR2295  
Typical On-board Measurements  
Bias Conditions : Vdm= Vdl= 3.5 V, Vgm= Vgx= -0.9V, Vgb= Vga= -0.3V  
All these measurements include the losses from the test board (about 1dB on the conversion  
gain and 0.5dB on the noise figure).  
12.00  
8.00  
4.00  
0.00  
-4.00  
IF=1GHz  
-8.00  
IF=2GHz  
IF=1.5GHz  
-12.00  
-16.00  
-20.00  
-24.00  
IF=1GHz  
32.5  
IF=2GHz  
IF=1.5GHz  
27.5  
22.5  
23.5  
24.5  
25.5  
26.5  
28.5  
29.5  
30.5  
31.5  
2XLO Frequency (GHz)  
Conversion gain & Image suppression versus IF frequency  
10  
9
8
7
6
5
4
3
2
1
0
Channel_sup_IF_1GHz  
Channel_sup_IF_1.5GHz  
Channel_sup_IF_2GHz  
Channel_inf_IF_1GHz  
Channel_inf_IF_1.5GHz  
Channel_inf_IF_2GHz  
24.5  
25  
25.5  
26  
26.5  
RF Frequency (GHz)  
Noise figure supradyne & infradyne versus IF frequency  
27  
27.5  
28  
28.5  
29  
29.5  
Ref. : : DSCHR22951201 -20-July-01  
4/6  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
24-30GHz MFC Down Converter  
CHR2295  
Chip Assembly and Mechanical Data  
LO  
IN  
Q
OUT  
To Vgm DC Gate Supply  
To Vgb DC Gate Supply  
To Vdm,Vdl DC Drain Supply  
To Vgx DC Gate Supply  
I
OUT  
To Vga DC Gate Supply  
RF  
IN  
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended  
Bonding pad positions  
( Chip thickness : 100µm. All dimensions are in micrometers )  
Ref. : : DSCHR22951201 -20-July-01  
5/6  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  
CHR2295  
Ordering Information  
Chip form  
:
CHR2295-99F/00  
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors  
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of  
patents or other rights of third parties which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all  
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use  
as critical components in life support devices or systems without express written approval from United  
Monolithic Semiconductors S.A.S.  
Ref. : DSCHR22951201 -20-July-01  
6/6  
Specifications subject to change without notice  
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE  
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09  

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