UTC2SA1015 [UTC]
PNP EPITAXIAL SILICON TRANSISTOR; PNP外延硅晶体管
| 型号： | UTC2SA1015 |
| 厂家： | 
Unisonic Technologies |
| 描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SA1015
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815
1
TO-92
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
RATING
-50
UNIT
V
V
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
-50
-5
400
-150
V
mW
mA
mA
°C
Ic
IB
Base current
-50
Junction Temperature
Storage Temperature
Tj
TSTG
125
-65 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=-100µA,IE=0
Ic=-10mA,IB=0
IE=-10µA,Ic=0
MIN TYP MAX UNIT
-50
-50
-5
V
V
V
nA
nA
VCB=-50V,IE=0
VEB=-5V,Ic=0
-100
-100
400
Emitter cut-off current
DC current gain(note)
IEBO
hFE1
hFE2
VCE=-6V,Ic=-2mA
70
25
VCE=-6V,Ic=-150mA
Ic=-100mA,IB=-10mA
Ic=-100mA,IB=-10mA
VCE=-10V,Ic=-1mA
VCB=-10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=-6V
RG=1kΩ,f=100Hz
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
VCE(sat)
VBE(sat)
fT
Cob
NF
-0.1
-0.3
-1.1
V
V
80
MHz
pF
dB
4.0
0.5
7.0
6
Noise Figure
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-004,A
UTC2SA1015
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
Y
G
RANGE
120-240
200-400
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
-50
-40
3
2
10
-10
VCE=-6V
VCE=-6V
I
I
B
B
=-300
=-250
µ
A
A
2
10
1
-10
-30
-20
µ
IB=-200 µA
1
0
10
-10
I
I
B
=-150
=-100
µA
µA
µA
-10
0
B
I
B
=-50
-16
0
-1
-10
10
-0
-4
-8
-12
-20
-1
-10
0
1
2
3
0
-0.2
-0.4
-0.6
-0.8
-1.0
-10
-10
-10
-10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
3
1
2
10
-10
10
-1
Ic=10*I
B
-10
VCE=-6V
f=1MHz
2
0
VBE(sat)
IE=0
10
-10
1
10
-1
-10
1
0
10
10
VCE(sat)
-1
10
0
-2
-10
10
-1
-10
0
1
2
3
-10
-1
-10
0
1
2
0
1
2
3
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-004,A
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