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2SC3647TL-AB3-R [UTC]

Transistor;
2SC3647TL-AB3-R
型号： 2SC3647TL-AB3-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Transistor
文件： 总4页 (文件大小：134K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO.,  
2SC3647  
NPN EPITAXIAL SILICON TRANSISTOR  
HIGH-VOLTAGE SWITCHING  
APPLICATIONS  
ꢀ FEATURES  
1
* Adoption of FBET, MBIT processes  
* High breakdown voltage and large current capacity  
* Fast switching time  
* Very small size marking it easy to provide high - density,  
small-sized hybrid ICs  
SOT-89  
*Pb-free plating product number: 2SC3647L  
ꢀ PIN CONFIGURATION  
PIN NO.  
PIN NAME  
Emitter  
1
2
3
Collector  
Base  
ꢀ ORDERING INFORMATION  
Order Number  
Package  
Packing  
Tape Reel  
Normal  
Lead free  
2SC3647-AB3-R 2SC3647L-AB3-R  
SOT-89  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co.,  
1
QW-R208-039,A  
2SC3647  
NPN EPITAXIAL SILICON TRANSISTOR  
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)  
PARAMETER  
Collector to Base Voltage  
SYMBOL  
RATINGS  
UNIT  
V
VCBO  
VCEO  
VEBO  
IC  
120  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
100  
V
6
V
2
3
A
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
ICP  
A
PC  
500  
mW  
°C  
TJ  
150  
°C  
TSTG  
-40 ~ +150  
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)  
PARAMETER  
C-E Saturation Voltage  
B-E Saturation Voltage  
C-B Breakdown Voltage  
C-E Breakdown Voltage  
E-B Breakdown Voltage  
Collector Cutoff Curent  
Emitter Cutoff Curent  
Output Capacitance  
DC Current Gain  
SYMBOL  
VCE(sat)  
VBE(sat)  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
TEST CONDITIONS  
IC = 1A, IB = 100mA  
MIN  
TYP  
0.13  
0.85  
MAX UNIT  
0.4  
1.2  
V
V
IC = 1A, IB = 100mA  
IC = 10µA, IE =0  
IC = 1mA, RBE =∞  
IE = 10µA, IC=0  
120  
100  
6
V
V
V
VCB = 100V, IE =0  
100  
100  
nA  
nA  
pF  
IEBO  
VEB = 4V, IC =0  
Cob  
VCB = 10V, f =1MHz  
16  
hFE  
VCE = 5V, IC = 100mA  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
VCE = 10V, IC = 100mA  
100  
400  
Turn-ON Time  
tON  
80  
1000  
50  
ns  
ns  
Storage Time  
tSTG  
Fall Time  
tF  
ns  
Gain-Bandwidth Product  
fT  
120  
MHz  
CLASSIFICATION OF hFE  
■
RANK  
R
S
T
RANGE  
100 ~ 200  
140 ~ 280  
200 ~ 400  
■ SWITCHING TIME TEST CIRCUIT  
PW=20μS  
DC≤1%  
IB1  
RB  
INPUT  
IB2  
VR  
RL  
50  
+
100μ  
+
470μ  
-5V  
50V  
10IB1= -10IB2=IC=0.7A  
Unit (Resistance:Ω, Capacitance:F )  
UNISONIC TECHNOLOGIES CO., LTD  
2
www.unisonic.com.tw  
QW-R208-039,A  
2SC3647  
■ TYPICAL CHARACTERICS  
NPN EPITAXIAL SILICON TRANSISTOR  
IC - VCE  
IC - VCE  
2.0  
1.0  
A
m
A
m
A
5
.
4
m
0
5
A
m
.0  
0
.
4
5
mA  
.5  
3
1.6  
1.2  
0.8  
0.6  
A
.0m  
3
A
m
0
.5mA  
2
1
A
.0m  
2
A
m
5
0.8  
0.4  
1.5mA  
3mA  
2mA  
1mA  
1.0mA  
0.4  
0
0.2  
0
0.5mA  
IB = 0  
IB = 0  
4
1
2
3
5
10  
20  
30  
40  
50  
0
0
Collector to Emitter Voltage, VCE (V)  
Collector to Emitter Voltage, VCE (V)  
IC - VBE  
hFE - IC  
2.4  
2.0  
1000  
VCE = 5V  
VCE = 5V  
7
5
1.6  
1.2  
0.8  
0.4  
0
3
2
℃
℃
5
5
2
2
-
℃
100  
5
℃
℃
7
5
5
2
=
2
7
5
-
a
T
3
70.01  
2
3
5 7  
2
3
5 7  
1.0  
2 3  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0.1  
0
Base to Emitter Voltage, VBE (V)  
Collector Current, IC (A)  
cob - VCB  
VCE (sat) - IC  
100  
7
1000  
F = 1MHz  
IC/IB = 10  
7
5
5
3
2
3
2
100  
7
℃
5
2
10  
5
7
5
3
2
-25℃  
3
10  
7 1.0  
2
3
5
7
2
3
5 7  
2
7 0.01  
2
3
5 7  
2
3
5 7  
1.0  
2
3
10  
100  
0.1  
Collector to Base Voltage, VCB (V)  
Collector Current, IC (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3
www.unisonic.com.tw  
QW-R208-039,A  
2SC3647  
NPN EPITAXIAL SILICON TRANSISTOR  
■ TYPICAL CHARACTERICS(Cont.)  
VBE (sat) - IC  
A S O  
10  
5
3
2
ICP  
IC  
1
IC/IB = 10  
m
s
1
7
0
m
s
1
0
0
5
m
1.0  
7
5
3
2
s
D
3
2
C
O
p
e
r
a
t
i
o
n
0.1  
7
5
3
2
1.0  
7
One Pulse - Ta = 25℃  
Mounted on ceramic board  
5
0.01  
7 (250mm × 0.8mm)  
3
5
7 0.01  
2
3
5
7
2
3
5
7
2
32  
5
7 1.0  
2
3
5
7
2
3
5
7
100  
2
0.1  
1.0  
10  
Collector Current, IC (A)  
Collector to Emitter Voltage, VCE (V)  
PC - Ta  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I
n
f
in  
i
t
e
h
e
0.4  
0.2  
0
a
t
s
in  
k
20  
40  
60  
80 100 120 140 160  
0
Ambient Temperature, Ta (℃)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4
www.unisonic.com.tw  
QW-R208-039,A  

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