UD3001K [UNITPOWER]
P-Ch 30V Fast Switching MOSFETs; P沟道30V的快速开关MOSFET
| 型号： | UD3001K |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | P-Ch 30V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：769K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UD3001K
P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UD3001K is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications .
BVDSS
RDS(ON)
ID
-30V
52mΩ
-3.3A
Applications
The UD3001K meet the RoHS and Green Product
requirement , with full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
-30
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
V
±20
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
-3.8
-3.1
-3.3
-2.7
A
A
-17
A
PD@TA=25℃
PD@TA=70℃
TSTG
Total Power Dissipation3
Total Power Dissipation3
1.32
0.84
1
W
W
℃
℃
0.64
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
Unit
℃/W
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
125
95
RθJA
---
RθJC
---
80
1
UD3001K
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-30
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=-1mA
VGS=-10V , ID=-3A
-0.023
42
---
V/℃
---
52
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=-4.5V , ID=-2A
---
75
90
VGS(th)
Gate Threshold Voltage
-1.2
---
-1.6
4
-2.5
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
---
---
-1
IDSS
Drain-Source Leakage Current
uA
---
---
-5
V
GS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
±100
---
nA
S
VDS=-5V , ID=-3A
---
11
Qg
---
6.4
2.3
1.9
2.8
8.4
39
9.0
3.2
2.7
5.6
15.1
78.0
12.0
816
140
112
VDS=-15V , VGS=-4.5V , ID=-3A
nC
Qgs
Qgd
Td(on)
Tr
---
---
Turn-On Delay Time
Rise Time
---
VDD=-15V , VGS=-10V , RG=3.3Ω,
---
ns
ID=-3A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
---
6
Ciss
Coss
Crss
Input Capacitance
---
583
100
80
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
Typ.
---
Max.
-3.3
-17
-1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
---
---
A
---
---
V
---
7.8
2.5
---
nS
nC
IF=-3A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD3001K
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
165
135
105
75
ID=-3A
45
2
4
6
8
10
-VGS (V)
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
10
8
6
T =150
T =25
℃
J
℃
J
4
2
0
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
1.5
1.8
1.4
1.0
0.6
0.2
1.0
0.5
0.0
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
℃
J
℃
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs TJ
3
UD3001K
P-Ch 30V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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