UT2311_15 [UTC]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET;
| 型号： | UT2311_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总3页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2311
Preliminary
Power MOSFET
20V P-CHANNEL
ENHANCEMENT MODE
MOSFET
FEATURES
* Extremely low on-resistance due to high density cell
* Perfect thermal performance and electrical capability
* With advanced technology of trench process
* Halogen Free
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number
UT2311G-AE3-R
Package
SOT-23
Packing
1
2
3
S
G
D
Tape Reel
MARKING
23MG
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-365.a
UT2311
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-20
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
±8
V
-4
A
IDM
-20
A
PD
1.25
W
°C
°C
TJ
+150
-55 ~ +150
TSTG
Note:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
100
UNIT
°C/W
Junction to Ambient (PCB mounted)
θJA
Note: Surface Mounted on FR4 board t ≤ 5sec.
ELECTRICAL CHARACTERISTICS (Ta = 25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS VGS =0V, ID =-250µA
-20
V
-1.0 µA
±100 nA
IDSS
IGSS
VDS =-16V,VGS =0V
VGS =±8V, VDS =0V
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-4.0 A
-0.45
-6
V
45
75
55
85
mΩ
mΩ
A
Static Drain-Source On-State Resistance RDS(ON)
VGS =-2.5V, ID =-2.5 A
On-State Drain Current
DYNAMIC PARAMETERSb
Input Capacitance
ID(ON) VDS ≥ -10V, VGS =-4.5V
CISS
970
485
160
pF
pF
pF
VDS =-6V, VGS =0 V, f =1.0MHz
Output Capacitance
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING PARAMETERSb
Turn-ON Delay Time
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
18
45
ns
ns
VDD =-4V, VGEN =-4.5V, ID =-1A
RL =4Ω, RG =6Ω
Turn-OFF Delay Time
Turn-OFF Fall-Time
95
ns
65
ns
Total Gate Charge
QG
8.5
1.5
2.1
12
nC
nC
nC
VGS =-4.5V, VDS =-6V, ID =-4.0A
Gate Source Charge
Gate Drain Charge
QGS
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
VGS =0 V, IS =-1.6A,
-0.8 -1.2
-1.6
V
A
IS
Note: Pulse test; pulse width ≤300μs, duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-365.a
www.unisonic.com.tw
UT2311
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit
Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-365.a
www.unisonic.com.tw
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