MMBF170 [UTC]
0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 0.5A ， 60V N沟道增强型场效应晶体管
| 型号： | MMBF170 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总2页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBF170
Preliminary
Power MOSFET
0.5A, 60V N-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
DESCRIPTION
The UTC MMBF170 is an N-channel enhancement MOSFET
using UTC’s advanced technology to provide the customers with
perfect RDS(ON), low input capacitance, low gate threshold voltage
and high switching speed.
FEATURES
* RDS(ON)<5mΩ @ VGS=10V,ID=0.2A
* High Switching Speed
* Low Input Capacitance(typical 22pF)
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free
Halogen Free
MMBF170G-AE2-R
1
2
3
MMBF170L-AE2-R
S
G
D
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
1 of 2
Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-629.a
MMBF170
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
60
UNIT
V
Drain-Source Voltage
Continuous
Pulsed
±20
V
Gate-Source Voltage
VGSS
±40
V
Drain-Gate Voltage RGS ≤1.0Mꢀ
VDGR
ID
60
V
Continuous
Pulsed
500
mA
mA
mW
mW/°C
°C
Drain Current (Note 2)
IDM
800
Power Dissipation (Note 2)
225
PD
Derating above TA=25°C (Note 2)
Junction Temperature
1.80
150
TJ
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Valid provided that terminals are kept at specified ambient temperature.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
556
UNIT
°C/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=100µA, VGS=0V
60
70
V
1.0 µA
+10 nA
-10 nA
VDS=60V, VGS=0V
VDS=0V, VGS=+15V
Forward
Reverse
Gate- Source Leakage Current
IGSS
VDS=0V, VGS=-15V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=-250µA
VGS=10V, ID=200mA
0.8 2.1 3.0
V
ꢀ
5.0
Static Drain-Source On-State Resistance
VGS=4.5V, ID=50mA
5.3
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
VDS=10V, ID=0.2A
80
mS
CISS
COSS
CRSS
22
11
40
30
pF
pF
VGS=0V, VDS=10V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
2.0 5.0 pF
tD(ON)
VDD=25V, ID=0.5A, VGS=10V,
10
10
ns
ns
RGEN=50ꢀ
Turn-OFF Delay Time
tD(OFF)
Notes: 1. Pulse width ≤300µs, duty cycle ≤2%.
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R502-629.a
www.unisonic.com.tw
相关型号：
MMBF170-13-F
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
DIODES
MMBF170-7
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明