4N60G-TQ2-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 4N60G-TQ2-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N60-N
Power MOSFET
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N60-N is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high RuggednessA
SYMBOL
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4N60-N
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
4N60G-TA3-T
4N60G-TF1-T
4N60G-TF2-T
4N60G-TF3T-T
4N60G-TF3-T
4N60G-TM3-T
4N60G-TMS-T
4N60G-TMS2-T
4N60G-TMS4-T
4N60G-TN3-R
4N60G-TND-R
4N60G-T2Q-T
4N60G-TQ2-R
4N60G-TQ2-T
4N60G-K08-5060-R
1
2
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
3
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
4
-
5
-
6
-
7
-
8
-
4N60L-TA3-T
4N60L-TF1-T
4N60L-TF2-T
4N60L-TF3T-T
4N60L-TF3-T
4N60L-TM3-T
4N60L-TMS-T
4N60L-TMS2-T
4N60L-TMS4-T
4N60L-TN3-R
4N60L-TND-R
4N60L-T2Q-T
4N60L-TQ2-R
4N60L-TQ2-T
-
TO-220
TO-220F1
TO-220F2
TO-220F3
TO-220F
TO-251
G
G
G
G
G
G
G
G
G
G
G
G
G
G
S
Tube
Tube
-
-
-
-
-
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tape Reel
Tape Reel
Tube
-
-
-
-
-
TO-252D
TO-262
-
-
-
-
-
-
-
-
-
-
TO-263
Tape Reel
Tube
-
-
-
-
-
TO-263
DFN-8(5×6)
G
D
D
D
D
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TMS2: TO-251S2, TN3: TO-252,
TMS4: TO-251S4, TND: TO-252D, T2Q: TO-262,
TQ2: TO-263, K08-5060: DFN-8(5×6)
4N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
PACKAGE
MARKING
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
TO-251S
DFN-8(5×6)
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4N60-N
Power MOSFET
PIN CONFIGURATION
DFN-8(5×6)
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4N60-N
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
16
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
260
mJ
mJ
V/ns
Avalanche Energy
EAR
10.6
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262/TO-263
dv/dt
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
106
50
Power Dissipation
PD
W
30
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°С
°С
°С
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
62.5
UNIT
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
62.5
62.5
TO-220F2
Junction to Ambient
θJA
°С/W
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
110
75
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
1.18
3.47
3.28
TO-220F2
Junction to Case
θJc
°С/W
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
2.5
4.17
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4N60-N
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
600
V
10
μA
Forward
Reverse
100 nA
-100 nA
V/°С
Gate-Source Leakage Current
IGSS
VGS = -30V, VDS = 0V
ID=250μA,Referenced to 25°C
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
2.1 2.5
V
VGS = 10 V, ID = 2.2A
Ω
CISS
COSS
CRSS
530 630 pF
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
70
25
90
40
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
35
55
ns
Turn-On Rise Time
70 110 ns
190 240 ns
100 130 ns
VDD = 300V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
80
5
nC
nC
nC
VDS= 480V,ID= 4.0A,
Gate-Source Charge
QGS
QGD
VGS= 10V (Note 1, 2)
Gate-Drain Charge
9
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
250
1.5
ns
VGS = 0 V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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4N60-N
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N60-N
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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4N60-N
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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