4N70L-TF1-T [UTC]
4.4A, 700V N-CHANNEL POWER MOSFET; 4.4A ， 700V N沟道功率MOSFET
| 型号： | 4N70L-TF1-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 4.4A, 700V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N70
Power MOSFET
4.4A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N70 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.8Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 15nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
4N70L-TF1-T
4N70L-TF3-T
4N70L-TM3-T
Halogen Free
4N70G-TF1-T
4N70G-TF3-T
4N70G-TM3-T
1
2
3
S
S
S
TO-220F1
TO-220F
TO-251
G
G
G
D
D
D
Tube
Tube
Tube
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-340.D
4N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
700
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
ID
4.4
A
Drain Current
Pulsed (Note 2)
IDM
17.6
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
260
mJ
mJ
V/ns
Avalanche Energy
EAR
10.6
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-220F/TO-220F1
TO-251
36
Power Dissipation
PD
W
49
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 26.9mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
TO-220F/TO-220F1
TO-251
Junction to Ambient
Junction to Case
θJA
°С/W
110
TO-220F/TO-220F1
TO-251
3.47
θJc
°С/W
2.55
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 700 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
700
V
10 μA
Forward
Reverse
100
nA
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
ID = 250μA, Referenced to 25°C
-100
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
V/°С
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
2.6 2.8
V
VGS = 10 V, ID = 2.2 A
Ω
CISS
COSS
CRSS
520 670 pF
70 90 pF
VDS = 25 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
8
11 pF
tD(ON)
tR
tD(OFF)
tF
13 35
ns
Turn-On Rise Time
45 100 ns
VDD = 350V, ID = 4.4A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
25 60
35 80
ns
ns
Turn-Off Fall Time
Total Gate Charge
QG
15 20 nC
VDS= 560V, ID= 4.4A,
Gate-Source Charge
QGS
QGD
3.4
7.1
nC
nC
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
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QW-R502-340.D
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4N70
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS
VGS = 0 V, IS = 4.4 A
1.4
4.4
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
250
1.5
ns
VGS = 0 V, IS = 4.4 A,
dI/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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QW-R502-340.D
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4N70
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-340.D
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4N70
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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4N70
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs.
Gate Threshold Voltage
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
200 400 600 800 1000 1200 1400
1
0
2
3
4
5
6
7
Drain-Source Breakdown Voltage, BVDSS(V)
Gate Threshold Voltage, VTH (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-340.D
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