CHR2296 [UMS]
36- 40GHz Integrated Down Converter; 36- 40GHz的集成下变频器
| 型号： | CHR2296 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 36- 40GHz Integrated Down Converter |
| 文件： | 总5页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHR2296
36- 40GHz Integrated Down Converter
GaAs Monolithic Microwave IC
LO
Description
The CHR2296 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is designed for
a wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
Q
I
GM
GB
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
VDM
VDL
GX
VGA
It is available in chip form.
RF
Main Features
Typical on wafer measurement:
16
12
8
•
•
•
•
•
•
•
Broadband performances : 36-40GHz
11 dB conversion gain
4
5dB noise figure
0
-4
10dBm LO input power
-8
Gc_channel_inf_rf-
Gc_channel_inf_rf+
Gc_channel_sup_rf-
Gc_channel_sup_rf+
-10dBm RF input power (1dB gain comp.)
Low DC power consumption, 110mA@3.5V
Chip size : 2.49 X 1.97 X 0.10 mm
-12
-16
-20
-24
-28
34
35
36
37
38
39
40
2*LO Frequency (GHz)
Conversion Gain & Image suppression @ IF=1GHz
Main Characteristics
Tamb. = 25°C
Parameter
Min
Typ
Max
Unit
FRF
FLO
FIF
RF frequency range
36
17
40
20
GHz
GHz
GHz
dB
LO frequency range
IF frequency range
Conversion gain
0.25
1.5
Gc
11
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHR22962147 25-May-02
1/5
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40 MFC Down Converter
CHR2296
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
FRF
FLO
FIF
RF frequency range
36
17
40
20
GHz
GHz
GHz
dB
LO frequency range
IF frequency range
Conversion gain (1)
Noise Figure (1)
0.25
1.5
Gc
11
5
NF
PLO
dB
LO Input power
+10
15
dBm
dBc
dBm
Img Sup Image Suppression
P1dB
Input power at 1dB gain compression
-10
2.0:1
3.0:1
110
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (2)
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Maximum drain bias voltage
Values
4.0
Unit
V
Id
Maximum drain bias current
200
mA
V
Vg
Gate bias voltage
-2.0 to +0.4
-5
Vgd
Pin
Minimum negative gate drain voltage ( Vg – Vd)
Maximum peak input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
V
+15
dBm
°C
°C
°C
Tch
Ta
175
-40 to +85
-55 to +125
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHR22962147 25-May-02
2/5
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40 MFC Down Converter
CHR2296
Typical On-wafer Measurements
Bias Conditions : Vdm= Vdl= 3.5 V, Vgm= -0.9V, Vgb= -0.4V, Vgx= -0.8V, Vga= -0.5V
16
12
8
4
0
-4
-8
Gc_channel_inf_rf-
Gc_channel_inf_rf+
Gc_channel_sup_rf-
Gc_channel_sup_rf+
-12
-16
-20
-24
-28
34
35
36
37
38
39
40
2*LO Frequency (GHz)
Conversion gain & Image suppression with a 90° IQ combiner @ IF=1GHz
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
Freq. RF= 38GHz
Freq LO= 18.5GHz
Conversion Gain_I (dB)
IF_power_I (dBm)
Conversion Gain_Q (dB)
IF_power_Q (dBm)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Input RF power (dBm)
Input RF compression by channel
Ref. : DSCHR22962147 25-May-02
3/5
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40 MFC Down Converter
CHR2296
Chip Assembly and Mechanical Data
LO
IN
Q
OUT
To Vgm DC Gate Supply
To Vgb DC Gate Supply
To Vdm,Vdl DC Drain Supply
To Vgx DC Gate Supply
I
OUT
To Vga DC Gate Supply
RF
IN
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended
Bonding pad positions
( Chip thickness : 100µm. All dimensions are in micrometers )
Ref. : DSCHR22962147 25-May-02
4/5
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHR2296
Ordering Information
Chip form
:
CHR2296-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHR22962147 25-May-02
5/5
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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