UT2311L-F-AE2-R [UTC]
Power Field-Effect Transistor,;
| 型号： | UT2311L-F-AE2-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2311-F
Power MOSFET
-4.7A, -20V P-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
FEATURES
* Extremely low on-resistance due to high density cell
* Perfect thermal performance and electrical capability with
advanced technology of trench process
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
UT2311G-AE2-R
S: Source D: Drain
1
2
3
UT2311L-AE2-R
SOT-23-3
G
S
D
Tape Reel
Note: Pin Assignment: G: Gate
MARKING
Year: K: 2016 (1H)
L: 2016 (2H)
M: 2017 (1H)
N: 2017 (2H)
S
Week: 01~26 (A~Z)
Lot Code
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R210-047.B
UT2311-F
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-20
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±8
V
Continuous Drain Current
Pulsed Drain Current
-4.7
A
IDM
-18.8
A
Power Dissipation (TC=25°C) (Note 2)
Junction Temperature
PD
1.25
W
°C
°C
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in 2 copper pad of FR4 board.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
80
UNIT
°C/W
Junction to Ambient (PCB mounted)
θJA
Note: Surface Mounted on FR4 board t ≤ 5 sec.
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
VGS =0V, ID =-250µA
-20
V
-1.0 µA
±100 nA
VDS =-16V,VGS =0V
VGS =±8V, VDS =0V
IGSS
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
-0.02
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-4.0 A
VGS =-2.5V, ID =-2.5 A
VGS =-1.8V, ID =-1.0 A
-0.3
-0.8
55
V
mΩ
mΩ
Static Drain-Source On-State Resistance
85
100 mΩ
DYNAMIC PARAMETERSb
Input Capacitance
CISS
COSS
CRSS
850
70
pF
pF
pF
VDS =-10V, VGS =0V, f =1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERSb
Total Gate Charge
55
QG
QGS
QGD
tD(ON)
tR
9.6
1.6
nC
nC
nC
ns
ns
ns
ns
VGS =-10V, VGS =-4.5V, ID =-3.0A
Gate Source Charge
Gate Drain Charge
2.0
Turn-ON Delay Time
Turn-ON Rise Time
6.0
VDD =-10V, VGS =-4.5V, ID =-1.0A
RG =25Ω
21.6
51
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
13.8
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
-4.7
A
Current
VG=VD=0V , Force Current
IS=-1.0A, VGS=0V, TJ = 25°C
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
ISM
-18.8
-1.0
A
V
VSD
Note: Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
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UT2311-F
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit
Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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UT2311-F
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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UT2311-F
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
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