MMDT8150G-AL6-R [UTC]
LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR; 低VCESAT NPN外延平面晶体管
| 型号： | MMDT8150G-AL6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总2页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMDT8150
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
LOW VCESAT NPN EPITAXIAL
PLANAR TRANSISTOR
DESCRIPTION
The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It
has low VCE(SAT) performance and the transistor elements are
independent to eliminate interference.
FEATURES
* Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA
* Transistor elements are independent to eliminate interference.
* Mounting cost and area can be cut in half.
EQUIVALENT CIRCUIT
6
5
4
Tr1
Tr2
1
2
3
ORDERING INFORMATION
Ordering Number
Lead Free
Package
SOT-363
Packing
Halogen Free
MMDT8150G-AL6-R
MMDT8150L-AL6-R
Tape Reel
MMDT8150L-AL6-R
(1) R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Lead Free
(2) AL6: SOT-363
(3) Halogen Free, L: Lead Free
MARKING
T81
G: Halogen Free
L: Lead Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 2
QW-R218-017.a
MMDT8150
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
40
25
V
6
800
V
mA
A
ICP
1.5 (Note 2)
200 (total) (Note 3)
150
PD
mW
°C
°C
Junction Temperature
Storage Temperature
TJ
TSTG
-55~+150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse, PW=10ms
3. 150mW per element must not be exceeded.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=100µA, IE=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
40
25
6
V
V
IC=2mA, IB=0
IE=100µA, IC=0
V
VCB=30V, IE=0
0.5
0.5
60
µA
µA
mV
V
Emitter Cut-Off Current
IEBO
VEB=6V, IC=0
VCE(SAT)
VCE(SAT)
VCE(SAT)
1
2
3
IC=50mA, IB=2.5mA
IC=400mA, IB=20mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=1V, IC=500mA
VCE=2V, IC=50mA
VCE=5V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
40
Collector-Emitter Saturation Voltage
(Note 1)
0.2 0.3
0.3 0.5
1
V
Base-Emitter Voltage
DC Current Gain
VBE(ON)
FE1
V
h
180
40
560
hFE
hFE
fT
2
3
82
Current Gain-Bandwidth Product
Output Capacitance
150
15
MHz
pF
COBO
Note: 1. Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R218-017.a
www.unisonic.com.tw
相关型号：
MMDTA06-7
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-6
DIODES
MMDV0125J1230000D210
CAPACITOR, METALLIZED FILM, POLYESTER, 0.012uF, THROUGH HOLE MOUNT, RADIAL LEADED
KEMET
©2020 ICPDF网 联系我们和版权申明