UT2309G-AE3-R [UTC]

P-CHANNEL ENHANCEMENT MODE; P沟道增强模式


型号：	UT2309G-AE3-R
厂家：	Unisonic Technologies
描述：	P-CHANNEL ENHANCEMENT MODE P沟道增强模式
文件：	总4页 (文件大小：219K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

UT2309

Power MOSFET

P-CHANNEL ENHANCEMENT

MODE

DESCRIPTION

The UT2309 is P-channel power MOSFET, designed with high

density cell with fast switching speed, ultra low on-resistance and

excellent thermal and electrical capabilities.

Used in commercial and industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-23

Packing

Lead Free

Halogen Free

UT2309G-AE3-R

UT2309L-AE3-R

Tape Reel

MARKING

23H

L: Lead Free

G: Halogen Free

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QW-R502-148.E

UT2309

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

-30

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 1, 2)

Total Power Dissipation

Junction Temperature

-3.7

I_DM

-12

P_D

1.38

°C

T_J

+150

Storage Temperature

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

°C/W

Junction to Ambient (Note 3)

θ_JA

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

BV_DSS

I_DSS

V_GS=0 V, I_D=-250 µA

V_DS=-30V, V_GS=0V

V_GS= ±20V, V_DS=0V

-30

-0.5 uA

I_GSS

ΔBV_DSS/ΔT_JReference to 25°C, I_D=-1mA

-0.02

V/°C

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=-250uA

V_GS=-10V, I_D=-3A

V_GS=-4.5V, I_D=-2.6A

-1

-3

mΩ

Static Drain-Source On-Resistance (Note 2)

120 mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

C_OSS

C_RSS

412 660 pF

Output Capacitance

V_GS=0V,V_DS=-25V,f=1.0MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

Turn-ON Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

V_DS=-15V,I_D=-1A,R_G=3.3Ω,

_GS=-10V,R_D=15Ω

Turn-OFF Delay Time

Turn-OFF Fall Time

Total Gate Charge (Note 2)

Gate-Source Charge

Q_G

V_DS=-24V, V_GS=-4.5V,

I_D=-3A

Q_GS

Q_GD

Gate-Drain Charge

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage

V_SD

t_RR

I_S=-1A, V_GS=0V

I_S=-3A, V_GS=0V,

dI/dt=-100A/μs

-0.76 -1.2

Reverse Recovery Time

Reverse Recovery Charge

Q_RR

Notes: 1. Pulse width limited by T_J(MAX)

2. Pulse width ≤300us , duty cycle ≤2%.

3. Surface mounted on 1 in ²copper pad of FR4 board.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-148.E

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UT2309

Power MOSFET

TYPICAL CHARACTERISTICS

Typical Output Characteristics

-10V

T_A=150°С

-10V

T_A=25°С

-7.0V

-5.0V

-4.5V

V_GS=-3.0V

Drain-to-Source Voltage, -V_DS(V)

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UT2309

Power MOSFET

TYPICAL CHARACTERISTICS(Cont.)

Maximum Safe Operating Area

Effective Transient Thermal Impedance

100

Duty Factor=0.5

0.2

0.1

0.01

0.05

P_DM

1ms

0.01

10ms

Duty Factor=T/t

Peak T_J=P_DM/R_thJA+T_A

R_thJA=270°С/W

0.1

Single Pulse

T_A=25

Single Pulse

100ms

0.01

0.001

0.1

100

0.0001 0.001 0.01 0.1

10 100 1000

Drain-to-Source Voltage, -V_DS(V)

Pulse Width, t (s)

Gate Charge Circuit

Switching Time Circuit

V_GS

V_DS

90％

Q_G

-4.5V

Q_GS

Q_GD

10％

V_GS

Charge

t_D(ON)t_R

t_F

t_D(OFF)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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