UTC2SA928A [UTC]
PNP EPITAXIAL SILICON TRANSISTOR; PNP外延硅晶体管
| 型号： | UTC2SA928A |
| 厂家： | 
Unisonic Technologies |
| 描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SC2328A
1
TO-92NL
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
RATING
UNIT
V
V
V
W
-30
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
-30
-5
1
-2
Ic
A
Junction Temperature
Storage Temperature
Tj
TSTG
150
-55 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=-100µA,IE=0
MIN TYP MAX UNIT
-30
-30
-5
V
V
Ic=-10mA,IB=0
IE=-1mA,Ic=0
VCB=-30V,IE=0
V
nA
nA
-100
-100
320
-1
Emitter cut-off current
DC current gain(note)
Base-emitter on voltage
Collector-emitter saturation voltage
Output capacitace
IEBO
hFE
VBE(on)
VCE(sat)
Cob
VBE=-5V,Ic=0
VCE=-2V,Ic=-500mA
VCE=-2V,Ic=-500mA
Ic=-1.5A,IB=-0.03A
VCB =-10V, IE =0,f=1MHz
VCE=-2V,Ic=-500mA
100
V
V
-2
48
120
pF
MHz
Current gain bandwidth product
fT
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
100-200
160-320
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R211-009,A
UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC CURVES
FIG.1 STATIC
FIG.2 BASE-EMITTER ON VLOTAGE
CHARACTERISTIC
-1400
-1400
-1200
-1000
-800
-600
-400
-200
0
I
I
B
=-7mA
=-6mA
-1200
-1000
-800
-600
-400
-200
0
VCE=-2V
B
I
I
B
=-5mA
=-4mA
B
I
I
I
B=-3mA
B=-2mA
B=-1mA
0
-2 -4 -6 -8 -10 -12 -14 -16
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE(V),BASE-EMITTER VOLTAGE
VCE(V),COLLECTOR-EMITTER VOLTAGE
FIG.3 DC CURRENT GAIN
FIG.4 COLLECTOR-EMITTER SATURATION VOLTAGE
-3
1000
-1
500
300
-0.5
-0.3
Ic=50l
B
VCE=-2V
Ta=25°C
100
-0.1
50
30
-0.05
-0.03
10
-0.01
-3000
-3000
-1 -3 -10 -30 -100 -300 -1000
Ic(mA),COLLECTOR CURRENT
-1 -3 -10 -30 -100 -300 -1000
Ic(mA),COLLECTOR CURRENT
FIG.5 POWER DERATING
FIG.6 SAFE OPERATING AREA
-5
-3
1.2
1.0
0.8
0.6
0.4
0.2
0
Ic(MAX) PULSE
Ic(MAX)
1ms
-1
Ta=25°C
1s
D.C
OPERATION
-0.5
-0.3
-0.1
-0.05
-0.03
V
CEO MAX
-0.01
0
20 40 60 80 100 120 140 160
Ta(°C),AMBIENT TEMPERATURE
-0.1 -0.3-0.5 -1 -3 -5 -10 -30-50 -100
CE(V), COLLECTOR EMITTER VOLTAGE
V
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R211-009,A
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