UT100N03L-Q-K08-5060-R [UTC]
Power Field-Effect Transistor,;
| 型号： | UT100N03L-Q-K08-5060-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT100N03-Q
Power MOSFET
100A, 30V N-CHANNEL
POWER MOSFET
1
TO-220
DESCRIPTION
The UT100N03-Q uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
1
FEATURES
TO-263
* RDS(ON) ≤ 5.3mΩ @ VGS=10V, ID=50A
* RDS(ON) ≤ 8.0mΩ @ VGS=4.5V, ID=40A
1
SYMBOL
Drain
DFN5060-8
Gate
Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
4
-
5
-
6
-
7
-
8
-
UT100N03L-TA3-T
UT100N03L-TQ2-T
UT100N03L-TQ2-R
UT100N03G-TA3-T
UT100N03G-TQ2-T
UT100N03G-TQ2-R
TO-220
TO-263
TO-263
G D
G D
G D
Tube
Tube
-
-
-
-
-
-
-
-
-
-
Tape Reel
UT100N03L-K08-5060-R UT100N03G-K08-5060-R DFN5060-8 S
S S G D D D D Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
UT100N03G-TA3-T
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(2) TA3: TO-220, TQ2: TO-263, K08-5060: DFN5060-8
(3) G: Halogen Free and Lead Free, L: Lead Free
(3)Green Package
MARKING
TO-220 / TO-263
DFN5060-8
UTC
UT100N03
UTC
UT
L: Lead Free
G: Halogen Free
100N03
Lot Code
Date Code
Lot Code
Date Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
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UT100N03-Q
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current
100
A
Pulsed Drain Current (Note 2)
Single Pulsed Avalanche Current (Note 3)
Single Pulsed Avalanche Energy (Note 3)
IDM
400
A
IAS
35
A
EAS
875
mJ
W
TO-220/TO-263
100
Power Dissipation
Derate above 25°C
DFN5060-8
21
W
PD
TO-220/TO-263
DFN5060-8
0.67
0.168
+175
-55 ~ +175
W/°C
W/°C
°C
°C
Junction Temperature
Strong Temperature
TJ
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
TO-220/TO-263
DFN5060-8
Junction to Ambient
Junction to Case
θJA
40.3 (Note 1, 2)
1.5
TO-220/TO-263
DFN5060-8
θJC
6 (Note 1, 2)
Notes: 1. Maximum under Steady State conditions is 90 °C/W.
2. Surface Mounted on 1" x 1" FR4 board.
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UT100N03-Q
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note2)
Gate Threshold Voltage
BVDSS
IDSS
VGS =0 V, ID =250 µA
30
V
VDS=30 V,VGS =0 V
1
µA
IGSS
VDS =0 V, VGS = ±20 V
±100 nA
VGS(TH)
RDS(ON)
VDS =VGS, ID =250 µA
VGS =10 V, ID =50 A
VGS =4.5 V, ID =40 A
1
3
5.3
8
V
Static Drain-Source On-Resistance
mΩ
DYNAMIC PARAMETERS(Note3)
Input Capacitance
CISS
COSS
CRSS
3800
700
Output Capacitance
VDS =15V, VGS =0V, f=1.0MHz
VDS =15V, VGS =5V, ID =16A
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS(Note3)
Total Gate Charge
500
QG
QGS
QGD
tD(ON)
tR
400
80
Gate Source Charge
nC
ns
Gate Drain Charge
100
180
400
480
400
Turn-ON Delay Time
Turn-ON Rise Time
VDD=15V, ID =1A, RGEN =6Ω
VGS =10 V
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
IS
90
A
V
VSD
IS=20 A,VGS=0 V
1.5
Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%
2. Guaranteed by design, not subject to production testing
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UT100N03-Q
Power MOSFET
TEST CIRCUIT AND WAVEFORM
Switching Time Test Circuit
Switching Waveforms
ton
tr
VIN
VDS
toff
tf
td(on)
td(off)
RL
VOUT
90％
90％
10％
D
10％
VOUT
INVERTED
RGE
G
S
90％
VGS
50％
50％
10％
VIN
Pulse Width
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UT100N03-Q
Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
50
40
30
100
VGS=10,8,6,4V
80
60
40
20
0
VGS=3V
20
10
0
25℃
TJ=125℃
-55℃
0
1
2
4
0
1
2
3
4
5
3
Drain to Source Voltage,VDS (V)
Gate to Source Voltage,VGS (V)
On-Resistance Variation with Temperature
Gate Threshold Variation with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
2.2
1.9
1.6
1.3
1.0
0.7
0.4
VDS=VGS
ID=250μA
ID=50A
VGS=10V
-50
150
25 50 75 100 125
-100 -50
0
50
100 150
200
-25
0
Junction Temperature,TJ (℃)
Junction Temperature,TJ (℃)
Gate-Charge Characteristics
Capacitance Characteristics
12000
10000
8000
6000
4000
2000
0
10
VDS=15V
ID=16A
CISS
8
6
4
2
0
CRSS
COSS
0
20
40
60
80
100
0
5
10
15
20
25
Total Gate Charge,QG (nC)
Drain to Source Voltage,VDS (V)
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UT100N03-Q
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Maximum Safe Operating Area
Body-Diode Characteristics
VGS=0V
103
102
RDS(ON)
Limited
102
100μs
1ms
10ms
101
DC
101
TC=25℃
TJ=150℃
Single Pulse
100
100
10-1
100
Drain to Source Voltage,VDS (V)
101
102
0.4
0.6
0.8
1.0
1.2
1.4
Body Diode Forward Voltage,VSD (V)
Normalized Thermal Transient Impedanc Curve
100
10-1
10-2
D=0.5
0.2
0.1
PDM
t1
0.05
0.02
t2
1.RθJC(t)=r(t)*RθJC
0.01
2.RθJC=See Datasheet
3.TJM-TC=P*RθJC(t)
4.Duty Cycle,D=t1/t2
Single Pulse
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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