首页 |元器件品牌

SSM3K333R_15 [UTC]

N-CHANNEL POWER MOSFET;
SSM3K333R_15
型号： SSM3K333R_15
厂家： Unisonic Technologies    Unisonic Technologies
描述：

N-CHANNEL POWER MOSFET
文件： 总3页 (文件大小：162K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UNISONIC TECHNOLOGIES CO., LTD  
SSM3K333R  
Preliminary  
Power MOSFET  
6A, 30V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC SSM3K333R is an N-channel power MOSFET using  
UTC’s advanced technology to provide customers with a minimum  
on-state resistance and superior switching performance.  
The UTC SSM3K333R is usually used in power management  
switching applications.  
„
FEATURES  
* RDS(ON)<42mΩ @ VGS=4.5V  
DS(ON)<28mΩ @ VGS=10V  
R
* High switching speed  
* Low gate charge (Typ.=3.4nC)  
* Low CRSS (Typ.=28pF)  
„
SYMBOL  
3. Drain  
2.Gate  
1.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-23  
Packing  
Lead Free  
Halogen Free  
SSM3K333RG-AE3-R  
S: Source  
1
2
3
S
G
D
SSM3K333RL-AE3-R  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain  
„
MARKING  
www.unisonic.com.tw  
1 of 3  
Copyright © 2012 Unisonic Technologies Co., Ltd  
QW-R502-736.a  
SSM3K333R  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDSS  
VGSS  
30  
±20  
V
Continuous  
Pulsed  
ID (Note 2)  
IDM (Note 2)  
6
A
Drain Current  
12  
A
1
2
W
W
°C  
°C  
Power Dissipation  
PD (Note 3)  
t=10s  
Channel Temperature  
Storage Temperature  
TCH  
150  
TSTG  
-55~+150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. The channel temperature should not exceed 150°C during use.  
3. Mounted on a FR4 board.(25.4mm×25.4mm×1.6mm, Cu Pad: 645mm2)  
„
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
ID=10mA, VGS=0V  
VDS=30V, VGS=0V  
GS=+20V, VDS=0V  
30  
V
1
µA  
Forward  
Reverse  
V
+100 nA  
-100 nA  
Gate-Source Leakage Current  
IGSS  
VGS=-20V, VDS=0V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS= VGS, ID=0.1mA  
1.3  
2.5  
V
VGS=4.5V, ID=3A (Note 2)  
25.7 42 mꢀ  
18.7 28 mꢀ  
Static Drain-Source On-State Resistance  
VGS=10V, ID=5A (Note 2)  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
436  
77  
pF  
pF  
pF  
Output Capacitance  
V
GS=0V, VDS=15V, f=1.0MHz  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
28  
QG  
QGS  
3.4  
1.8  
1.0  
12  
9
nC  
nC  
nC  
ns  
Gate to Source Charge  
Gate to Drain Charge  
Turn-ON Delay Time  
VGS=4.5V, VDD=15V, ID=6A  
QGD  
tD(ON)  
tD(OFF)  
VDD=15V, ID=3A, VGS=0~4.5V,  
RG=10ꢀ  
Turn-OFF Delay Time  
ns  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage VSD ISD=6A, VGS=0V  
0.85 1.2  
V
Notes: 1. The channel temperature should not exceed 150°C during use.  
2. Pulse test  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
VER.a  
www.unisonic.com.tw  
SSM3K333R  
Preliminary  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R502-736.a  
www.unisonic.com.tw  

相关型号：

SSM3K335R

 Power Management Switches DC-DC Converters
TOSHIBA

SSM3K336R

 Power Management Switches DC-DC Converters
TOSHIBA

SSM3K35MFV

 High-Speed Switching Applications Analog Switch Applications
TOSHIBA

SSM3K35MFV(TL3T)

 Small Signal Field-Effect Transistor
TOSHIBA

SSM3K35MFV(TPL3)

 MOSFET N-CH SGL 20V 0.18A VESM
TOSHIBA

SSM3K35MFV,L3F(B

 TRANSISTOR 180 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-1L1B, VESM, 3 PIN, FET General Purpose Small Signal
TOSHIBA

SSM3K36TU

 TRANSISTOR 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, UFM, 2-2U1A, 3 PIN, FET General Purpose Small Signal
TOSHIBA

SSM3K37CT

 TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CST3, 2-1J1B, 3 PIN, FET General Purpose Small Signal
TOSHIBA

SSM3K37FS

 TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSM, 2-2H1B, 3 PIN, FET General Purpose Small Signal
TOSHIBA

SSM3K37MFV

 Field-Effect Transistor Silicon N-Channel MOS Type
TOSHIBA

SSM3K37MFV,L3XGF(T

 250mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA

SSM3K48FU

 Load Switching Applications
TOSHIBA
©2020 ICPDF网 联系我们和版权申明