BC847BSL-AL6-R [UTC]
NPN GENERAL PURPOSE AMPLIFIER;
| 型号： | BC847BSL-AL6-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN GENERAL PURPOSE AMPLIFIER 放大器 |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BC847BS
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
The UTC BC847BS is a dual NPN transistors; it uses UTC’s
advanced technology to provide customers high DC current gain, low
power dissipation and low collector-emitter saturation voltage.
The UTC BC847BS is suitable for a high gain, low noise and
general purpose amplifier.
FEATURES
* Low saturation voltage
* High DC current gain
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-363
Packing
Lead Free
Halogen Free
1
2
3
4
5
6
BC847BSL-AL6-R
BC847BSG-AL6-R
E1 B1 C2 E2 B2 C1 Tape Reel
BC847BSL-AL6-R
(1) R: Tape Reel
(1)Packing Type
(2)Package Type
(2) AL6: SOT-363
(3) G: Halogen Free, L: Lead Free
(3)Halogen Free
MARKING
6
5
8BB
2
4
L: Lead Free
G: Halogen Free
1
3
www.unisonic.com.tw
1 of 3
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R218-023.a
UNISONIC TECHNOLOGIES CO., LTD
BC847BS
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
RATINGS
50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
45
V
6.0
V
100
mA
mW
mW/°C
°C
325
PD
Derate above 25°C
2.8
Junction Temperature
Storage Temperature Range
TJ
-55~+150
-55~+150
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA ( TA=25°C unless otherwise noted)
PARAMETER
Junction to Ambient
SYMBOL
RATINGS
357
UNIT
°C/W
θJA
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
BVCES IC=10µA, IE=0
BVCEO IC=10mA, IB=0
BVEBO IE=10µA, IC=0
50
45
V
V
6.0
V
VCB=30V
ICBO
15
nA
Collector Cut-Off Current
VCB=30V, TA=150°C
5.0 μA
IC=10mA, IB=0.5mA
0.25
0.6
V
V
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VCE(sat)
VBE(on)
IC=100mA, IB=5.0mA
IC=2.0mA, VCE=5.0V
0.58
0.70
0.77
450
IC=10mA, VCE=5.0V
DC Current Gain
hFE
fT
IC=2.0mA, VCE=5.0V
200
100
Transition Frequency
Output Capacitance
IC=10mA, VCE=5.0V, f=100MHz
VCB=10V, f=1.0MHz
MHz
Cobo
4.5 pF
IC=0.2mA, VCE=5.0V, RS=2.0kΩ,
f=1.0kHz, BW=200Hz
Noise Figure
NF
10
dB
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
Ver.a
www.unisonic.com.tw
BC847BS
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R218-023.a
www.unisonic.com.tw
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