2SC3647SL-AB3-R [UTC]
Transistor;型号: | 2SC3647SL-AB3-R |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总4页 (文件大小:134K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
2SC3647
NPN EPITAXIAL SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
APPLICATIONS
ꢀ FEATURES
1
* Adoption of FBET, MBIT processes
* High breakdown voltage and large current capacity
* Fast switching time
* Very small size marking it easy to provide high - density,
small-sized hybrid ICs
SOT-89
*Pb-free plating product number: 2SC3647L
ꢀ PIN CONFIGURATION
PIN NO.
PIN NAME
Emitter
1
2
3
Collector
Base
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Tape Reel
Normal
Lead free
2SC3647-AB3-R 2SC3647L-AB3-R
SOT-89
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R208-039,A
2SC3647
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector to Base Voltage
SYMBOL
RATINGS
UNIT
V
VCBO
VCEO
VEBO
IC
120
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
100
V
6
V
2
3
A
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
ICP
A
PC
500
mW
°C
TJ
150
°C
TSTG
-40 ~ +150
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Collector Cutoff Curent
Emitter Cutoff Curent
Output Capacitance
DC Current Gain
SYMBOL
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
TEST CONDITIONS
IC = 1A, IB = 100mA
MIN
TYP
0.13
0.85
MAX UNIT
0.4
1.2
V
V
IC = 1A, IB = 100mA
IC = 10µA, IE =0
IC = 1mA, RBE =∞
IE = 10µA, IC=0
120
100
6
V
V
V
VCB = 100V, IE =0
100
100
nA
nA
pF
IEBO
VEB = 4V, IC =0
Cob
VCB = 10V, f =1MHz
16
hFE
VCE = 5V, IC = 100mA
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VCE = 10V, IC = 100mA
100
400
Turn-ON Time
tON
80
1000
50
ns
ns
Storage Time
tSTG
Fall Time
tF
ns
Gain-Bandwidth Product
fT
120
MHz
CLASSIFICATION OF hFE
■
RANK
R
S
T
RANGE
100 ~ 200
140 ~ 280
200 ~ 400
■ SWITCHING TIME TEST CIRCUIT
PW=20μS
DC≤1%
IB1
RB
INPUT
IB2
VR
RL
50
+
100μ
+
470μ
-5V
50V
10IB1= -10IB2=IC=0.7A
Unit (Resistance:Ω, Capacitance:F )
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R208-039,A
2SC3647
■ TYPICAL CHARACTERICS
NPN EPITAXIAL SILICON TRANSISTOR
IC - VCE
IC - VCE
2.0
1.0
A
m
A
m
A
5
.
4
m
0
5
A
m
.0
0
.
4
5
mA
.5
3
1.6
1.2
0.8
0.6
A
.0m
3
A
m
0
.5mA
2
1
A
.0m
2
A
m
5
0.8
0.4
1.5mA
3mA
2mA
1mA
1.0mA
0.4
0
0.2
0
0.5mA
IB = 0
IB = 0
4
1
2
3
5
10
20
30
40
50
0
0
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
IC - VBE
hFE - IC
2.4
2.0
1000
VCE = 5V
VCE = 5V
7
5
1.6
1.2
0.8
0.4
0
3
2
℃
℃
5
5
2
2
-
℃
100
5
℃
℃
7
5
5
2
=
2
7
5
-
a
T
3
70.01
2
3
5 7
2
3
5 7
1.0
2 3
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0
Base to Emitter Voltage, VBE (V)
Collector Current, IC (A)
cob - VCB
VCE (sat) - IC
100
7
1000
F = 1MHz
IC/IB = 10
7
5
5
3
2
3
2
100
7
℃
5
2
10
5
7
5
3
2
-25℃
3
10
7 1.0
2
3
5
7
2
3
5 7
2
7 0.01
2
3
5 7
2
3
5 7
1.0
2
3
10
100
0.1
Collector to Base Voltage, VCB (V)
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R208-039,A
2SC3647
NPN EPITAXIAL SILICON TRANSISTOR
■ TYPICAL CHARACTERICS(Cont.)
VBE (sat) - IC
A S O
10
5
3
2
ICP
IC
1
IC/IB = 10
m
s
1
7
0
m
s
1
0
0
5
m
1.0
7
5
3
2
s
D
3
2
C
O
p
e
r
a
t
i
o
n
0.1
7
5
3
2
1.0
7
One Pulse - Ta = 25℃
Mounted on ceramic board
5
0.01
7 (250mm × 0.8mm)
3
5
7 0.01
2
3
5
7
2
3
5
7
2
32
5
7 1.0
2
3
5
7
2
3
5
7
100
2
0.1
1.0
10
Collector Current, IC (A)
Collector to Emitter Voltage, VCE (V)
PC - Ta
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
n
f
in
i
t
e
h
e
0.4
0.2
0
a
t
s
in
k
20
40
60
80 100 120 140 160
0
Ambient Temperature, Ta (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R208-039,A
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