UT2312G-AE3-R [UTC]
20V N-CHANNEL ENHANCEMENT MODE MOSFET; 20V N沟道增强型MOSFET
| 型号： | UT2312G-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总3页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2312
Power MOSFET
20V N-CHANNEL
ENHANCEMENT MODE MOSFET
DESCRIPTION
The UT2312 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON) = 33 mΩ @VGS = 4.5 V
* RDS(ON) = 40 mΩ @VGS = 2.5 V
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free
Halogen Free
1
S
2
G
3
D
UT2312L-AE3-R
UT2312G-AE3-R
Tape Reel
MARKING
23N
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-205.D
UT2312
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
20
±8
V
Continuous Drain Current
Pulsed Drain Current
5
A
IDM
15
A
Power Dissipation (Ta =25°C)
Junction Temperature
Storage Temperature
PD
1.25
+150
-55 ~ +150
W
°C
°C
TJ
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
MIN
TYP
MAX
100
UNIT
°C/W
θJA
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
ON CHARACTERISTICS
BVDSS
IDSS
VGS =0V, ID =250 µA
20
V
VDS=20 V, VGS =0 V
1.0
µA
IGSS
VGS =±8V, VDS = 0 V
±100 nA
Gate-Threshold Voltage
VGS(TH)
RDS(ON)
ID(ON)
gFS
VDS =VGS, ID =250 µA
VGS =4.5V, ID =5.0 A
VGS =2.5 V, ID =4.0 A
VDS≥10 V, VGS = 4.5 V
VDS = 5V, ID = 5.0 A
0.45
15
V
25
35
33
40
mΩ
mΩ
A
Static Drain–Source On–Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
20
S
CISS
COSS
CRSS
900
140
100
pF
pF
pF
VDS =10V, VGS =0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
11
1.4
2.2
15
40
48
31
14
nC
nC
nC
ns
ns
ns
ns
VDS =10V, VGS =4.5V, ID =3.6A
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
25
60
70
45
VDD=10V, ID =1A, RL =10ꢀ
GEN =4.5V, RG =6ꢀ
V
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Max. Diode Forward Current
VSD
IS
IS=1.0 A,VGS=0 V
0.75
1.2
1.6
V
A
Notes: Pulse test; pulse width ≤300μs, duty cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-205.D
www.unisonic.com.tw
UT2312
Power MOSFET
TEST CIRCUIT AND WAVEFORM
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-205.D
www.unisonic.com.tw
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