UD4P20 [UTC]
4A, 20V DUAL P-CHANNEL POWER MOSFET; 4A ， 20V双P沟道功率MOSFET
| 型号： | UD4P20 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 4A, 20V DUAL P-CHANNEL POWER MOSFET |
| 文件： | 总4页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UD4P20
Preliminary
Power MOSFET
4A, 20V DUAL P-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UD4P20 uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is manufacturing reproducible. The UTC
UD4P20 is suitable for applications, such as battery management
in nomadic equipment and power management in cellular phone.
FEATURES
* RDS(ON) : 0.07Ω (TYP.)
* Low on-resistance
* Rugged avalanche characteristic
* Easy automated surface mount assembly with standard outline
* Low threshold drive
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Packing
Lead Free
Halogen Free
UD4P20L-S08-R
UD4P20L-S08-T
UD4P20G-S08-R
UD4P20G-S08-T
SOP-8
SOP-8
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-345.c
UD4P20
Preliminary
Power MOSFET
PIN CONFIGURATION
Drain 1
Drain 1
1
Source 1
Gate 1
8
7
2
Source 2
Drain 2
Drain 2
3
4
6
5
Gate 2
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UD4P20
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified.)
PARAMETER
SYMBOL
VDSS
RATINGS
-20
UNIT
Drain-Source Voltage (VGS =0V)
Drain-Gate Voltage (RGS = 20kΩ)
Gate-Source Voltage
V
V
V
VDGR
-20
VGSS
±16
Continuous Drain Current
(TC =25°C, Single Operation)
Pulsed Drain Current (Note 2)
ID
-4
A
IDM
PD
-16
1.6
A
Dual Operation
W
W
°C
°C
Power Dissipation (TC=25°C)
Single Operation
2
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
Single Operation
Dual Operation
Junction to Ambient
θJA
78
Note: When Mounted on 0.5 in2 pad of 2oz. copper
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
BVDSS
IDSS
ID = -250μA, VGS = 0 V
VDS =-20 V, VGS =0 V
VGS = ±16 V, VDS=0 V
-20
V
-1
µA
IGSS
±100 nA
VGS(TH)
RDS(ON)
VDS = VGS, ID = -250μA
VGS =-10 V, ID =-2A
VGS =-4.5 V, ID =-2A
-1
-1.6 -2.5
V
70
85
80
mΩ
Static Drain-Source On-State Resistance
100 mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1350
490
pF
pF
pF
VDS =-25 V, VGS =0 V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
130
tD(ON)
tR
tD(OFF)
tF
25
35
125
35
12.5
5
ns
ns
ns
ns
VDD=-15V, ID=-2A ,
VGS=-4.5 V, RG=4.7 Ω
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
QG
16
nC
nC
nC
VDD =-24 V, VGS =-5 V
Gate Source Charge
Gate Drain Charge
QGS
QGD
ID =-4 A
3
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 1)
VSD
ISD =-4 A, VGS =0 V
-1.2
-4
V
A
Maximum Continuous Drain-Source Diode
Forward Current
ISD
Maximum Pulsed Drain-Source Diode
Forward Current (Note 2)
ISDM
-16
A
Reverse Recovery Time
Reverse Recovery Charge
trr
45
36
ns
ISD=-4A, VDD=-15V
dI/dt =100A/μs, TJ=150°C
QRR
nC
Notes: 1. Pulsed: Pulse duration =300μS, duty cycle≤1.5 %.
2. Pulse width limited by safe operating area.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-345.c
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UD4P20
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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