20N50G-T3P-T [UTC]
20A, 500V N-CHANNEL POWER MOSFET;
| 型号： | 20N50G-T3P-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 20A, 500V N-CHANNEL POWER MOSFET |
| 文件： | 总4页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
20N50
Preliminary
Power MOSFET
20A, 500V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC 20N50 is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum
on-state resistance, high switching speed and low leakage current,
etc.
The UTC 20N50 is suitable for switching regulator application, etc.
FEATURES
* RDS(on)=0.21Ω @VGS=10V, ID=10A
* High switching speed
* Low leakage current
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-3P
Packing
Tube
Lead Free
Halogen Free
20N50G-T3P-T
1
2
3
20N50L-T3P-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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20N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
ID
±30
V
Continuous
Pulsed
20
A
Drain Current (Note 2)
Avalanche Current
Avalanche Energy
IDM
80
A
IAR
20
A
Single Pulsed (Note 3)
Repetitive (Note 4)
EAS
EAR
PD
960
mJ
mJ
W
15
Power Dissipation (TC=25°C)
Channel Temperature
150
Tch
150
°C
°C
Storage Temperature Range
TSTG
-55~+150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Ensure that the channel temperature does not exceed 150°C.
3. VDD=90V, Tch=25°C (initial), L=4.08mH, RG=25ꢀ, IAR=20A.
4. Repetitive rating: pulse width limited by maximum channel temperature This transistor is an
electrostatic-sensitive device. Handle with care.
THERMAL CHARACTERISTICS THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
50
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
0.833
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20N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=10mA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
500
V
100 µA
+10 µA
-10 µA
V
Forward
Reverse
Gate-Source Leakage Current
IGSS
VGS=-30V, VDS=0V
IG=±10µA, VDS=0V
Gate-Source Breakdown Voltage
ON CHARACTERISTICS
Gate Threshold Voltage
V(BR)GSS
±30
2.0
VGS(TH)
RDS(ON)
VDS=10V, ID=1mA
VGS=10V, ID=10A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.21 0.27
ꢀ
CISS
COSS
CRSS
3400
320
25
pF
pF
pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
70
45
nC
nC
nC
ns
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
VGS=10V, VDD≈400V, ID=20A
25
130
70
Rise Time
ns
Turn-OFF Delay Time
tD(OFF)
280
ns
Fall-Time
tF
70
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
(Note)
IS
20
80
A
A
Maximum Body-Diode Pulsed Current
(Note)
ISM
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
tRR
IS=20A, VGS=0V
1.7
1300
V
ns
µC
IS=20A, VGS=0V, dIDR/dt=100A/µs
QRR
20
Note: Ensure that the channel temperature does not exceed 150°C.
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20N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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