UM3001 [UNITPOWER]
P-Ch 30V Fast Switching MOSFETs; P沟道30V的快速开关MOSFET
| 型号： | UM3001 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | P-Ch 30V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：821K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UM3001
P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UM3001 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDS(ON)
ID
-30V
42mΩ
-6A
Applications
The UM3001 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
SOP8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
V
VDS
Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Gate-Source Voltage
±20
-6
V
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
A
-4
A
-12
A
EAS
Single Pulse Avalanche Energy3
59
mJ
A
IAS
Avalanche Current
19
PD@TC=25℃
TSTG
Total Power Dissipation4
2.08
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
85
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
RθJC
---
60
1
UM3001
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-30
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=-1mA
VGS=-10V , ID=-6A
-0.085
35
---
V/℃
---
42
78
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=-4.5V , ID=-3A
---
65
VGS(th)
Gate Threshold Voltage
-1.0
---
-1.5
0.375
---
V
VGS=VDS , ID =-250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
---
1
IDSS
Drain-Source Leakage Current
uA
---
---
5
V
GS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
±100
---
nA
S
VDS=-10V , ID=-6A
---
6
Qg
---
6.4
2.7
3.1
9
---
VDS=-20V , VGS=-4.5V , ID=-6A
nC
Qgs
Qgd
Td(on)
Tr
---
---
---
---
Turn-On Delay Time
Rise Time
---
---
VDD=-12V , VGS=-10V , RG=3.3Ω,
---
16.6
21
---
ns
ID=-5A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
---
---
21.6
645
272
105
---
Ciss
Coss
Crss
Input Capacitance
---
---
VDS=-25V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
---
---
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
16
---
---
mJ
VDD=-25V , L=0.1mH , IAS=-10A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
-6
Unit
A
IS
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
VG=VD=0V , Force Current
ISM
VSD
---
---
-12
-1.2
A
VGS=0V , IS=-6A , TJ=25℃
---
---
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-19A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM3001
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
10
144
117
90
ID=-10A
8
VGS=-10V
VGS=-7V
6
4
2
0
VGS=-5V
VGS=-4.5V
VGS=-3V
63
36
0
0.5
1
1.5
2
2
4
6
8
10
-VDS , Drain-to-Source Voltage (V)
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
8
10
8
VDS=-20V
ID=-12A
T =150
T =25
℃
J
℃
J
6
6
4
4
2
2
0
0
0
4
8
12
0.2
0.4
0.6
0.8
1
QG , Total Gate Charge (nC)
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
2.0
1.5
1.0
0.5
1.8
1.4
1
0.6
0.2
-50
25
100
175
-50
0
50
100
150
T ,Junction Temperature (
)
℃
T , Junction Temperature ( )
℃
J
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
UM3001
P-Ch 30V Fast Switching MOSFETs
1000
100
10
100
10
1
F=1.0MHz
Ciss
Coss
Crss
100us
1ms
10ms
100ms
0
T =25
℃
C
DC
Single Pulse
0
0.1
1
10
100
1
5
9
13
17
21
25
-VDS Drain to Source Voltage(V)
-VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
PDM
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
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