BD140L-6-T60-K [UTC]
PNP SILICON TRANSISTOR; PNP硅晶体管型号: | BD140L-6-T60-K |
厂家: | Unisonic Technologies |
描述: | PNP SILICON TRANSISTOR |
文件: | 总3页 (文件大小:132K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
1
The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP
transistor, designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
TO-251
The complementary NPN types are the BD135/BD137/ BD139.
1
TO-126
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
E
E
E
B
B
B
2
C
C
C
C
C
C
3
B
B
B
E
E
E
Lead Free
Halogen Free
BD136L-x-T60-K
BD138L-x-T60-K
BD140L-x-T60-K
BD136L-x-TM3-T
BD138L-x-TM3-T
BD140L-x-TM3-T
BD136G-x-T60-K
BD138G-x-T60-K
BD140G-x-T60-K
BD136G-x-TM3-T
BD138G-x-TM3-T
BD140G-x-TM3-T
TO-126
TO-126
TO-126
TO-251
TO-251
TO-251
Bulk
Bulk
Bulk
Tube
Tube
Tube
Note: Pin Assignment: E: Emitter C: Collector B: Base
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Copyright © 2011 Unisonic Technologies Co., LTD
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BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
BD136
SYMBOL
VCBO
RATINGS
-45
UNIT
V
Collector-Base Voltage
BD138
BD140
BD136
BD138
BD140
-60
-80
-45
Collector-Emitter Voltage
VCEO
-60
V
-80
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
VEBO
IC
ICM
IB
-5
V
V
A
A
-1.5
-3
-0.5
12.5
15
TO-126
TO-251
Power Dissipation TC≦25℃
PD
W
Junction Temperature
Storage Temperature
TJ
150
℃
℃
TSTG
-40 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-126
TO-251
TO-126
TO-251
100
83
℃/W
Junction to Ambient
Junction to Case
θJA
10
℃/W
θJC
8.3
ELECTRICAL CHARACTERISTICS (TC=25℃,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
-45
BD136
BD138
BD140
Collector-Emitter
Sustaining Voltage
VCEO(SUS) IC =-30mA, IB=0 (Note)
-60
-80
V
VCB =-30 V, IE=0
ICBO
-0.1
-10
-10
Collector Cut-off Current
Emitter Cut- off Current
μA
μA
VCB =-30 V, IE=0, TC = 125°C
IEBO
hFE1
hFE2
hFE3
VEB = -5 V, IC=0
VCE=-2V, IC =-5mA,
VCE=-2V, IC =-0.5A
VCE=-2V, IC =-150mA
25
25
40
DC Current Gain
250
-0.5
-1
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) IC =-0.5A, IB = -0.05A (Note)
VBE IC =-0.5A, VCE =-2 V (Note)
V
V
Note: Pulsed: Pulse duration ≦ 300μs, duty cycle 1.5 %
CLASSIFICATION OF hFE3
RANK
6
10
16
100~250
RANGE
40~100
63~160
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-013.Ca
www.unisonic.com.tw
BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-013.Ca
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相关型号:
BD140LEADFREE
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
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