10N50KG-TF3-T [UTC]
Power Field-Effect Transistor,;
| 型号： | 10N50KG-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
10N50K-MT
Power MOSFET
10A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N50K-MT is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 10N50K-MT is generally applied in high efficiency
switch mode power supplies, active power factor correction and
electronic lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) ≤ 0.68Ω @ VGS=10V, ID=5.0A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
10N50KL-TF2-T
Halogen Free
1
2
D
D
3
S
S
10N50KG-TF2-T
10N50KG-TF3-T
TO-220F2
TO-220F
G
G
Tube
Tube
10N50KL-TF3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
10N50KG-TF2-T
(1) T: Tube
(1)Packing Type
(2)Package Type
(3)Green Package
(2) TF2: TO-220F2, TF3: TO-220F
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
www.unisoniccom.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
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10N50K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (TC=25°C)
Pulsed (Note 3)
10 (Note 2)
20 (Note 2)
10
A
Drain Current
IDM
A
Avalanche Current (Note 3)
IAR
A
Avalanche Energy
Single Pulsed (Note 4)
EAS
245
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 5)
Power Dissipation
dv/dt
4.5
48
PD
Derate above 25°C
0.38
W/°C
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
4. L = 10mH, IAS = 7A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
5. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.58
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10N50K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
500
2.0
V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
10
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=5A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.68
ꢀ
CISS
COSS
CRSS
1322
140
7.5
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
35
7.6
4
nC
nC
nC
ns
ns
ns
ns
VDS=100V, VGS=10V, ID=10A,
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
IG=1mA
16.8
82
VDD=100V, VGS=10V, ID=10A,
RG=25ꢀ
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
58.2
19.6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
10
20
A
A
IS=10A, VGS=0V
IS=10A, VGS=0V,
dIF/dt=100A/µs
1.4
V
352
4.4
nS
μC
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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10N50K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
VDS
QGS
QGD
300nF
VGS
DUT
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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10N50K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
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Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
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TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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