4N60G-TQ3-T [UTC]
4A, 600V N-CHANNEL POWER MOSFET; 4A ， 600V N沟道功率MOSFET
| 型号： | 4N60G-TQ3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 4A, 600V N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N60
Power MOSFET
4A, 600V N-CHANNEL
POWER MOSFET
1
1
TO-220F
TO-220
DESCRIPTION
The UTC 4N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
1
1
TO-220F1
TO-220F2
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
1
1
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF )
* Fast Switching Capability
TO-251
TO-252
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
1
1
TO-262
TO-263
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
3
Lead Free
Halogen Free
1
2
4N60L-TA3-T
4N60L-TF1-T
4N60L-TF2-T
4N60L-TF3-T
4N60L-TM3-T
4N60L-TN3-R
4N60L-TN3-T
4N60L-T2Q-T
4N60L-TQ3-R
4N60L-TQ3-T
4N60G-TA3-T
4N60G-TF1-T
4N60G-TF2-T
4N60G-TF3-T
4N60G-TM3-T
4N60G-TN3-R
4N60G-TN3-T
4N60G-T2Q-T
4N60G-TQ3-R
4N60G-TQ3-T
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
S
S
S
S
S
S
S
S
S
S
Tube
Tube
Tube
Tube
Tube
TO-252
Tape Reel
Tube
TO-252
TO-262
Tube
TO-263
Tape Reel
Tube
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-061,Q
4N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
Pulsed (Note 2)
ID
4.0
A
Drain Current
IDM
16
A
4N60
260
mJ
mJ
mJ
V/ns
Single Pulsed
(Note 3)
EAS
Avalanche Energy
4N60-E
200
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262/TO-263
EAR
10.6
4.5
dv/dt
106
TO-220F/TO-220F1
TO-220F2
36
Power Dissipation
PD
W
38
TO-251/ TO-252
50
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
62.5
62.5
62.5
83
UNIT
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2
Junction to Ambient
Junction to Case
θJA
°С/W
TO-251/ TO-252
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2
1.18
3.47
3.28
2.5
θJc
°С/W
TO-251/ TO-252
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4N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
600
V
10
μA
Forward
Reverse
100 nA
-100 nA
V/°С
Gate-Source Leakage Current
IGSS
VGS = -30V, VDS = 0V
ID=250μA,Referenced to 25°C
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
2.2 2.5
V
VGS = 10 V, ID = 2.2A
Ω
CISS
COSS
CRSS
520 670 pF
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
70
8
90
11
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
13
35
ns
Turn-On Rise Time
45 100 ns
VDD = 300V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
25
35
60
80
20
ns
ns
Turn-Off Fall Time
Total Gate Charge
QG
15
nC
nC
nC
VDS= 480V,ID= 4.0A,
Gate-Source Charge
QGS
QGD
3.4
7.1
VGS= 10V (Note 1, 2)
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
250
1.5
ns
V
GS = 0 V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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4N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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4N60
Power MOSFET
TYPICAL CHARACTERISTICS
On-State Characteristics
Transfer Characteristics
VGS
Top: 10V
10
10
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
25°С
1
5.0V
150°С
1
0.1
Notes:
Notes:
1. VDS=50V
2. 250µs Pulse Test
1. 250µs Pulse Test
2. TC=25°С
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VGS (V)
Drain-to-Source Voltage, VDS (V)
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4N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
1200
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
VDS=300V
VDS=480V
1000
800
Ciss
Notes:
1. VGS=0V
VDS=120V
Coss
6
600
400
200
2. f = 1MHz
4
2
Crss
Note: ID=4A
10
Total Gate Charge, QG (nC)
0
0
0.1
20
25
0
5
15
1
10
Drain-SourceVoltage, VDS (V)
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4N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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