UD9926G-S08-R [UTC]
DUAL N-CHANNEL ENHANCEMENT MODE; 双N沟道增强模式型号: | UD9926G-S08-R |
厂家: | Unisonic Technologies |
描述: | DUAL N-CHANNEL ENHANCEMENT MODE |
文件: | 总5页 (文件大小:204K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UD9926
Power MOSFET
DUAL N-CHANNEL
ENHANCEMENT MODE
SOP-8
FEATURES
* 20V/6A
* Low RDS(ON)
* Reliable and Rugged
SYMBOL
TSSOP-8
Lead-free:
UD9926L
Halogen-free: UD9926G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
UD9926L-S08-R
UD9926L-P08-R
Halogen Free
1
2
3
4
5
6
7
8
UD9926-S08-R
UD9926-P08-R
UD9926G-S08-R
SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
UD9926G-P08-R TSSOP-8 D1 S1 S1 G1 G2 S2 S2 D2 Tape Reel
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Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-143.B
UD9926
Power MOSFET
PIN CONFIGURATION
For SOP-8 Package
For TSSOP-8 Package
Drain1
Drain2
1
8
7
Source2
2
Source1
Source1
Source2
Gate2
3
4
6
5
Gate1
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UD9926
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain Source Voltage
Gate Source Voltage
20
±10
V
Continuous(Note 3)
Pulsed (Note 2)
SOP-8
6
A
Drain Current
IDM
20
A
1.6
W
W
°C
°C
Power Dissipation
PD
TSSOP-8
1.0
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Surface Mounted on 1in 2 pad area, t≤10sec.
2.
3. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
80
UNIT
Junction to Ambient
θJA
°C /W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=250uA
VDS=16V, VGS=0V
VDS=0V, VGS=±8V
20
V
1
uA
IGSS
±100 nA
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250uA
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
0.5
0.7
28
38
1.5
32
45
V
mΩ
mΩ
Drain-Source On-State Resistance (Note2)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
520
110
70
pF
pF
pF
VGS=0V,VDS=15V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note)
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
17
15
45
25
10
3.6
2
ns
ns
VDD=10V, VGS=4.5V, ID=1A,
RG=0.2Ω
Turn-OFF Delay Time
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note)
Gate-Source Charge
QG
nC
nC
nC
VDS=10V, VGS=-4.5V, ID=6A
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS=1.7A, VGS=0V
0.6
1.3
2.5
V
A
IS
Note: Pulse width ≤300us, duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
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UD9926
Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
20
16
20
15
VGS=2,3,4,5,6,7,8,9,10V
1V
12
8
10
5
0.5V
TJ=25℃
4
0
TJ=125℃
TJ=55℃
0
0.0
0
4
5
1
2
3
1.5
0.5
1.0
2.0
2.5
Drain-to-Source Voltage, VDS (V)
Gate-to-Source Voltage, VGS (V)
On-Resistance vs. Drain Current
On-Resistance vs. Gate-to-Source Voltage
0.12
0.11
0.10
0.040
0.035
ID=6A
0.09
VGS=4.5V
VGS=10V
0.08
0.07
0.030
0.025
0.06
0.05
0.04
0.020
0.03
0.02
0.015
0.010
0.01
0.00
10
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
Gate-to-Source Voltage, VGS (V)
Drain Current, ID (A)
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UD9926
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
20
10
80
60
40
TJ=150℃
TJ=25℃
20
0
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.01
0.1
1
10
Source-to-Drain Voltage, VSD (V)
Time (sec)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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